Search

Your search keyword '"Pedro Rojo-Romeo"' showing total 138 results
Start Over Author "Pedro Rojo-Romeo" Topic business.industry
138 results on '"Pedro Rojo-Romeo"'

1. Use of epitaxial PZT thin films for La2/3Sr1/3MnO3 based MEMs devices on SrTiO3/Si

Author

Zhe Wang, G. Poullain, Bertrand Vilquin, Laurence Méchin, Victor Pierron, Laryssa Mirelly Carvalho De Araujo, Darrell G. Schlom, Carolina Adamo, Pedro Rojo Romeo, Christophe Cibert, Jacques Junior Manguele, B. Domengès, Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Laboratoire de cristallographie et sciences des matériaux (CRISMAT), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC), École Centrale de Lyon (ECL), Université de Lyon, Department of Materials Science and Engineering, Cornell University, USA, Cornell University [New York], Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum)

Subjects
Molecular beam epitaxial growth, Micromechanical devices, Materials science, Epitaxial PZT, Electromechanical effects, Magnetic field measurement, Dielectric polarisation, Piezoelectric thin films, Pulsed laser deposition, Magnetic films, Zirconium compounds, PFM, Lead compounds, Epitaxy, Lead zirconate titanate, Lanthanum compounds, 7. Clean energy, Dielectric losses, Fabrication, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Epitaxial growth, Electromechanical electrodes, Expitaxial layers, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrodes, ComputingMilieux_MISCELLANEOUS, Measurement by laser beam, Oxide electrodes, business.industry, Voltage measurement, Sputter deposition, Ferroelectricity, Piezoelectricity, Strontium compounds, chemistry, Optoelectronics, business, Piezoelectric MEMS, Molecular beam epitaxy
Abstract

International audience; Lead zirconate titanate Pb(Zr,Ti)O 3 (PZT) is a well know ferroelectric material with excellent piezoelectric properties, namely large piezoelectric coefficients, low leakage current and reliable performance, which makes it very suitable as an actuator material in Micro-ElectroMechanical Systems (MEMS). The performance of piezoelectric MEMS is, however, strongly dependent on the film quality. In the present work, the epitaxial growth of PZT is desired as it can help to reduce high-frequency losses, to allow for larger electromechanical coupling and to increase the final device sensitivity. We used an epitaxially grown conductive oxide bottom electrode, namely 45 nm thick La 2/3 Sr 1/3 MnO 3 (LSMO) films, deposited on SrTiO 3 buffered (001) silicon substrates using a combination of pulsed laser deposition and reactive molecular beam epitaxy techniques. The 500 nm thick c-axis oriented PZT layers were deposited at 600°C by magnetron sputtering on the LSMO films on STO/Si (001). The piezoelectric and ferroelectric properties of the PZT layers were studied by PiezoForce Microscopy on as-grown PZT films and Polarization versus Electric field measurements on samples covered with Pt top electrodes. The PZT films exhibited good piezoelectric and ferroelectric properties with a remanent polarization higher than 20 µC·cm −2 , which makes them suitable for the fabrication of piezoelectric MEMS based on doubly-clamped LSMO suspended structures.

Published
2021
Full Text
View/download PDF

2. Tunable Mie-Resonant Dielectric Metasurfaces Based on VO 2 Phase-Transition Materials

Author

Shriram Ramanathan, Aditya Tripathi, Regis Orobtchouk, Yuri S. Kivshar, Lotfi Berguiga, Sébastien Cueff, Pedro Rojo Romeo, Zhen Zhang, Sergey Kruk, Jimmy John, Hai Son Nguyen, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), ANR, ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Phase transition, Materials science, vanadium dioxide, Holography, Physics::Optics, phase-change materials, 02 engineering and technology, Dielectric, 01 natural sciences, near-infrared, law.invention, spectral modulation, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, Condensed Matter::Materials Science, Vanadium dioxide, law, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum optics, business.industry, Near-infrared spectroscopy, 021001 nanoscience & nanotechnology, metasurfaces, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, tunable nanophotonics, Photonics, 0210 nano-technology, business, Biotechnology
Abstract

International audience; Dielectric metasurfaces have become efficient tools for creating ultrathin optical components with various functionalities for imaging, holography, quantum optics, and topological photonics. While static all-dielectric resonant metaphotonics is reaching maturity, challenges remain in the design and fabrication of efficient reconfigurable and tunable metasurface structures. A promising pathway toward tunable metasurfaces is by incorporating phase-transition materials into the photonic structure design. Here we demonstrate Mie-resonant silicon-based metasurfaces tunable via the insulator-to-metal transition of a thin VO2 layer with reversible properties at telecom wavelengths. We experimentally demonstrate two regimes of functional tunability driven by the VO2 transition: (i) 2 orders of magnitude modulation of the metasurface transmission, (ii) spectral tuning of near-perfect absorption. Both functionalities are accompanied by a hysteresis-like behavior that can be exploited for versatile memory effects. Beyond this demonstration of multifunctional properties, this work provides a general framework to efficiently use the full complex refractive index tuning of VO2, for both its refractive index modulation and optical absorption tuning. Tunable dielectric metasurfaces may find their applications in various photonics technologies including optical communications, information storage, imaging, detectors, and sensors.

Published
2021
Full Text
View/download PDF

3. Slot ARROW Waveguide: A New Platform for Optical Sensing

Author

Ali Belarouci, Regis Orobtchouk, Pedro Rojo-Romeo, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Fabrication, business.industry, Physics::Optics, Optical ring resonators, 02 engineering and technology, 021001 nanoscience & nanotechnology, Cladding (fiber optics), Waveguide (optics), law.invention, 020210 optoelectronics & photonics, law, 0202 electrical engineering, electronic engineering, information engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photolithography, Photonics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ARROW waveguide, Plasmon, ComputingMilieux_MISCELLANEOUS
Abstract

The realization of high sensitivity integrated photonic sensors requires strong light/matter interaction. Unfortunately, in an optical waveguide, only the evanescent part of the mode interacts with the cladding medium under test. In this context, we have patented a new concept of waveguide [1] called “Slot ARROW”, where the major part of the light is confined in the cladding such as metallic plasmonic and dielectric slot waveguides. This paper presents the modelling, the fabrication and the optical characterization of slot ARROW waveguides. Optical modelling shows that the main advantages of Slot ARROW waveguides are a reduction of propagation losses and the sustaining monomode condition for widths 100 times larger than the slot or plasmonic waveguides. The fabrication process is more robust as it only needs the structuration of the upper layer with standard optical lithography and a RIE etching step. The critical lateral dimension is relaxed to $0.9\ \mu \mathrm{m}$ compared to $0.1\ \mu \mathrm{m}$ for the grooves of slot or plasmonic 2D waveguides. Basic building blocks for optical routing have been designed and preliminary characterizations demonstrate the validity of this new concept.

