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Lightly n-type β-Ga 2 O 3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga 2 O 3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 1017 cm−3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at E c -0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors. • The monoclinic polytype of Ga 2 O 3 transforms under some irradiation conditions. Choice of irradiation conditions prevents emergence of competing polytypes. • Hydrogenation produces stable n-type conductivity to tthe range of the implanted O ions. • The data was interpreted by a mechanism involving formation of Ga v -H donor complexes and passivation of compensating Fe acceptor impurities. • Observations could form basis for Ga 2 O 3 power devices in radiation environments. [ABSTRACT FROM AUTHOR]