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Doping is a common strategy in the field of semiconductor technology but its employment in organic photodetectors (OPDs) has been limited due to the typical uncontrollable increase of the dark currents. This study introduces three different molecular dopants, including p-type tris(pentafluorophenyl)borane, n-type benzyl viologen, and (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)-phenyl)dimethylamine, for near-infrared poly[[2,5-bis(2-hexyldecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl]-alt-[3′,3′′-dimethyl-2,2′:5′,2′′-terthiophene]-5,5′′-diyl]:[6,6]-phenyl C61 butyric acid methyl ester (PMDPP3T:PC61BM) bulk-heterojunction OPDs. The results show that OPDs with optimal 0.02 wt% dopants exhibit low dark current (3.18 × 10−8 A cm−2), high detectivity (5.56 × 1012 Jones), and good environmental stability for ∼2 months. These doped OPDs are further used for pulse wave monitoring, which exhibit stable waveforms and can distinguish slow and fast heartbeat rates.

Atom-economic protocols for the synthesis of poly(indacenodithiophene-alt-benzothiadiazole) (PIDTBT) are presented in which all C–C coupling steps are achieved by direct arylation. Using two different synthetic pathways, PIDTBT copolymers with different side chains (hexylphenyl, octylphenyl, dodecyl, methyl/2-octyldodecylphenyl, 2-octyldodecylphenyl/2-octyldodecylphenyl) and molecular weight (MW) are prepared. Route A makes use of direct arylation polycondensation (DAP) of indacenodithiophene (IDT) and 4,7-dibromo-2,1,3-benzothiadiazole (BTBr2) leading to PIDTBT in high yields, with adjustable MW and without indications for structural defects. Route B starts from a polyketone precursor also prepared by DAP following cyclization. While route B allows introduction of asymmetric side chains at the IDT unit, polymer analogous cyclization gives rise to defect formation. The absorption coefficient of PIDTBT with alkylphenyl side chains made by route A increases with MW. Field-effect hole mobilities around ∼10−2 cm2 V−1 s−1 are molecular weight-independent, which is ascribed to a largely amorphous thin film morphology. PIDTBT with linear dodecyl side (C12) chains exhibits a bathochromic shift (20 nm), in agreement with theory, and more pronounced vibronic contributions to absorption spectra. In comparison to alkylphenyl side chains, C12 side chains allow for increased order in thin films, a weak melting endotherm and lower energetic disorder, which altogether explain substantially higher field-effect hole mobilities of ∼ 10−1 cm2 V−1 s−1.

Molecular doping has recently been shown to improve the operating characteristics of organic photovoltaics (OPVs). Here, we prepare neutral Diquat (DQ) and use it as n-dopant to improve the perform...

Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push–pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW-1 at 1200 nm and −2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW-1. Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor–acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.

The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography, with a high mobility organic semiconductor and demonstrate RF Schottky diodes able to operate in the 5G frequency spectrum. We used C16 IDT-BT, as the high hole mobility polymer, and studied the impact of p-doping on the diode performance. Pristine C16 IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (fC ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed primarily to the planar nature of the nanogap channel and the diode's small junction capacitance (< 2 pF). Doping of C16 IDT-BT with the molecular p-dopant C60 F48 , improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic fC of >100 and ∼14 GHz respectively, while the DC output voltage of a RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area radio frequency electronics of the future. This article is protected by copyright. All rights reserved.

This article is part of the Organic Bioelectronics special issue., Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping–processing–nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices., This work was from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award nos. OSR-2018-CARF/CCF-3079 and OSR-2019- CRG8-4095.3. F.A. acknowledges the support from The Wilkinson Charitable Foundation. C.M. acknowledges financial support from the Swedish Research Council (grant no. 2018- 03824) and the Knut and Alice Wallenberg Foundation through a Wallenberg Academy Fellowship Prolongation grant.