Published
2020
Full Text
View/download PDF

4. Towards active photonic dispersion control using graphene-induced non-radiative loss

Author

Geneviève Grenet, Malik Kemiche, Thomas Wood, Jérémy Lhuillier, Sébastien Cueff, Christelle Monat, Xavier Letartre, Pierre Demongodin, Bertrand Vilquin, Pedro Rojo-Romeo, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and INL - Matériaux Fonctionnels et Nanostructures (INL - MFN)

Subjects
Materials science, business.industry, Graphene, Oxide, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Spatial modulation, law.invention, 010309 optics, chemistry.chemical_compound, chemistry, law, 0103 physical sciences, Dispersion (optics), Radiative transfer, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Photonics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Absorption (electromagnetic radiation), business
Abstract

International audience; We show that the photonic dispersion of a two coupled-mode system can be actively tuned using graphene-induced non-radiative loss. Our implementation exploits the spatial modulation of graphene's absorption via patterned oxide substrates.

Published
2020
Full Text
View/download PDF

5. Tunable Mie-resonant dielectric metasurfaces based on VO2 phase-change materials

Author

Lotfi Berguiga, Shriram Ramanathan, Jimmy John, Hai Son Nguyen, Yuri S. Kivshar, Sergey Kruk, Pedro Rojo Romeo, Zhen Zhang, Sébastien Cueff, Regis Orobtchouk, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016)

Subjects
0303 health sciences, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Silicon, Physics::Instrumentation and Detectors, business.industry, Physics::Optics, chemistry.chemical_element, 02 engineering and technology, Dielectric, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Amplitude modulation, Split-ring resonator, 03 medical and health sciences, Reflection (mathematics), chemistry, Modulation, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Order of magnitude, 030304 developmental biology
Abstract

International audience; We demonstrate Mie-resonant silicon metasurfaces tunable via the insulator-to-metal transition of a deposited VO2 layer. We observe two orders of magnitude modulation depth of the metasurface reflection with reversible properties and a hysteresis-like behavior. OCIS codes: (160.4236) Nanomaterials; (310.6628) Subwavelength structures, nanostructures; (220.4241) Nanostructure fabrication 1. Introduction Metasurfaces have emerged as a flexible and efficient platform for manipulating electromagnetic waves. Although there has been a considerable progress in the development of plasmonic metasurfaces, some of their functionalities remain compromised by Ohmic losses and heating. More recent developments suggest an alternative way towards highly efficient metasurfaces based on Mie-resonant nanostructures made of high-index dielectric materials [1]. While static all-dielectric resonant metaphotonics is reaching maturity, big challenges remain in the design and fabrication of efficient reconfigurable and tunable structures [2] that are highly desirable for a number of applications in optical communications, information storage, imaging, detectors, and sensors. A promising pathway towards tunable metasurfaces is an incorporation of phase-change materials into the design. While substantial efforts have been made towards tunable nanophotonic devices made of metallic nanostructures coupled to various phase-change materials such as GeSbTe, VO2, etc. [2-4], all-dielectric tunable nanostructures remain largely unexplored. In particular, VO2 is an attractive phase-change material [5] and its tunability occurs at temperatures close to ambient (~68°C). The transition can be triggered thermally, optically, or electrically. Furthermore, the dynamical change of phase corresponds to a crystalline-to-crystalline transition and therefore not accompanied by catastrophic volume change, void creation, etc, enabling a hybrid integration of this material into complex nanostructures. Therefore, VO2 is compatible with materials and/or technologies that cannot support thigh temperatures and high energy pulses needed to switch back and forth other phase-change materials such as GST. Nanofabrication of VO2 remains largely premature, and its hybrid integration with dielectric nanophotonics imposes significant challenges.

Published
2020
Full Text
View/download PDF

6. Improving silicon nitride ring resonator performances on 300 mm industrial environment for point of care applications (Conference Presentation)

Author

Romain Stricher, Michele Calvo, Pauline Girault, Laurence Mercier-Coderre, Michael Canva, Regis Orobtchouk, Paul G. Charette, Guillaume Beaudin, Serge Ecoffey, Stephane Monfray, Pedro Rojo-Romeo, Dominique Drouin, Frederic Boeuf, Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, media_common.quotation_subject, Ring (chemistry), [SPI]Engineering Sciences [physics], Resonator, Presentation, chemistry.chemical_compound, Silicon nitride, chemistry, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS, Point of care, media_common
Abstract

International audience

Published
2020
Full Text
View/download PDF

7. Structural studies of epitaxial BaTiO3 thin film on silicon

Author

Bertrand Vilquin, Pedro Rojo-Romeo, Yves Robach, L. Dai, Baba Wague, Pascal Roy, J.-B. Brubach, G. Dong, Guillaume Saint-Girons, Gang Niu, Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), and Université de Lyon

Subjects
Materials science, Silicon, Infrared spectroscopy, chemistry.chemical_element, 02 engineering and technology, Epitaxy, 01 natural sciences, Crystallinity, Phase (matter), 0103 physical sciences, Materials Chemistry, Thin film, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Metals and Alloys, Surfaces and Interfaces, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Ferroelectricity, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business
Abstract

International audience; Keywords: Ferroelectricity Thin films Silicon Epitaxy Radio-frequency magnetron sputtering Infrared spectroscopy Phonon A B S T R A C T BaTiO 3 thin films (60 nm-thick) grown on SrTiO 3 /Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO 3 film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO 3 are absent in the films due to the clamping effect from the Si substrate.

Published
2020
Full Text
View/download PDF

8. Towards low-power near-infrared modulators operating at telecom wavelengths: when graphene plasmons frustrate their metallic counterparts

Author

Jérémy Lhuillier, Pierre Demongodin, Xavier Letartre, Philippe Regreny, Aziz Benamrouche, Malik Kemiche, Christelle Monat, Ségolène Callard, Pedro Rojo-Romeo, Thomas Wood, Bertrand Vilquin, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), H2020 ERC project, European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics::Optics, 02 engineering and technology, Coupled mode theory, 7. Clean energy, 01 natural sciences, law.invention, 010309 optics, Resonator, law, 0103 physical sciences, Surface plasmon resonance, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Plasmon, Graphene, business.industry, Statistical and Nonlinear Physics, 021001 nanoscience & nanotechnology, Surface plasmon polariton, Atomic and Molecular Physics, and Optics, Wavelength, Excited state, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; A free-space electro-optic modulator device exploiting graphene's surface plasmon polariton (SPP) at near-infrared frequencies is proposed and theoretically studied. The device is made up of two resonant structures, the first being a metallic SPP displaying broadband absorption, and the second graphene's own SPP, which is shown to frustrate the metallic plasmon when excited, leading to a narrow reflectance peak. Doping of the graphene to achieve Fermi-level tuning is shown to shift the wavelength of the frustration phenomenon, thereby enabling the use of the device as a modulator. A reduction of 20% in the switching energy is expected due to the unique principle of operation which, crucially and contrary to most work in this field, does not rely on electroabsorption but electrorefraction changes in graphene. This coupled SPP resonator geometry also permits efficient channeling of optical energy from free space into graphene's SPP at near-infrared frequencies.

