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Deals with a study which investigated the correlation between deposition conditions, films morphology and electrical characteristics of undoped polysilicon resistors. Fabrication of low-pressure chemically vapor deposited polycrystalline silicon; Characteristics feature of diffraction rings; Methodology and results.

Presents information on a study which examined structural experiments performed on silicon films formed by chemical-vapor deposition on silicon dioxide films using silane under pressures below 150 mTorr and temperatures below 640 degrees Centigrade. Methodology of the study; Results and discussion; Conclusion.

Low-pressure chemical deposition of silicon by the pyrolysis of pure silane at relatively low temperatures and pressures below 100 mTorr can lead to structurally well-defined films. Below 10 mTorr the films exhibit evidence of local epitaxial growth, which can be particularly well defined on Si(100) wafers chemically treated prior to deposition outside the deposition chamber. Even so, the interface was found to be highly strained, and high-resolution electron microscopy observations were used to analyze the defect structures in the epitaxial layer as initiated at the interface. [ABSTRACT FROM AUTHOR]