1. Ti-A nd Fe-related charge transition levels in β-Ga 2 O 3
- Author
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Lasse Vines, Zbigniew Galazka, Walter E. Meyer, Joel B. Varley, Christian Zimmermann, Klaus Irmscher, F.D. Auret, Antti Karjalainen, Ymir Kalmann Frodason, Abraham W. Barnard, University of Oslo, University of Pretoria, Lawrence Livermore National Laboratory, Leibniz Institute for Crystal Growth, Department of Applied Physics, Aalto-yliopisto, and Aalto University
- Subjects
010302 applied physics ,Materials science ,Deep-level transient spectroscopy ,Physics and Astronomy (miscellaneous) ,chemistry.chemical_element ,Charge (physics) ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Hybrid functional ,Secondary ion mass spectrometry ,Crystallography ,chemistry ,Octahedron ,0103 physical sciences ,Atom ,Gallium ,0210 nano-technology ,Transient spectroscopy - Abstract
Deep-level transient spectroscopy measurements on β-Ga 2 O 3 crystals reveal the presence of three defect signatures labeled E 2 a, E 2 b, and E 3 with activation energies at around 0.66 eV, 0.73 eV, and 0.95 eV below the conduction band edge. Using secondary ion mass spectrometry, a correlation between the defect concentration associated with E 3 and the Ti concentration present in the samples was found. Particularly, it is found that E 3 is the dominant Ti-related defect in β-Ga 2 O 3 and is associated with a single Ti atom. This finding is further corroborated by hybrid functional calculations that predict Ti substituting on an octahedral Ga site, denoted as Ti GaII, to be a good candidate for E 3. Moreover, the deep level transient spectroscopy results show that the level previously labeled E 2 and attributed to Fe substituting on a gallium site (Fe Ga) consists of two overlapping signatures labeled E 2 a and E 2 b. We tentatively assign E 2 a and E 2 b to Fe substituting for Ga on a tetrahedral or an octahedral site, respectively.
- Published
- 2020