Published
2020
Full Text
View/download PDF

9. Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Author

Jordan Bouaziz, Bertrand Vilquin, Pedro Rojo Romeo, Nicolas Baboux, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), INL - Dispositifs Electroniques (INL - DE), and INL - Hétéroepitaxie et Nanostructures (INL - H&N)

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Wake, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Reduction (complexity), 0103 physical sciences, Materials Chemistry, Electrochemistry, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, [CHIM.MATE]Chemical Sciences/Material chemistry, Sputter deposition, 021001 nanoscience & nanotechnology, Ferroelectricity, Electronic, Optical and Magnetic Materials, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, Tin, business
Abstract

The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant pol...

Published
2019
Full Text
View/download PDF

10. Morphological Effects in Photonic Integrated Nanojet

Author

Pedro Rojo Romeo, Michele Calvo, Ali Belarouci, Regis Orobtchouk, Oleksii Hudz, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
3D optical data storage, Materials science, Scattering, business.industry, Photonic integrated circuit, Physics::Optics, 02 engineering and technology, Waveguide (optics), Biophotonics, Wavelength, 020210 optoelectronics & photonics, Optics, Nanolithography, 0202 electrical engineering, electronic engineering, information engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Photonics, business, ComputingMilieux_MISCELLANEOUS
Abstract

We report a study of the shape-dependent optical response of a photonic nanojet created by a single Si x N y microdisk illuminated by a waveguide. High intensity sub-wavelength spots and low divergence nanojets are observed at the telecommunication wavelengths. Light scattered from the disk is observed by imaging from above. The electromagnetic distributions inside and outside the microdisk are calculated by using finite-difference-time-domain method and compared to the experimental image. We demonstrate that small morphology variations can have a major impact on the optical properties of the entire system. These results deepen our understanding between the disk morphology and its optical response and provide insight toward potential applications in high-resolution optical imaging, biophotonics, and optical data storage.

Published
2019
Full Text
View/download PDF

11. Vanadium Oxide Based Waveguide Modulator Integrated on Silicon

Author

Pedro Rojo-Romeo, Bertrand Vilquin, Zhen Zhang, Shriram Ramanathan, Jimmy John, Sébastien Cueff, Regis Orobtchouk, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Purdue University [West Lafayette], and ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016)

Subjects
Silicon photonics, Materials science, Silicon, business.industry, Transmission loss, Physics::Optics, chemistry.chemical_element, law.invention, Semiconductor, chemistry, law, Modulation, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Light emission, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Refractive index, Waveguide
Abstract

International audience; Silicon photonics is now a mature field of research with efficient passive building blocks such as waveguides, routers and modulators. Silicon, as a material though, is not the best material for light emission and electro-optical modulation functionalities. To circumvent those limitations, researchers integrate heterogeneous materials such as for example III-V semiconductors, rare-earth-doped oxides and ferroelectric oxides on silicon. In this communication, we present a simple and innovative straight waveguide modulator design based on the phase change properties of Vanadium dioxide (VO2). VO2 is a strongly correlated material with unique insulator-to-metal transition (IMT) property. This IMT is accompanied by a structural modification as well as an extremely large modulation of the refractive index in the near-infrared range. We leverage this strong optical tunability in hybrid Silicon/VO2 waveguides for optical modulation. Specifically, by spatially separating the modulator from the bus waveguide, we both exploit the changes in refractive index and extinction coefficients to maximize modulation as well as minimize transmission loss. We will show how our design enable compact and efficient devices that can be readily integrated on standard Silicon photonics platform. We further discuss on the latest experimental results, expected performances compared to the state-of-the-art and future devices. We acknowledge funding from the French National Research Agency (ANR) under the project SNAPSHOT (ANR-16-CE24-0004)

Published
2019
Full Text
View/download PDF

12. Saturable absorption of nonlinear graphene coated waveguides

Author

Christelle Monat, Ségolène Callard, Houssein El Dirani, Pedro Rojo-Romeo, Thomas Wood, Christian Grillet, Corrado Sciancalepore, Malik Kemiche, Pierre Demongodin, Jérémy Lhuillier, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), H2020 EU project, European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Demongodin, Pierre

Subjects
Silicon nitride, Nonlinear photonics, Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, chemistry.chemical_compound, Four-wave mixing, law, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, Graphene, business.industry, graphene, guided-wave optics, Saturable absorption, 021001 nanoscience & nanotechnology, Wavelength, Nonlinear system, chemistry, Mode-locking, Picosecond, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; We investigate the saturable absorption of hybrid graphene/ silicon-nitride waveguides at telecom wavelengths. By measuring the power dependent transmission of picosecond and sub-picosecond pulses, we clarify the temporal dynamics of photo-excited carriers in graphene.

Published
2019
Full Text
View/download PDF

13. Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

Author

Pedro Rojo Romeo, Wei Ren, Dai Liyan, Wu Heping, Bertrand Vilquin, Ya-Hong Xie, Jordan Bouaziz, Yankun Wang, Gang Niu, Yanxiao Sun, Jiang Luyue, Jinyan Zhao, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, QC1-999, General Physics and Astronomy, Field effect, 02 engineering and technology, Dielectric, 7. Clean energy, 01 natural sciences, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, High-κ dielectric, 010302 applied physics, business.industry, Physics, Transistor, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Ferroelectricity, Threshold voltage, Hysteresis, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Field-effect transistor, 0210 nano-technology, business
Abstract

