1. Ferroelectric Undoped HfOx Capacitor With Symmetric Synaptic for Neural Network Accelerator.
- Author
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Luo, Jun-Dao, Lai, Yu-Ying, Hsiang, Kuo-Yu, Wu, Chia-Feng, Yeh, Yun-Tien, Chung, Hao-Tung, Li, Yi-Shao, Chuang, Kai-Chi, Li, Wei-Shuo, Liao, Chun-Yu, Chen, Pin-Guang, Chen, Kuan-Neng, Lee, Min-Hung, and Cheng, Huang-Chung
- Subjects
ATOMIC layer deposition ,CAPACITORS ,GRAZING incidence ,FERROELECTRIC transitions ,X-ray diffraction - Abstract
A plasma-based ferroelectric undoped HfO
x capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal–ferroelectric–metal (MFM) capacitor presents excellent remnant polarization (Pr ) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp /αd = −0.08/−1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp −αd |) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse). [ABSTRACT FROM AUTHOR]- Published
- 2021
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