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Your search keyword '"G. Vaschenko"' showing total 2 results
Start Over Author "G. Vaschenko" Topic chemistry
2 results on '"G. Vaschenko"'

1. Industrialization of a Laser Produced Plasma EUV Light Source for Lithography

Author

I. Fomenkov, A. Schafgans, S. Rokitski, M. Kats, J. Stewart, A. LaForge, A. Ershov, M. Purvis, Y. Tao, M. Vargas, J. Grava, P. Das, L. Urbanski, R. Rafac, J. Lukens, C. Rajyaguru, G. Vaschenko, M. Abraham, D. Brandt, and D. Brown

Subjects
Materials science, business.industry, Extreme ultraviolet lithography, 010401 analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, 0104 chemical sciences, law.invention, Optics, Semiconductor, Light source, chemistry, law, Extreme ultraviolet, Optoelectronics, 0210 nano-technology, business, Tin, Lithography
Abstract

ASML is committed to develop high power EUV source technology for use in EUV lithography for high-volume-manufacturing (HVM) of semiconductors. A stable dose controlled Laser-Produced-Plasma (LPP) EUV source has been successfully developed and introduced using a CO2 laser and small tin (Sn) droplets.

Published
2017
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2. Carrier capture in 1.3 /spl mu/m InAsP-InGaAsP quantum well laser structures

Author

R. Slaby, G. Vaschenko, C.S. Menoni, G.Y. Robinson, J.M. Pikal, and C.M. Sotomayor Torres

Subjects
Work (thermodynamics), Electron mobility, Materials science, business.industry, Carrier lifetime, Laser, law.invention, Gallium arsenide, chemistry.chemical_compound, chemistry, law, Optoelectronics, Quantum well laser, Transient response, business, Excitation
Abstract

Summary form only given. Carrier transport, capture and escape processes in multiple quantum well (MQW) lasers have been shown to affect the high speed and static characteristics of the device. Recently, we have demonstrated that these processes also significantly affect the bias-dependent carrier lifetime, and consequently the recombination parameters that are extracted from this lifetime. In this work we investigate carrier transport processes in InAsP-InGaAsP MQW lasers from the transient response of the photoexcited emission created under conditions of high excitation.

Published
2000
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