International audience; Field effect transistors (FETs) using two-dimensional molybdenum disulfide (MoS 2) as the channel material has been considered one of the most potential candidates for future complementary metal-oxide-semiconductor technology with low power consumption. However, the understanding of the correlation between the device performance and material properties, particularly for devices with scaling-down channel lengths, is still insufficient. We report in this paper back-gate FETs with chemical-vapor-deposition grown and transferred MoS 2 and Zr doped HfO 2 ((Hf,Zr)O 2 , HZO) high-k dielectric gates with channel lengths ranging from 10 to 30 μm with a step of 5 μm. It has been demonstrated that channels with the length to width ratio of 0.2 lead to the most superior performance of the FETs. The MoS 2 /HZO hybrid FETs show a stable threshold voltage of ∼1.5 V, current on/off ratio of >10 4 , and field effect mobility in excess of 0.38 cm 2 V −1 s −1. The impact of the channel lengths on FET performance is analyzed and discussed in depth. A hysteresis loop has been observed in the I ds − Vgs characteristics of the hybrid FETs, which has been further studied and attributed to the charge effect at the interfaces. The HZO films show a relatively weak ferroelectric orthorhombic phase and thus serve mainly as the high-k dielectric gate. Charge trapping in the HZO layer that might induce hysteresis has been discussed. Our results show that MoS 2 /HZO hybrid FETs possess great potential in future low power and high-speed integrated circuits, and future work will focus on further improvement of the transistor performances using ferroelectric HZO films and the study of devices with even shorter MoS 2 channels.

Published
2021
Full Text
View/download PDF

14. Ring Resonator Designed for Biosensing Applications Manufactured on 300 mm SOI in an Industrial Environment

Author

Michele Calvo, Stephane Monfray, Sylvain Guerber, Charles Baudot, Regis Orobtchouk, Pedro Rojo Romeo, Paul G. Charette, F. Bœuf, Guillaume Beaudin, Michael Canva, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics, STMicroelectronics [Crolles] (ST-CROLLES), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), business.industry, [SDV]Life Sciences [q-bio], General Engineering, General Physics and Astronomy, Silicon on insulator, 02 engineering and technology, Ring (chemistry), 01 natural sciences, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Biosensor, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018
Full Text
View/download PDF

15. Slow Light Dispersion Engineering of Active Photonic Crystal Cavities for Compact and Integrated Mode-Locked Lasers

Author

Xavier Letartre, Malik Kemiche, Radoslaw Mazurczyk, Pedro Rojo-Romeo, Philippe Regreny, Aziz Benamrouche, Jérémy Lhuillier, Thomas Wood, Ségolène Callard, Christelle Monat, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), INL - Hétéroepitaxie et Nanostructures (INL - H&N), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Dispersion engineering, Materials science, business.industry, Physics::Optics, 02 engineering and technology, Chip, Laser, Slow light, law.invention, 020210 optoelectronics & photonics, law, Dispersion (optics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Laser mode locking, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Photonic crystal
Abstract

International audience; We realize compact active photonic crystal cavities for miniaturized chip-based pulsed lasers. We experimentally validate our approach relying on slow-light dispersion engineering for sustaining the intended regular comb of modes from a 30 µm long cavity.

Published
2018
Full Text
View/download PDF

16. Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene

Author

Xavier Letartre, Alexandra Pavlova, Pedro Rojo-Romeo, P. Regreny, Christelle Monat, Pierre Viktorovitch, Elena D. Obraztsova, and Christian Seassal

Subjects
Materials science, business.industry, Graphene, Mode (statistics), 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, law.invention, law, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Photonic crystal
Published
2013
Full Text
View/download PDF

17. Towards high-speed electro-optical performance in a hybrid BaTiO3/Si Mach-Zehnder modulator

Author

Pablo Sanchis, Pedro Rojo Romeo, P. Castéra, Sébastien Cueff, A. M. Gutierrez, Regis Orobtchouk, Guillaume Saint-Girons, Alvaro Rosa, and Domenico Tulli

Subjects
Materials science, Silicon, business.industry, Impedance matching, Electro-optic modulator, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Modulation bandwidth, 020210 optoelectronics & photonics, chemistry, Electrode, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Radio frequency, 0210 nano-technology, business
Abstract

A Mach-Zehnder modulator based on a hybrid BaTiO 3 /silicon optical waveguide has been designed to achieve a high modulation bandwidth with a simulated V π L below 1V·cm and RF impedance matching. The device has been fabricated and characterized in the DC regime.

Published
2016
Full Text
View/download PDF

18. Electro-Optical Modulation Based on Pockels Effect in BaTiO3 With a Multi-Domain Structure

Author

Pedro Rojo Romeo, Pablo Sanchis, Guillaume Saint-Girons, Regis Orobtchouk, P. Castéra, Sébastien Cueff, A. M. Gutierrez, Domenico Tulli, Nanophotonics Technology Center, Universitat Politècnica de València (UPV), DAS Photonics (DAS Photonics), DAS Photonics, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Ferroelectrics, Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Modulators, Rotation, Waveguide (optics), [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, Optics, TEORIA DE LA SEÑAL Y COMUNICACIONES, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrooptical devices, business.industry, Optical polarization, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Pockels effect, Electronic, Optical and Magnetic Materials, Electrooptical waveguides, Electrooptic modulators, Optical modulator, chemistry, Modulation, Optical variables control, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Optical refraction, Waveguide modulator, 0210 nano-technology, business, Voltage
Abstract

[EN] The influence of an in-plane multi-domain structure in BaTiO3 films grown on SrTiO3/Si buffers for highly efficient electro-optic modulation has been analyzed. The modulation performance can be significantly enhanced by rotating a certain angle, the optical waveguide, with respect to the BaTiO3 crystallographic axes. A robust electro-optical performance against variations in the domain structure as well as the lowest V-pi voltage can be achieved by using the rotation angles between 35 degrees and 55 degrees. Our calculations show that Vp voltages below 1.7 V for a modulation length of 2 mm can be obtained by means of a CMOS compatible hybrid silicon/BaTiO3 waveguide structure., This work was supported by the European Commission under Grant FP7-ICT-2013-11-619456 SITOGA. The work of P. Sanchis was supported in part by GVA under Grant PROMETEOII/2014/034 and in part by the Ministerio de Economia y Competitividad under Grant TEC2012-38540 LEOMIS.

