1. Advanced process and electron device technology
- Author
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Yajuan Su, Fei Zhao, Tianchun Ye, Li Junjie, Luo Yanna, Xiaolei Wang, Huaxiang Yin, Dan Zhang, Hong Yang, Wei Yayi, Anyan Du, Wang Wenwu, Yongliang Li, Hao Chang, Qide Yao, Su Xiaojing, Tao Yang, Xueli Ma, Hao Xu, Junfeng Li, Xiaobin He, Zhenhua Wu, Huilong Zhu, and Jun Luo
- Subjects
Multidisciplinary ,Fin ,Process (engineering) ,Computer science ,business.industry ,Electron device ,law ,Transistor ,Electrical engineering ,Technological evolution ,Integrated circuit ,business ,law.invention - Abstract
This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore's law will undoubtedly continue in the next 15 years.
- Published
- 2022