Search

Abstract: Tantalum carbide with a TaC0.9 composition was sintered to 96% relative density by spark plasma sintering at 1400°C for 5min, using commercial micrometric Ta and TaC powders as the starting materials. This achievement was dependent on the delicate rearrangement of the heating process which limits evaporation–condensation and promotes the mass transportation in association with 0.9TaC+Ta=TaC0.9 reaction. The dense TaC0.9 ceramic had a uniform microstructure composed of equiaxed grains, and showed flexure strength up to ∼498MPa. [Copyright &y& Elsevier]

• The adding vanadium to (TiZrHfVNbTa)C favors eliminating Nb segregation and enhancing densification. • Excess adding vanadium reduces single-phase-forming ability of (TiZrHfVNbTa)C, due to the lattice distortion increment. • Mechanical properties of (TiZrHfVNbTa)C is optimized via adjusting vanadium content and sintering temperature. A series of (TiZrHfVNbTa)C high-entropy ceramics with different vanadium contents have been fabricated by pressureless sintering at 2300 °C–2500 °C for 1 h, utilizing self-synthesized carbide powders obtained by carbothermal reduction. The addition of vanadium is beneficial to promote densification process and refine grain, as well as facilitate the homogeneous distribution of metal elements. The distribution of pores is also modified, almost entirely existing at grain boundary, and the integral mechanical properties achieve optimization. However, excess adding vanadium does not favor forming a single-phase (TiZrHfVNbTa)C high-entropy ceramic. The optimal (TiZrHfVNbTa)C high-entropy ceramic sintered at 2300 °C possesses a high relative density of 97.5 % and homogeneous microstructure with small grain size of 1.2 μm. The flexural strength and Vickers hardness reach 473 MPa and 24.9 GPa, respectively. This work has established a cost-effective and convenient preparation of novel (TiZrHfVNbTa)C high-entropy carbide ceramics. [ABSTRACT FROM AUTHOR]

β – SiC powder mixed with 10 wt.% Al 2 O 3 and Y 2 O 3 powder in a molar ratio of 2: 3 was consolidated by spark plasma sintering (SPS) at 1700–1900 °C. Three SPS routes were designed to contrast the effects of passing a strong direct current (DC) on the densification behavior of the SiC materials. The wetting of the Y – Al – Si – O liquid to the SiC particles was increased by the DC, hence better densification. The resultant SiC ceramic had a finer uniform microstructure and high flexural strength. [ABSTRACT FROM AUTHOR]