Published
2016
Full Text
View/download PDF

19. Low-Loss and Compact Silicon Rib Waveguide Bends

Author

Pablo Sanchis, Pedro Rojo Romeo, Amadeu Griol, Sébastien Cueff, Regis Orobtchouk, Andrea Zanzi, Antoine Brimont, Xuan Hu, Guillaume Saint Girons, Nanophotonics Technology Center, Universitat Politècnica de València (UPV), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
Materials science, Silicon, Rib waveguides, Bend radius, Silicon photonics, Physics::Optics, chemistry.chemical_element, 02 engineering and technology, Waveguide (optics), 020210 optoelectronics & photonics, Optics, TEORIA DE LA SEÑAL Y COMUNICACIONES, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Leakage (electronics), Coupling, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Optical design, Integrated optics, Radius, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Waveguide bends, chemistry, Slab, Physics::Accelerator Physics, business
Abstract

[EN] Waveguide bends support intrinsically leaky propagation modes due to unavoidable radiation losses. It is known that the losses of deep-etched/strip waveguide bends increase inevitably for decreasing radius. Here, we theoretically and experimentally demonstrate that this result is not directly applicable to shallow-etched/rib waveguide bends. Indeed, we show that the total losses caused by the bends reach a local minimum value for a certain range of compact radii and rib waveguide dimensions. Specifically, we predicted the minimum intrinsic losses < 0.1 dB/90 degrees turn within the range of 25-30 mu m bend radii in a 220 nm-thick and 400 nm-wide silicon rib waveguide with 70 nm etching depth. This unexpected outcome, confirmed by experimental evidence, is due to the opposite evolution of radiation (bending) losses and losses caused by the coupling to lateral slab modes (slab leakage) as a function of the bend radius, hence creating an optimum loss region. This result may have important implications for the design of compact and low-loss silicon nanophotonic devices., This work was supported in part by the European STREP Program under Grant FP7-ICT-2013-11-619456-SITOGA and Grant FP7-ICT-2012-10-318240 PhoxTroT and in part by LEOMIS under Grant TEC2012-38540. (Corresponding author: Regis Orobtchouk.)

Published
2016
Full Text
View/download PDF

20. Controlled Multi-Wavelength Emission in Full CMOS Compatible Micro-Lasers for on Chip Interconnections

Author

Regis Orobtchouk, J-M. Fedeli, Pierre Viktorovitch, Xavier Letartre, Nicolas Olivier, Pedro Rojo Romeo, Lydie Ferrier, and Fabien Mandorlo

Subjects
mode hopping, Materials science, Physics::Optics, Coupled mode theory, Waveguide (optics), law.invention, Resonator, Optics, law, on-chip optical interconnections, Photonic crystal, Coupling, Multi-mode optical fiber, business.industry, CMOS, wavelength control, Laser, Atomic and Molecular Physics, and Optics, laser, microdisk, Optoelectronics, business, heterogeneous integration, photonic crystal, multimode emission
Abstract

We report on a system to control the emitted wavelength of a laser independently from its pump conditions. To illustrate the concept, it is applied to III-V microdisk lasers fabricated on a CMOS pilot line for application to multicolored optical interconnections. Two different control systems are experimentally studied. The first one requires two coupling areas between the resonator and its coupled waveguide while the second solution is based on a photonic crystal mirror and a single coupling area. In both cases, the independent tuning of their emission from the pump conditions is demonstrated with a very high compacity. A controlled multimode emission in microdisk lasers is obtained for the first time.

Published
2012
Full Text
View/download PDF

21. Compact Integration of Optical Sources and Detectors on SOI for Optical Interconnects Fabricated in a 200 mm CMOS Pilot Line

Author

Thijs Spuesens, Fabien Mandorlo, P. Regreny, J-M Fédéli, D. Van Thourhout, N. Olivier, and Pedro Rojo-Romeo

Subjects
Technology and Engineering, Materials science, Physics::Instrumentation and Detectors, optical interconnect, INP, microdisk laser (MDL), SILICON EVANESCENT LASER, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Physics::Optics, Silicon on insulator, Photodetector, Waveguide (optics), WAVE-GUIDE CIRCUIT, Computer Science::Hardware Architecture, Optics, Hardware_INTEGRATEDCIRCUITS, HIGH-SPEED, SI, CHIP, waveguide detector, business.industry, Heterogeneous integration, Photonic integrated circuit, Detector, Optical interconnect, Chip, Atomic and Molecular Physics, and Optics, ROOM-TEMPERATURE, CMOS, photonic integration, MICRODISK LASERS, Optoelectronics, silicon-on-insulator (SOI), business
Abstract

As the demand for bandwidth increases, optical interconnects are coming closer and closer to the chip. Optical interconnects on silicon-on-insulator (SOI) are desirable as this allows for integration with CMOS and the mature processing can be used for photonic integrated circuits. A heterogeneous integration process can be used to include III-V active optical components on SOI. For dense integration compact sources and detectors are required, but they typically need different epitaxial structures to be efficient which limits the integration density. We propose to use an epitaxial structure, which contains both the layers for a laser and for a detector, hereby enabling very compact integration of sources and detectors. Microdisk lasers and waveguide detectors using this epi were completely fabricated in a 200 mm CMOS pilot line and the results are discussed here.

Published
2012
Full Text
View/download PDF

22. Quasi-3D Light Confinement in Double Photonic Crystal Reflectors VCSELs for CMOS-Compatible Integration

Author

Xavier Letartre, P Viktorovitch, N Olivier, Pedro Rojo-Romeo, Badhise Ben Bakir, D Bordel, C. Seassal, P. Regreny, Corrado Sciancalepore, and J Fedeli

Subjects
Materials science, business.industry, Finite-difference time-domain method, Physics::Optics, Fano resonance, Laser, Atomic and Molecular Physics, and Optics, law.invention, Vertical-cavity surface-emitting laser, Semiconductor laser theory, Optical pumping, Optics, law, Optoelectronics, Photonics, business, Photonic crystal
Abstract

A novel architecture of one-dimensional photonic crystal membrane (PCM) reflectors embodying a heterostructure is proposed as a robust design aimed at a 3-D efficient confinement of light in single-mode polarization-controlled 1.55-μm vertical-cavity surface-emitting laser (VCSEL) microsources for heterogeneous integration on complementary metal-oxide-semiconductor (CMOS). On the basis of a theoretical approach, the paper focuses on the deep interweaving between the kinetics of light transport in the mirrors and the physical nature of the exploited Fano resonances. An example of VCSEL design for optical pumping employing heterostructure-confined photonic crystal mirrors is presented. The predicted photons kinetics along with the considerable improvement in cavity modal features owing to the enhanced mirror architecture have been confirmed by performing rigorous three-dimensional finite-difference time-domain (3-D FDTD) calculations. Finally, experimental observations of photoluminescence (PL) emission performed on first-ever fabricated devices for optical pumping show striking agreement with theoretical considerations and ab initio modelling.

