1. Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance
- Author
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Francesca Peverini, Saba Aziz, Aishah Bashiri, Marco Bizzarri, Maurizio Boscardin, Lucio Calcagnile, Carlo Calcatelli, Daniela Calvo, Silvia Caponi, Mirco Caprai, Domenico Caputo, Anna Paola Caricato, Roberto Catalano, Roberto Cirro, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Tommaso Croci, Giacomo Cuttone, Gianpiero de Cesare, Paolo De Remigis, Sylvain Dunand, Michele Fabi, Luca Frontini, Livio Fanò, Benedetta Gianfelici, Catia Grimani, Omar Hammad, Maria Ionica, Keida Kanxheri, Matthew Large, Francesca Lenta, Valentino Liberali, Nicola Lovecchio, Maurizio Martino, Giuseppe Maruccio, Giovanni Mazza, Mauro Menichelli, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Augusto Nascetti, Stefania Pallotta, Andrea Papi, Daniele Passeri, Marco Petasecca, Giada Petringa, Igor Pis, Pisana Placidi, Gianluca Quarta, Silvia Rizzato, Alessandro Rossi, Giulia Rossi, Federico Sabbatini, Andrea Scorzoni, Leonello Servoli, Alberto Stabile, Silvia Tacchi, Cinzia Talamonti, Jonathan Thomet, Luca Tosti, Giovanni Verzellesi, Mattia Villani, Richard James Wheadon, Nicolas Wyrsch, Nicola Zema, and Maddalena Pedio
- Subjects
amorphous hydrogenated silicon ,photoemission ,inverse photoemission ,flexible substrate ,radiation detector ,Raman ,Chemistry ,QD1-999 - Abstract
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses.
- Published
- 2024
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