Blade-coating is a roll-to-roll (R2R) compatible processing technique and has the potential to address the industry's needs for scalable manufacturing of future organic electronics. Here we investigate the applicability of blade-coating for the fabrication of organic thin-film transistors (OTFTs) based on best-in-class organic semiconducting blends comprised of the conjugated small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), and the conjugated polymer poly(indacenodithiophene-co-benzothiadiazole) (C16IDT-BT). We show that the operating characteristics of blade-coated transistors consistently outperform devices prepared via spin-coating, showcasing the compatibility of the technique. Introducing the molecular p-dopant C60F48 into the binary C8-BTBT:C16IDT-BT blend formulation, in combination with carefully optimized blade-coating conditions, helps to enhance the performance of the ensuing transistors further resulting in a maximum hole mobility of ≈14 cm2 V−1 s−1, and an all-around improvement of the device operating characteristics. Our results show that p-doped blend OTFTs can be manufactured using industry relevant processing techniques without sacrificing their state-of-the-art performance.

Here we have investigated the influence of the molecular length and structure of a series of BTI-based semiconductors on the stabilization of charged states in solution by in situ UV/Vis/NIR spectroelectrochemistry and in the solid state, at the active interface of operational OFET devices, by charge modulation spectroscopy (CMS). Interestingly, we found that charge stabilization in the shortest system of the series (BTI2) is strongly favored via a π-dimer formation which, in addition to higher thin film microstructural ordering, results in a greater electron mobility in organic field effect transistors (OFETs). The experimental results were interpreted using TD-DFT and DFT quantum chemical calculations at different levels of theory.

Organic electronics has been steadily evolving, with improving performances, including unrivaled mechanical properties. One of the main technological trends aims at thinner and lighter form factors, toward the realization of ultraflexible and conformable large-area electronic devices, capable of withstanding harsh mechanical stresses and therefore finding applications where rigid or brittle technologies would fail. Pursuing this objective, a critical role is known to be played by the substrate, whose thickness needs to be reduced as much as possible while maintaining its processability. Ultrathin substrates and a neutral plane strategy have therefore been exploited to realize ultrathin organic devices; however, ultraflexible complementary circuits based on printed organic semiconductors, realized by means of high-throughput and large-area techniques, have not been realized so far. In this work, all-polymer organic field effect transistors and complementary inverters have been printed onto a micrometer-thin parylene substrate, subsequently also used as a top isolation layer in order to place the active components in the neutral plane of stresses. These devices show appropriate low voltage operation, with supply voltages as low as 2 V, and retain stable and uniform performances upon the application of harsh mechanical stresses, such as rolling and crumpling. These results represent the first demonstration of semi-transparent and fully organic crumpable printed electronics, and pave the way toward the realization of more complex complementary logic circuits, laying the foundation for their widespread and cost-effective integration into consumer products.

Structural defects in semiconducting conjugated polymers are usually suspected to deteriorate their properties and device performance and therefore complicate batch-to-batch reproducibility. This s...

Substrate engineering for steering cell growth is a wide and well-established area of research in the field of modern biotechnology. Here we introduce a micromachining technique to pattern an inert, transparent polymer matrix blended with a photoactive polymer. We demonstrate that the obtained scaffold combines the capability to align with that to photostimulate living cells. This technology can open up new and promising applications, especially where cell alignment is required to trigger specific biological functions, e.g. generate powerful and efficient muscle contractions following an external stimulus., Comment: 30 pages, 7 images in main text, 5 images in supporting

Organic mixed conductors find use in batteries, bioelectronics technologies, neuromorphic computing, and sensing. While great progress has been achieved, polymer-based mixed conductors frequently experience significant volumetric changes during ion uptake/rejection, i.e., during doping/de-doping and charging/discharging. Although ion dynamics may be enhanced in expanded networks, these volumetric changes can have undesirable consequences, e.g., negatively affecting hole/electron conduction and severely shortening device lifetime. Here, the authors present a new material poly[3-(6-hydroxy)hexylthiophene] (P3HHT) that is able to transport ions and electrons/holes, as tested in electrochemical absorption spectroscopy and organic electrochemical transistors, and that exhibits low swelling, attributed to the hydroxylated alkyl side-chain functionalization. P3HHT displays a thickness change upon passive swelling of only +2.5%, compared to +90% observed for the ubiquitous poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, and +10 to +15% for polymers such as poly(2-(3,3'-bis(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)-[2,2'-bithiophen]-5-yl)thieno[3,2-b]thiophene) (p[g2T-TT]). Applying a bias pulse during swelling, this discrepancy becomes even more pronounced, with the thickness of P3HHT films changing by10% while that of p(g2T-TT) structures increases by +75 to +80%. Importantly, the initial P3HHT film thickness is essentially restored after de-doping while p(g2T-TT) remains substantially swollen. The authors, thus, expand the materials-design toolbox for the creation of low-swelling soft mixed conductors with tailored properties and applications in bioelectronics and beyond.