Published
2011
Full Text
View/download PDF

23. Nanophotonic devices for optical interconnect

Author

Liu Liu, Fabien Mandorlo, Philippe Regreny, Gunther Roelkens, Shankar Kumar Selvaraja, Geert Morthier, Oded Raz, Christophe Kopp, Dries Van Thourhout, Rajesh Kumar, Pedro Rojo-Romeo, Laurent Grenouillet, Thijs Spuesens, Photonic Integration, Electro-Optical Communication, and Low Latency Interconnect Networks

Subjects
Fabrication, Technology and Engineering, wavelength conversion, PHOTONIC ICS, ON-CHIP, Computer science, microdisk laser (MDL), Nanophotonics, Physics::Optics, SILICON CHIP, law.invention, law, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, network-on-chip, Flip-flop, Electronic circuit, business.industry, Optical interconnect, Detector, RING LASERS, process uniformity, HETEROGENEOUS INTEGRATION, ULTRA-COMPACT, Atomic and Molecular Physics, and Optics, INSULATOR WAVE-GUIDE, Network on a chip, MODULATORS, photonic integration, LOW-POWER, Optoelectronics, MICRODISK LASERS, Routing (electronic design automation), business, silicon-on-insulator (SOI)
Abstract

We review recent progress in nanophotonic devices for compact optical interconnect networks. We focus on microdisk-laser-based transmitters and discuss improved design and advanced functionality including all-optical wavelength conversion and flip-flops. Next we discuss the fabrication uniformity of the passive routing circuits and their thermal tuning. Finally, we discuss the performance of a wavelength selective detector.

Published
2010
Full Text
View/download PDF

24. 3D harnessing of light with 2.5D photonic crystals

Author

Pierre Viktorovitch, B. Ben Bakir, Xavier Letartre, J. Louis Leclercq, Salim Boutami, J.Marc Fedeli, Christian Seassal, M. Zussy, Pedro Rojo-Romeo, and L. Di Cioccio

Subjects
Materials science, business.industry, High index, Nanophotonics, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Semiconductor laser theory, Vertical-cavity surface-emitting laser, Multilayer membrane, Optoelectronics, business, Photonic crystal, Bloch wave
Abstract

It is emphasized that two-dimensional photonic crystals (2D PC) have not only a great potential for the development of 2D nanophotonics in the inplane waveguided configuration, but that they may also open the way to other brilliant developments, with an extension to out-of-plane operation, along a 2.5D nanophotonics approach. In this 2.5D approach, a 1D–2D high index contrast lateral structuration is combined with a 1D high index contrast vertical structuration, using multilayer membrane stacks including 1D–2D photonic crystal membranes, thus resulting in so-called 2.5D PC. As a specific illustration of recent achievements along this approach, new families of VCSEL structures are presented.

Published
2009
Full Text
View/download PDF

25. Highly Integrated Optical 4$\,\times\,$4 Crossbar in Silicon-on-Insulator Technology

Author

Pedro Rojo-Romeo, W. Bogaerts, Andrzej Kazmierczak, Domenico Giannone, D. Van Thourhout, Frédéric Gaffiot, F. Dortu, and Emmanuel Drouard

Subjects
Fabrication, Materials science, business.industry, Electrical engineering, Silicon on insulator, Atomic and Molecular Physics, and Optics, law.invention, Resonator, CMOS, law, Optical cavity, Optoelectronics, Crossbar switch, business, Optical filter, Cmos compatible
Abstract

In this paper, we present the design, fabrication, and characterization of a highly integrated optical 4 x 4 crossbar based on microring resonator add-drop filters. The designed crossbar structure, as small as 50 mum x 50 mum, has been fabricated in CMOS compatible silicon on insulator technology. Finally, experimental results proving the proper operation of the fabricated crossbar structures are discussed.

Published
2009
Full Text
View/download PDF

26. Design and Optimization of Electrically Injected InP-Based Microdisk Lasers Integrated on and Coupled to a SOI Waveguide Circuit

Author

J-M. Fedeli, L. Di Cioccio, Christian Seassal, Pedro Rojo Romeo, Roeland Baets, D. Van Thourhout, Philippe Regreny, and J. Van Campenhout

Subjects
Coupling loss, Materials science, business.industry, Optical interconnect, Nanophotonics, Physics::Optics, Silicon on insulator, Laser, Waveguide (optics), Atomic and Molecular Physics, and Optics, law.invention, Semiconductor, Optics, law, business, Lasing threshold
Abstract

We have performed a numerical study involving the design and optimization of InP-based microdisk lasers integrated on and coupled to a nanophotonic silicon-on-insulator (SOI) waveguide circuit, fabricated through bonding technology. The theoretical model was tested by fitting it to the lasing characteristics obtained for fabricated devices, which we presented previously. A good fit was obtained using parameter values that are consistent with numerical simulation. To obtain optimized laser performance, the composition of the InP-based epitaxial layer structure was optimized to minimize internal optical loss for a structure compatible with efficient current injection. Specific attention was paid to a tunnel-junction based approach. Bending loss was quantified to estimate the minimum microdisk diameter. The coupling between the InP microdisk and Si waveguide was calculated as function of the bonding layer thickness, waveguide offset and waveguide width. To study the lateral injection efficiency, an equivalent electrical network was solved and the voltage-current characteristic was calculated. Based on these results, the dominant device parameters were identified, including microdisk thickness and radius, coupling loss and tunnel-junction p-type doping. These parameters were optimized to obtain maximum wall-plug efficiency, for output powers in the range 1-100 W. The results of this optimization illustrate the potential for substantial improvement in laser performance.

Published
2008
Full Text
View/download PDF

27. Photonic crystals: basic concepts and devices

Author

Xavier Letartre, Jean Louis Leclercq, Pierre Viktorovitch, Emmanuel Drouard, Michel Garrigues, Christian Seassal, and Pedro Rojo Romeo

Subjects
Physics, Wavelength, Data processing, Photon, business.industry, General Engineering, Physics::Optics, Energy Engineering and Power Technology, Optoelectronics, Photonics, business, Microphotonics, Photonic crystal
Abstract

The art of microphotonics consists in confining photons, in one or more directions, in structures having dimensions about the wavelength, and doing this for the longest possible duration. The objective is then to associate these microstructures in order to carry out a photonic integration allowing data processing in very compact systems and using low optical powers. Photonic crystals have largely showed these last years their capacity to achieve these goals. To cite this article: P. Viktorovitch et al., C. R. Physique 8 (2007).

