1. Direct Observation of Band Gap Renormalization in Layered Indium Selenide
- Author
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Abhay Shukla, Luca Perfetti, Hemian Yi, Dianyuan Fan, José Avila, Zailan Zhang, Meryem Bouaziz, Zhesheng Chen, Christine Giorgetti, Ying Li, Azzedine Bendounan, Bingbing Tian, Laboratoire des Solides Irradiés (LSI), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Band gap ,General Physics and Astronomy ,chemistry.chemical_element ,Angle-resolved photoemission spectroscopy ,02 engineering and technology ,Electronic structure ,010402 general chemistry ,7. Clean energy ,01 natural sciences ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Selenide ,General Materials Science ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ComputingMilieux_MISCELLANEOUS ,business.industry ,Doping ,General Engineering ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Semiconductor ,chemistry ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,Optoelectronics ,Direct and indirect band gaps ,0210 nano-technology ,business ,Indium - Abstract
Manipulation of intrinsic electronic structures by electron or hole doping in a controlled manner in van der Waals layered materials is the key to control their electrical and optical properties. Two-dimensional indium selenide (InSe) semiconductor has attracted attention due to its direct band gap and ultrahigh mobility as a promising material for optoelectronic devices. In this work, we manipulate the electronic structure of InSe by in situ surface electron doping and obtain a significant band gap renormalization of ∼120 meV directly observed by high-resolution angle resolved photoemission spectroscopy. This moderate doping level (carrier concentration of 8.1 × 1012 cm-2) can be achieved by electrical gating in field effect transistors, demonstrating the potential to design of broad spectral response devices.
- Published
- 2019
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