1. Initial interfacial reaction layers formed in Sn–3.5Ag solder/electroless Ni–P plated Cu substrate system
- Author
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Jee-Hwan Bae, Seung-Boo Jung, Min-Ho Park, Jae-Wook Lee, Jeong-Won Yoon, Han-Byul Kang, Cheol-Woong Yang, and Jae-Seon Ju
- Subjects
Materials science ,Mechanical Engineering ,Metallurgy ,Substrate (electronics) ,Condensed Matter Physics ,Nanocrystalline material ,law.invention ,Amorphous solid ,Chemical engineering ,Mechanics of Materials ,law ,Phase (matter) ,Soldering ,General Materials Science ,Crystallization ,Layer (electronics) ,Eutectic system - Abstract
Analytical electron microscopy (AEM) was used to examine the initial interfacial reaction layers between a eutectic Sn–3.5Ag solder and an electroless nickel-immersion gold-plated (ENIG) Cu substrate during reflow at 255 °C for 1 s. AEM confirmed that a thick upper (Au,Ni)Sn2 layer and a thin Ni3Sn4 layer had formed through the reaction between the solder and ENIG. The amorphous electroless Ni(P) plated layer transformed into two P-rich Ni layers. One is a crystallized P-rich Ni layer, and the other is an intermediate state P-rich Ni layer before the crystallization. The crystallized P-rich layer consisted of Ni2P and Ni12P5. A thin Ni2P layer had formed underneath the Ni3Sn4 layer and is believed to be a predecessor of the Ni2SnP ternary phase. A Ni12P5 phase was observed beneath the Ni2P thin layer. In addition, nanocrystalline Ni was found to coexist with the amorphous Ni(P) phase in the intermediate state P-rich Ni layer.
- Published
- 2008
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