Carbyne and linear carbon structures based on sp-hybridization are attractive targets as the ultimate one-dimensional system (i.e., one-atom in diameter) featuring wide tunability of optical and electronic properties. Two possible structures exist for sp-carbon atomic wires: (a) the polyynes with alternated single-triple bonds and (b) the cumulenes with contiguous double bonds. Theoretical studies predict semiconducting behavior for polyynes, while cumulenes are expected to be metallic. Very limited experimental work, however, has been directed toward investigating the electronic properties of these structures, mostly at the single-molecule or monolayer level. However, sp-carbon atomic wires hold great potential for solution-processed thin-film electronics, an avenue not exploited to date. Herein, we report the first field-effect transistor (FET) fabricated employing cumulenic sp-carbon atomic wires as a semiconductor material. Our proof-of-concept FET device is easily fabricated by solution drop casting and paves the way for exploiting sp-carbon atomic wires as active electronic materials.

Polymer blends are broadly important in chemical science and chemical engineering and have led to a wide range of commercial products, however their precise structure and phase morphology is often not well understood. Here we show for the first time that π-conjugated polytellurophenes and high-density polyethylene form blends that can serve as active layers in field-effect transistor devices and can be characterized by a variety of element-specific imaging techniques such as STEM and EDX. Changing the hydrocarbon content and degree of branching on the polytellurophene side-chain leads to a variety of blend structures, and these variations can be readily visualized. Characterization by electron microscopy is complemented by topographic and X-ray methods to establish a nano- to micro-scale picture of these systems. We find that blends that possess microscale networks function best as electronic devices; however, contrary to previous notions a strong correlation between nanofiber formation and electrical performance is not observed. Our work demonstrates that use of organometallic polymers assists in clarifying relevant structure–property–function relationships in multicomponent systems such as semiconductor:insulator blends and sheds light on the structure development in polymer:polymer blends including crystallization, phase separation, and formation of supramolecular arrangements.

It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid–liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid–liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid–liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015, 53, 304–310

Chemical design criteria for materials for bioelectronics applications using a series of copolymer derivatives based on poly(3-hexylthiophene) are established. Directed chemical design via side-chain functionalization with polar groups allows manipulation of ion transport and ion-to-electron transduction. Insights gained will permit increased use of the plethora of materials employed in the organic electronics area for application in the bioelectronics field.

Indacenodithiophene (IDT) based materials are emerging high performance conjugated polymers for use in efficient organic photovoltaics and transistors. However, their preparation generally suffers from long reaction sequences and is often accomplished using disadvantageous Stille couplings. Herein, we present detailed synthesis pathways to IDT homopolymers using C-H activation for all C-C coupling steps. Polyketones are first prepared by direct arylation polycondensation (DAP) in quantitative yield and further cyclized polymer analogously. This protocol is suitable for obtaining structurally well-defined IDT homopolymers, provided that the conditions for cyclization are chosen appropriately and that side reactions are suppressed. Moreover, this polymer analogous pathway gives rise to asymmetric side chain patterns, which allows to fine tune physical properties. Alternatively, IDT homopolymers can be obtained via oxidative direct arylation polycondensation of IDT monomers (oxDAP), leading to IDT homopolymers with similar properties but at reduced yield. Detailed characterization by NMR, IR, UV-vis and PL spectroscopy, and thermal properties, is used to guide synthesis and to explain varying field-effect transistor hole mobilities in the range of 10-6- 10-3 cm2/Vs.