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Highcarrier concentration and low mobility in Bi2Se3 hide thetopological surface states (TSS). In the 2D ternary topological insulator (TI) Bi2–xSbxSe3,compensatory Sb doping regulates the carrier concentration and mobility withambipolar performance, together with the ultrathin thickness; these factorsmake the TSS in the 2D ternary TI Bi2–xSbxSe3 more observable. Here, a chemical vapor deposition (CVD) method is provided for synthesizing ultrathin Sb‐doped Bi2Se3 nanoplates with dimensions of 2–126 nm in thickness, 3–100 µm in lateral size, and an average Sb doping ranging from 0.15 ≤ x ≤ 0.75. Bi2–xSbxSe3 field effect transistors and Hall devices are manufactured to determine the carrier concentration and mobility of the obtained Bi2–xSbxSe3 nanoplates. These findings demonstrate that the 2D carrier concentration for Bi2–xSbxSe3 nanoplates can decrease up to 1.6 × 1012 cm–2. Furthermore, field‐effect mobility and Hall mobility of up to 3411 cm2 V–1s–1 and 6462 cm2 V–1 s–1, respectively, are realized. A strong ambipolar field effect is found in low‐carrier‐density Bi2–xSbxSe3 nanoplates, proving that these nanostructures may be freely controlled in terms of carrier type and concentration. The synthesis of high‐quality Bi2–xSbxSe3 nanoplates with low‐carrier concentration and high‐mobility provides a platform for investigating TI characteristics more clearly. [ABSTRACT FROM AUTHOR]

Most of the current methods for the synthesis of two-dimensional materials (2DMs) require temperatures not compatible with traditional back-end-of-line (BEOL) processes in semiconductor industry (450 °C). Here, we report a general BiOCl-assisted chemical vapor deposition (CVD) approach for the low-temperature synthesis of 27 ultrathin 2DMs. In particular, by mixing BiOCl with selected metal powders to produce volatile intermediates, we show that ultrathin 2DMs can be produced at 280–500 °C, which are ~200–300 °C lower than the temperatures required for salt-assisted CVD processes. In-depth characterizations and theoretical calculations reveal the low-temperature processes promoting 2D growth and the oxygen-inhibited synthetic mechanism ensuring the formation of ultrathin nonlayered 2DMs. We demonstrate that the resulting 2DMs exhibit electrical, magnetic and optoelectronic properties comparable to those of 2DMs grown at much higher temperatures. The general low-temperature preparation of ultrathin 2DMs defines a rich material platform for exploring exotic physics and facile BEOL integration in semiconductor industry. Chemical vapor deposition (CVD) is a versatile method to synthesize 2D materials, but usually requires high growth temperatures. Here, the authors report a BiOCl-assisted CVD approach to grow 2D nanosheets from 27 different layered and nonlayered materials at temperatures <500 °C, which are compatible with back-end-of-the-line industrial processes. [ABSTRACT FROM AUTHOR]

Abstract: 2D metallic vanadium dichalcogenides (VX2) have renewed interest due to their unique physical properties and potential applications as high‐performance functional nanomaterials. Herein, the synthesis and phase transitions of 2D metallic VX2 are investigated. The synthesis is done by chemical vapor deposition using hexagonal boron nitride and mica as substrates. High‐quality VX2 flakes with sub‐10 nm thickness are obtained and characterized by transmission electron microscopy. Temperature‐dependent Raman characterization between 330 and 5 K is conducted and remarkable changes of Raman modes at around 150 K for VS2 flakes and 110 K for VSe2 flakes are revealed, indicating charge density wave phase transitions. Temperature‐dependent electrical measurements have also supported the phase transitions observed in Raman characterization. [ABSTRACT FROM AUTHOR]