1. Field emission from geometrically modulated tungsten-nickel sulfide / graphitic carbon nanobelts on Si microchannel plates
- Author
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Quanliang Zhao, Lianwei Wang, Bin Qian, Paul K. Chu, Shi Tao, Dajun Wu, Wei Ou-Yang, Chen Yuyao, and Xuekun Hong
- Subjects
Nickel sulfide ,Materials science ,chemistry.chemical_element ,02 engineering and technology ,Tungsten ,01 natural sciences ,chemistry.chemical_compound ,Electric field ,0103 physical sciences ,Materials Chemistry ,010302 applied physics ,Microchannel ,business.industry ,Process Chemistry and Technology ,021001 nanoscience & nanotechnology ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Nickel ,Field electron emission ,chemistry ,Nanoelectronics ,Ceramics and Composites ,Optoelectronics ,0210 nano-technology ,business ,Current density - Abstract
The low efficiency and instability of electron emission from two-dimensional (2D) materials such as WS2 and NiS hamper application to vacuum microelectronic devices. Although nickel-based alloys have many favorable physicochemical properties suitable for nanoelectronics, electron field emission (FE) from heterostructures comprising tungsten-nickel sulfide alloys and graphite carbon (WNi–S/C) has been seldom studied because it is difficult to fabricate the nanostructures in situ. In this work, field emitters composed of the WNi–S/C nanobelt composite are produced on Si microchannel plates (WNi–S/C@Si) hydrothermally. The structure has a porous and vertically aligned 3D morphology in addition to excellent adhesion strength with the substrate. Geometrical modulation of the WNi–S/C@Si is performed by changing the hydrothermal reaction temperature and an ultralow turn-on electric field of 0.51 V μm−1 for a current density 0.1 mA cm−2, threshold electric field of 0.65 V μm−1 for a current density of 1 mA cm−2, and stability of 97.1% for 8 h are accomplished. The related mechanisms are investigated and discussed. Moreover, finite element simulation shows that not only the shape of the nanostructures but also the high aspect plays a key role in reducing screen effects. These outstanding properties suggest large potential in high-performance FE and vacuum nanodevices.
- Published
- 2021