1. Evolution of β-Ga2O3 to γ-Ga2O3 solid-solution epitaxial films after high-temperature annealing.
- Author
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Jiang, Kunyao, Tang, Jingyu, Xu, Chengchao, Xiao, Kelly, Davis, Robert F., and Porter, Lisa M.
- Subjects
ANNEALING of metals ,CHEMICAL vapor deposition ,SOLID solutions ,TRANSMISSION electron microscopy - Abstract
Atomic resolution scanning/transmission electron microscopy (S/TEM) and energy-dispersive x-ray (EDX) analysis were used to determine the effects of annealing at 800–1000 °C in air on Ga
2 O3 films grown on (100) MgAl2 O4 at 650 °C via metal-organic chemical vapor deposition. Annealing resulted in the diffusion of Mg and Al into the films concomitantly with the transformation of β-Ga2 O3 to γ-Ga2 O3 solid solutions. The minimum atomic percent of Al + Mg that corresponded with the transformation was ∼4.6 at. %. Analyses of atomic-scale STEM images and EDX profiles revealed that the Al and Mg atoms in the γ-Ga2 O3 solid solutions occupied octahedral sites; whereas the Ga atoms occupied tetrahedral sites. These site preferences may account for the stabilization of the γ-Ga2 O3 solid solutions. [ABSTRACT FROM AUTHOR]- Published
- 2023
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