1. Ultralow-k Dielectric With Structured Pores for Interconnect Delay Reduction.
- Author
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Xiao, Ying, Ma, Zichao, Prawoto, Clarissa, Zhou, Changjian, and Chan, Mansun
- Subjects
- *
DIELECTRICS , *PERMITTIVITY , *POROUS materials , *DIELECTRIC measurements , *POROSITY - Abstract
An ultralow-k dielectric using structured pores to reduce interconnect propagation delay is demonstrated. By using a carbon nanotube (CNT) template, porous oxide with vertical cylindrical pores is formed on the Si3N4 etch-stop layer and successfully integrated with the copper damascene process. The resulting dielectric is anisotropic with an interlayer dielectric constant of k = 1.97 and an intralayer dielectric constant of k = 1.75 at a porosity of 65%. Compared with the conventional porous material with randomly arranged spherical pores, a much higher elastic modulus of 15.7 GPa is achieved to allow the chemical mechanical polish process at a porosity of 65%. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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