Search

Your search keyword '"Javadyan A"' showing total 2 results
Start Over Author "Javadyan A" Topic chalcogenide glass
2 results on '"Javadyan A"'

1. Chalcogenide glass surface passivation of a GaAs bipolar transistor for unique avalanche terahertz emitters and picosecond switches

Author

S. N. Vainshtein, Juha Kostamovaara, Rafael Hovhannisyan, Konstantin Tsendin, Guoyong Duan, and Valeri Javadyan

Subjects
Avalanche diode, Materials science, Physics and Astronomy (miscellaneous), Passivation, business.industry, Terahertz radiation, Picosecond, Bipolar junction transistor, Optoelectronics, Chalcogenide glass, Breakdown voltage, business, Avalanche breakdown
Abstract

The ultra-narrow “collapsing” field domains discovered recently in avalanching GaAs bipolar junction transistor provide a physical basis for designing unique THz emitters and superfast switches. Reliability in devices operating near their volume breakdown voltage requires decisive suppression of premature surface breakdown. We demonstrate here complete, durable surface breakdown suppression through simple deposition of a massive chalcogenide glass layer on the mesa surface by means of a negative charge formed at the interface.

Published
2012
Full Text
View/download PDF

2. Simple Requirement to Passivating Film/GaAs Interface for Avalanche Breakdown Suppression.

Author

Vainshtein, Sergey, Javadyan, Valeriy, Duan, Gouyong, Tsendin, Konstantin, and Kostamovaara, Juha

Subjects
*INTEGRATED circuit passivation, *SEMICONDUCTORS, *ELECTRONS, *CHALCOGENIDES, *GALLIUM arsenide
Abstract

Shown recently superfast (picosecond range) switching and copious sub-THz emission from a GaAs avalanche n+-p-n0-n+ bipolar junction transistor (BJT) makes the task of premature surface breakdown suppression critically important. Here we show that surface breakdown can be suppressed even for negatively beveled mesa by creating sufficiently high (~1012 cm-2) density of negative surface charge. This charge can be cause by surface-trapped avalanche-generated electrons or, alternatively, formed on the semiconductor/passivation film interface by proper selection of a passivation material. In particular we observed excellent passivation properties of a chalcogenide glass. [ABSTRACT FROM AUTHOR]

Published
2011

Catalog

Books, media, physical & digital resources
See catalog results