1. Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides
- Author
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Cun-Zheng Ning, Chee Wei Wong, Kai Fu, Yuji Zhao, Abhinav Kumar Vinod, Hong Chen, Dongyu Chen, Xuanqi Huang, Chen Yang, Tsung-Han Yang, Andrea M. Armani, Jossue Montes, Houqiang Fu, Jingan Zhou, and Dongying Li
- Subjects
Materials science ,Astrophysics::High Energy Astrophysical Phenomena ,Physics::Optics ,chemistry.chemical_element ,Astrophysics::Cosmology and Extragalactic Astrophysics ,02 engineering and technology ,Nitride ,medicine.disease_cause ,01 natural sciences ,010309 optics ,symbols.namesake ,Aluminium ,0103 physical sciences ,Broadband ,medicine ,Electrical and Electronic Engineering ,Nonlinear Schrödinger equation ,business.industry ,Second-harmonic generation ,Nonlinear optics ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Supercontinuum ,chemistry ,symbols ,Optoelectronics ,0210 nano-technology ,business ,Ultraviolet ,Biotechnology - Abstract
Optical sources emitting in the ultraviolet (UV) to near-infrared wavelength range are an enabling tools for a wide variety of applications. To achieve broadband coherent generation within visible and UV spectrum, one fundamental obstacle is the strong material dispersion which limits efficient frequency conversion. Previous works have addressed this challenge by either using high input energies or delicate resonant structures. In this work, a simple device system is proposed to tackle the problem. Single crystalline aluminum nitride material with a threading dislocation density less than 109 cm–2 was used to provide broadband transparency, and a high order waveguide mode (transverse electric, TE10) was used to create anomalous dispersion near 800 nm, in which soliton fission processes are supported. As a result, supercontinuum generation from 490 nm to over 1100 nm with a second harmonic generated band covering from 407 to 425 nm is achieved with the total on-chip pulse energy of 0.6 nJ.
- Published
- 2021
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