Published
2007
Full Text
View/download PDF

28. Photonic Crystal-Based MOEMS Devices

Author

Christian Seassal, Badhise Ben Bakir, Michel Garrigues, Xavier Letartre, Pierre Viktorovitch, Philippe Regreny, Jean Louis Leclercq, Salim Boutami, and Pedro Rojo-Romeo

Subjects
Coupling, Materials science, business.industry, Physics::Optics, Atomic and Molecular Physics, and Optics, chemistry.chemical_compound, Optics, Membrane, chemistry, Stack (abstract data type), Modulation, Indium phosphide, Optoelectronics, Vertical displacement, Electrical and Electronic Engineering, business, Diffraction grating, Photonic crystal
Abstract

In this paper, a new class of microoptoelectromechanical system (MOEMS) devices combining photonic crystals (PCs) formed in in-plane waveguiding membranes (in-plane 1-D or 2-D large contrast modulation of the optical index) and a multilayer stack (1-D "vertical" modulation of the optical index) according to the so-called 2.5-D micronanophotonics approach is reported. The operation of the devices is based on the resonant coupling between radiated optical modes and slow Bloch modes waveguided in the particular membranes of the stack, which are laterally patterned to form a PC. Use of high-index contrast PC gratings result in enhanced lateral compactness of the devices. The MOEMS functionality is achieved via micromechanical subwavelength vertical displacement of some of the suspended membranes. Recent demonstrations of devices (including tunable filters and surface-emitting microsources) operating along these principles are presented

Published
2007
Full Text
View/download PDF

29. Mid-infrared integrated photonics on a SiGe platform

Author

Regis Orobtchouk, Barry Luther-Davies, Pan Ma, Cédric Blanchard, M. Sinobab, Luca Carletti, Christelle Monat, Christian Grillet, David Allioux, Sergio Nicoletti, Zhen Lin, Steven J. Madden, J. L. Leclercq, Xavier Letartre, Yi Yu, David J. Moss, S. Ortiz, Pierre Labeye, Cécile Jamois, D. Hudson, Mickael Brun, Pedro Rojo-Romeo, Pierre Viktorovitch, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Département d'Optronique (DOPT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre for Ultra-high bandwidth Devices for Optical Systems (CUDOS), Australian National University (ANU), Centre for Ultra-high-Bandwidth Devices & Optical Systems (CUDOS), The University of Sydney, Royal Melbourne Institute of Technology University (RMIT University), Marie-Curie FP7-PEOPLE-2013-CIG, European Project: 631543,EC:FP7:PEOPLE,FP7-PEOPLE-2013-CIG,MIRCOMB(2014), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Inl, Laboratoire INL UMR5270, and cmos-compatible nonlinear integrated Mid-IR frequency COMBs - MIRCOMB - - EC:FP7:PEOPLE2014-05-01 - 2018-04-30 - 631543 - VALID

Subjects
Engineering, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Computer Networks and Communications, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Mid infrared, styling, insert, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, [SPI]Engineering Sciences [physics], component, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business.industry, 021001 nanoscience & nanotechnology, formatting, style, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Photonics, 0210 nano-technology, business, Telecommunications
Abstract

JUN 28-JUL 02, 2015; International audience; The mid-infrared is of great interest for a huge range of applications such as medical and environment sensors, security, defense and astronomy. I will give a broad overview of the different activities recently launched in INL Lyon, in close collaboration with several French and Australian institutions, under the umbrella of ``Mid-IR integrated photonics” with a particular focus on novel integrated sources for the Mid-IR exploitinga nonlinearSiGe platform

Published
2015
Full Text
View/download PDF

30. Mid-IR integrated photonics for sensing applications

Author

Luca Carletti, Xavier Letartre, J.-L. Leclerc, Pierre Viktorovitch, Pedro Rojo-Romeo, Zhen Lin, Christelle Monat, Cécile Jamois, Regis Orobtchouk, Christian Grillet, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL)

Subjects
Engineering, sources, Mid-Infrared, Sensing applications, heterogeneous integration, integrated optics, nonlinear optics, silicon photonics, thermal radiation, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Computer Science Applications1707 Computer Vision and Pattern Recognition, Applied Mathematics, Electrical and Electronic Engineering, Mid infrared, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic, Optical and Magnetic Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Silicon photonics, business.industry, Wavelength range, Engineering physics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Integrated optics, Photonics, business
Abstract

8 février 2015; International audience; The mid-infrared (mid-IR, wavelength range between 2 and 10 μm) is of great interest for a huge range of applications such as medical and environment sensors, security, defense and astronomy. I will give a broad overview of the different activities recently launched in INL Lyon, in close collaboration with several French and Australian institutions, under the umbrella of “Mid-IR integrated photonics” with a particular focus on novel integrated sources for the Mid-IR including hybrid III-V semiconductors on SiGe sources, thermal sources and nonlinear sources. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Published
2015
Full Text
View/download PDF

31. Site-Selective Self-Assembly of Nano-Objects on a Planar Substrate Based on Surface Chemical Functionalization

Author

Céline Chevalier, Eliane Souteyrand, Jean-Pierre Cloarec, Yann Chevolot, Pedro Rojo Romeo, Hassan Chamas, Francisco Palazon, Abdelkader Souifi, Ali Belarouci, INL - Chimie et Nanobiotechnologies (INL - C&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Nanophotonique (INL - Photonique), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), INL - Photovoltaïque (INL - PV), INL - Dispositifs Electroniques (INL - DE), Christian Joachim, Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Université Panthéon-Assas (UP2)

Subjects
Materials science, business.industry, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, 0104 chemical sciences, [SPI]Engineering Sciences [physics], Nanolithography, Colloidal gold, Nano, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [CHIM]Chemical Sciences, Surface modification, Surface chemical, Self-assembly, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Photonics, 0210 nano-technology, business, Biosensor, ComputingMilieux_MISCELLANEOUS
Abstract

Surface chemical functionalization is a powerful tool to bridge the gap between top-down and bottom-up nanofabrication methods. By tuning their surface chemistry, we can enable whole sets of different nano-objects to be selectively deposited onto well-defined submicronic anchoring sites on macroscopic substrates. This potentially enables the development of unprecedented systems in different fields such as electronics, photonics or biosensors.

