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Epitaxial BaSnO3 (BSO) thin films doped with different rare-earth elements (La, Pr, and Nd) were prepared by a simple solution deposition method. Grain size engineering through processing was achieved to tune both lateral and vertical grain sizes, resulting in obvious increments in carrier mobility. Improved performance with the room-temperature mobility exceeding 35 cm2 V−1 s−1 and resistivity as low as 0.55 mΩ cm was realized. The results will open a low-cost route for preparation of large-area BSO thin films with improved optoelectronic properties through the solution method. [ABSTRACT FROM AUTHOR]

As a type of perovskite transparent conducting oxides, La-doped BaSnO3 is considered as a very important material to construct all transparent perovskite devices. The difficulty in achievement of large-area films with high electrical mobility has hindered the development of La-doped BaSnO3 films. Here, we report the results about chemical solution deposition of Ba0.92La0.08SnO3-δ (BLSO) films. The post-annealing and atmosphere as well as lattice mismatch have been investigated. Post-annealing at 1000 °C can obviously improve the performance due to the enhanced crystallization. Under post-annealing in N2 atmosphere the room-temperature resistivity and electrical mobility can achieve 3.25 mΩ cm and 11.09 cm² V-1 s-1, respectively, for the BLSO on LaAlO3 single crystal substrates due to the enhanced oxygen deficiencies. BLSO films with different orientation can be easily obtained by selection of the substrates, showing isotropic physical properties. Furthermore, the room-temperature resistivity and mobility are optimized to 1.8 mΩ cm and 23.04 cm² V-1 s-1 when SrTiO3 single crystal substrates with smaller lattice mismatch are used due to the decreased dislocation density. The results will provide an alternative route to fabricate large-area transparent conducting alkaline-earth stannate films with high performance using low-cost chemical solution deposition. [ABSTRACT FROM AUTHOR]