1. Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
- Author
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Qing-Tai Zhao, Qinghua Han, Paulus Aleksa, Siegfried Mantl, Juergen Schubert, and Thomas Carl Ulrich Tromm
- Subjects
010302 applied physics ,Materials science ,Subthreshold conduction ,business.industry ,Oxide ,02 engineering and technology ,Trapping ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Polarization (waves) ,01 natural sciences ,Ferroelectricity ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Materials Chemistry ,Steep slope ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Drain current ,Negative impedance converter - Abstract
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed for the steep slope. We found that the sub-thermal SS degrades with the cycling measurements, which is assumed to be caused by the trap charging in the ferroelectric oxide layer. The tradeoff between polarization and charge trapping is responsible for the subthreshold behavior of the device.
- Published
- 2019
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