Published
2015
Full Text
View/download PDF

32. InP bonded membrane photonics components and circuits: toward 2.5 dimensional micro-nano-photonics

Author

Haroldo T. Hattori, J. Mouette, Badhise Ben Bakir, Pedro Rojo-Romeo, Jean Louis Leclercq, Pierre Viktorovitch, E. Touraille, Xavier Letartre, Christelle Monat, and Christian Seassal

Subjects
Materials science, Silicon, business.industry, chemistry.chemical_element, Substrate (electronics), Atomic and Molecular Physics, and Optics, Semiconductor laser theory, Semiconductor, chemistry, Microelectronics, Optoelectronics, Electrical and Electronic Engineering, Photonics, business, Microphotonics, Photonic crystal
Abstract

The general objective of this presentation is to demonstrate the great potential of III-V semiconductor -membrane photonic devices, with a special emphasis on InP and related materials in the prospect of new developments in the field of micro-nano-photonics. Various classes devices will be presented, which will have the communality of being based on the use of high index contrast structuration of semiconductor materials. The structuration is achieved vertically for the first class, by forming thin semiconductor membranes surrounded by low optical index material, or laterally for the second class via a two-dimensional (2-D) lateral structuration of the membranes (thus, resulting in 2-D photonic crystal (PC) structures); both structurations are also combined, according to a "2.5-dimensional" approach, which should broaden considerably the combinations of functionality beyond those presently contemplated with the two first classes. The general technological scheme of the membrane approach is fully compatible with planar technology which is widely in use in the world of silicon microelectronics and with heterogeneous integration of III-V active microphotonic devices with silicon microphotonics and microelectronics (e.g., molecular bonding of InP active membranes on silica on silicon substrate). A variety of devices will be presented, featuring micro-lasers based on 2-D PC micro-cavities as well as on 2-D Bloch modes (2-D distributed-feed-back micro-laser) for in plane and surface emission.

Published
2005
Full Text
View/download PDF

33. Modal analysis and engineering on inp-based two-dimensional photonic-crystal microlasers on a si wafer

Author

Bernard Aspar, Philippe Regreny, Xavier Letartre, Christelle Monat, J.P. Albert, Christian Seassal, Pierre Viktorovitch, Marine Le Vassor d'Yerville, David Cassagne, E. Jalaguier, Pedro Rojo-Romeo, and S. Pocas

Subjects
Materials science, Photoluminescence, business.industry, Plane wave, Condensed Matter Physics, Laser, Optical microcavity, Atomic and Molecular Physics, and Optics, law.invention, Optical pumping, Optics, law, Optoelectronics, Spontaneous emission, Wafer, Electrical and Electronic Engineering, business, Photonic crystal
Abstract

We report results on hexagonal-shaped microlasers formed from two-dimensional photonic crystals (PCs) using InP-based materials transferred and bonded onto SiO/sub 2// Si wafers. Two types of hexagonal cavities are investigated : single defect (one hole missing) cavities, so-called H1 cavities (1 /spl mu/m in diameter) and two holes missing per side H2 cavities (2 /spl mu/m in diameter). Their optical properties are analyzed using photoluminescence experiments, and plane wave method simulations have been performed for comparison. High Q modes (/spl sim/600/700) have been measured and they have been shown to enable laser effect at room temperature, under pulsed optical pumping (15% duty cycle and 25-ns pulsewidth). The study of these efficient mode characteristics gives guidance for further improvement of the operation conditions of PC lasers, such as the reduction of the threshold pumping power.

Published
2003
Full Text
View/download PDF

34. Optical coupling between a two-dimensional photonic crystal-based microcavity and single-line defect waveguide on InP membranes

Author

Christian Grillet, Xavier Letartre, Y. Dsieres, Pierre Viktorovitch, Taha Benyattou, Christian Seassal, and Pedro Rojo-Romeo

Subjects
Diffraction, Photoluminescence, Materials science, business.industry, Finite difference, Physics::Optics, Condensed Matter Physics, Polarization (waves), Optical microcavity, Waveguide (optics), Atomic and Molecular Physics, and Optics, law.invention, law, Optoelectronics, Electrical and Electronic Engineering, Luminescence, business, Photonic crystal
Abstract

We demonstrate the mutual coupling between a microcavity and a waveguide realized in a two-dimensional photonic crystal on an InP membrane. Coupling processes are evidenced by generating guided or cavity modes by photoluminescence and by measuring locally the diffraction losses. Depending on the transfer and loss dynamics, different coupling processes are found. Finite difference time-domain simulations and additional polarization resolved luminescence measurements are performed in order to further investigate the coupling procedure.

Published
2002
Full Text
View/download PDF

35. Coupling of quantum dots with a photon cage

Author

Romain Peretti, Guillaume Beaudin, Chérif Belacel, Rémy Artinyan, Pedro Rojo-Romeo, Jean-Louis Leclercq, B Gonzalez-Acevedo, Ségolène Callard, Alice Berthelot, Xavier Letartre, Aziz Benamrouche, Vincent Aimez, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Institut Lumière Matière [Villeurbanne] (ILM), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Photon, Silicon, business.industry, chemistry.chemical_element, Scanning gate microscopy, Purcell effect, Condensed Matter::Materials Science, chemistry, Quantum dot, Electro-absorption modulator, Optoelectronics, Near-field scanning optical microscope, Spectroscopy, business
Abstract

International audience; We report on the investigation of the coupling between the high-Q mode of a tri-dimensional hollow silicon-based micro-resonator and PbS quantum dots in the near-infrared range, using near-field scanning optical microscopy and far-field spectroscopy.

Published
2014
Full Text
View/download PDF

36. Optical characterization of active photon cages

Author

Guillaume Beaudin, Vincent Aimez, Xavier Letartre, Romain Peretti, Cherif Belacel, Marina Kozubova, Aziz Benamrouche, Anne-Marie Jurdyc, Alice Berthelot, Ségolène Callard, Rémy Artinyan, Jean-Louis Leclercq, Pedro Rojo-Romeo, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Institut Lumière Matière [Villeurbanne] (ILM), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
Mode volume, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Photon, Materials science, Photoluminescence, business.industry, FOS: Physical sciences, Physics::Optics, 7. Clean energy, Electromagnetic radiation, Resonator, Quantum dot, Optoelectronics, Photonics, business, Optics (physics.optics), Physics - Optics, Photonic crystal
Abstract

International audience; Recently, we developed a new family of 3D photonic hollow resonators which theoretically allow tight confinement of light in a fluid (gaz or liquid): the photon cages. These new resonators could be ideal for sensing applications since they not only localize the electromagnetic energy in a small mode volume but also enforce maximal overlap between this localized field and the environment (i.e. a potential volume of nano-particles). In this work, we will present numerical and experimental studies of the interaction of a photon cage optical mode with nano-emitters. For this, PbS quantum dot emitters in a PDMS host matrix have been introduced in photon cages designed to have optimal confinement properties when containing a PDMS-based active medium. Photoluminescence measurements have been performed and the presence of quantum dot emitters in the photon cages has been demonstrated.

Published
2014
Full Text
View/download PDF

37. Characterisation of 2D photonic crystals cavities on InP membranes

Author

David Cassagne, Pierre Viktorovitch, