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The heterojunction (HJ) solar cell is one of the best possible options to upgrade the conventional single homo-junction c-Si solar cell. In this work, a single HJ solar cell based on crystalline silicon (c-Si) wafer with zinc oxide (ZnO) is designed to reduce the loss of power conversion owing to the reflection of incident photons by the top surface of silicon. A PC1D simulation is used to evaluate the optimum numerical value of key photovoltaic parameters for HJ-based c-Si solar cells. The average reflectance for ZnO/Si HJ-based c-Si is 7.65% in the wavelength range of 400-1000 nm. The highest efficiency (η = 24.8%) of the ZnO/Si HJ-based c-Si solar is obtained with a 400 μm base thickness, 20 μm emitter thickness, doping concentration of 1.1 × 1017 cm−3 in the base and a doping concentration of 5.1 x 1016 cm−3 in the emitter. The proposed ZnO/Si HJ-based c-Si solar cell with high efficiency would be one of the best possible alternative HJ device to the conventional single homo-junction c-Si solar cell.

Pure and Mg-doped manganese oxide thin films were synthesized on heated glass substrates using the spray pyrolysis technique. The surface chemical composition was investigated by the use of X-ray photoelectron spectroscopy (XPS). Structural and morphological properties were studied by using X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscopy (AFM). Optical properties were characterized by UV-visible spectroscopy. XPS spectra showed typical Mn (2p3/2), (2p1/2) and O (1s) peaks of Mn3O4 with a slight shift attributed to the formation of different chemical states of manganese. XRD analysis revealed the tetragonal phase of Mn3O4 with a preferred (211) growth orientation that improved with Mg-doping, likewise, grain size is observed to increase with the Mg doping. SEM images of Mn3O4 films showed rough surfaces composed of uniformly distributed nanograins whose size decreases with the Mg-doping. The manganese oxide films surface observed in AFM show a textured, rough and porous surface. The combination of transmittance and absorption data in the UV-visible range allowed determining the energy values of the Eg band gap (1.5–2.5 eV). The decrease of the band gap with the Mg-doping increase is attributed to the influence of the greater size of the Mg2+ ion in the manganese oxide lattice.