1. High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates
- Author
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Dagher, R., Matta, S., PARRET, Romain, PAILLET, Matthieu, JOUAULT, Benoit, Nguyen, L., Portail, M., Zielinski, M., Chassagne, T., Tanaka, S., Brault, J., Cordier, Y., Michon, A., Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Department of Applied Quantum Physics and Nuclear Engineering
- Subjects
atomic force microscopy ,growth ,graphene ,Raman spectroscopy ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,annealing ,X-ray photoemission spectroscopy ,AlN ,[PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall] ,chemical vapor deposition - Abstract
Graphene and AlN are promising materials, interesting to combine together. In this study, we will present first results for direct growth of graphene on bulk AlN and on AlN templates using chemical vapor deposition, including the annealing of these substrates at high temperatures. Atomic force microscopy (AFM) enabled us to study the evolution of the AlN surface morphology after annealing and growth. Few-layer graphene deposition is demonstrated on the basis of X-ray photoemission and Raman spectroscopy
- Published
- 2017