1. Facile Low-Temperature Approach to Tin-Containing ZnO Nanocrystals with Tunable Tin Concentrations Using Heterobimetallic Sn/Zn Single-Source Precursors.
- Author
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Tsaroucha, Marianna, Aksu, Yilmaz, Epping, Jan Dirk, and Driess, Matthias
- Subjects
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TIN , *ZINC oxide , *LOW temperatures , *NANOCRYSTALS , *ALKOXY group , *CHEMICAL reactions , *CRYSTAL structure - Abstract
Stannyl-substituted [(RZn)4(OR′)4] cubanes with different tin-containing alkoxy groups [Ph3SnOZnMe] ( 1), [Ph3SnOZnEt] ( 2), [Me3SnOZn tBu] ( 3), and [Ph3SnOZn tBu] ( 4) are easily accessible by Brønsted acid-base reaction of the corresponding triorganotin hydroxides with ZnMe2, ZnEt2, and Zn( tBu)2, respectively. All new compounds 1- 4 were characterized by various spectroscopic methods and the structures of 1 and 3 were confirmed by single-crystal X-ray diffraction analysis. The thermal degradation of the precursors 1-4 under dry synthetic air (20 % O2, 80 %N2) was studied and the final oxide materials were characterized by employing powder X-ray diffraction (PXRD) analysis, inductively coupled plasma-optical emission spectrometry (ICP-OES), transmission and scanning electron microscopy (SEM and TEM), energy dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). Remarkably, compounds 1 and 2 proved to be suitable as single-source precursors (SSPs) for the efficient preparation of tin-doped ZnO nanoparticles with tunable tin concentrations as a promising system for steering and improving the optoelectronic properties of tin-doped ZnO. Using 3 as SSP furnishes tin-containing ZnO materials with good electron mobilities at relatively low processing temperatures (350 °C) for thin-film transistor (TFT) applications. All the thin films of tin-doped ZnO prepared by spin-coating on silicon wafers are of great homogeneity and amorphous structure, which is promising for future applications in the field of transparent conducting oxides (TCOs). [ABSTRACT FROM AUTHOR]
- Published
- 2013
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