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Recent progress in silicon photonics has dramatically advanced the possible realization of heterogeneous logic circuits. A variety of Boolean optoelectronic circuits have been proposed. In this context, experimental investigation of logic operations with both optical and electrical inputs in chip-integrable devices is highly desirable. Here, we present a new kind of photodiode-based logic device using scalable heterojunctions of carbon nanotubes and silicon, the output currents of which can be manipulated completely by both optical and electrical inputs. This provides a novel platform for heterogeneous optoelectronic logic elements with voltage-switchable photocurrent responsivity of >1 A W−1, photovoltage responsivity of >1 × 105 V W−1, electrical on/off ratios of >1 × 105 and optical on/off ratios of >1 × 104. To demonstrate their scalability, we fabricated a large array of photoactive elements on a centimetre-scale wafer. We also present bidirectional phototransistors and novel clock-triggerable logic elements such as a mixed optoelectronic AND gate, a 2-bit optoelectronic ADDER/OR gate and a 4-bit optoelectronic digital-to-analog converter. [ABSTRACT FROM AUTHOR]

Abstract: We present a detailed investigation of the formation of stable catalyst particles on Inconel substrates, an important step in the growth mechanism of carbon nanotubes on these substrates. The chemical nature of the interaction of catalyst and substrate was investigated using XPS, high-resolution cross-sectional TEM, and EDS studies. The results indicate that Cr2O3, an electrically conductive oxide, plays an important role in stabilizing nanoclusters of Fe catalyst under typical growth conditions. The nature of growth on a number of other superalloys is also presented and is examined with respect to their chemical composition. [Copyright &y& Elsevier]

This work reports on thermal and electrical conductivities and interface resistances for transport along aligned multiwalled carbon nanotubes (CNT) films grown on a nickel superalloy (Inconel) substrate. The measured specific thermal resistance of the combined Inconel-CNT and indium-CNT interfaces is of the same order as reported for CNT and silicon or SiO2 interfaces but much higher than theoretical predictions considering perfect contact between the tubes and substrate. Imperfect mechanical contact with the substrate and a large contribution caused by indium-CNT interface are thought to be mainly responsible for the high interface resistances and the low effective values of thermal and electrical conductivities. However, reported results represent an incentive for further research on CNT synthesis on metallic substrates for thermal management applications and pave the way for much easier integration of carbon nanotubes in electronic applications. [ABSTRACT FROM AUTHOR]

Abstract: A method is presented for significantly reducing the interfacial contact resistance of single-walled carbon nanotube (SWCNT) interconnects test-structures. Conventional lithographic cleaning steps are insufficient for complete removal of lithographic residues in SWCNT networks, leading to large interfacial contact resistance. Using improved purification procedures and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au were found to reach values below 2% of the overall resistance in two-probe test-structures of SWCNTs, demonstrating the importance of cleaning lithographic residues from the surface of SWCNTs before the fabrication of metal electrodes. These low-resistance contacts are quite stable over a large temperature range, and represent a step towards the implementation of SWCNTs as future interconnects. [Copyright &y& Elsevier]