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A flexible, nondestructive, and cost-effective replication technique for nanostructures is presented. The advantages of the process are: 1) it allows for tailoring structural parameters of the replica (e.g., line width) nearly independent of the structural geometry of the master; 2) it allows for replication of high-aspect-ratio structures also in polymer materials from solution (especially noncurable polymers) such as polystyrene and polymethylmethacrylate; 3) it includes an easy separation process, thus preserving the master for repeated use. Linear grating replicas with line widths ranging from 88 to 300 nm are obtained using a single nanostructured master. Nanofibers and complex nanopatterned replicas are achievable. The presented technique and its flexibility show that atomic layer deposition is a unique tool for the preparation of high-efficiency polarizer diffractive optics, photonics, electronics, and catalysts.

We performed systematic adsorption studies using self-ordered nanoporous anodic aluminum oxide (AAO) in an extended range of mean pore diameters and with different pore topologies. These matrices were characterized by straight cylindrical pores having a narrow pore size distribution and no interconnections. Pronounced hysteresis loops between adsorption and desorption cycles were observed even in the case of pores closed at one end. These results are in contrast with macroscopic theoretical models and detailed numerical simulations of the adsorption in a single pore. Extensive measurements involving adsorption isotherms, reversal curves, and subloops carried out in closed-bottom pores suggest that the pores do not desorb independently from one another.

A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm2, the current density through a single dislocation is J = 3.8 × 1012 A/cm2 corresponding to a resistivity of ρ ≅ 1 × 10−8 Ω cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.