1. Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001).
- Author
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Jiang, Chen, Liu, Hao, Wang, Jun, Ren, Xiaomin, Wang, Qi, Liu, Zhuoliang, Ma, Bojie, Liu, Kai, Ren, Ren, Zhang, Yidong, Cai, Shiwei, and Huang, Yongqing
- Subjects
QUANTUM well lasers ,QUANTUM cascade lasers ,INDIUM gallium arsenide ,MOLECULAR beam epitaxy ,CHEMICAL vapor deposition ,SILICON ,YTTERBIUM ,THULIUM - Abstract
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers, including four sets of five-period strained-layer superlattices and the laser-structural layers, were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry–Pérot ones with a stripe width of 21.5 μm and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm
2 , respectively. The lasing wavelength is around 980 nm, and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility. [ABSTRACT FROM AUTHOR]- Published
- 2022
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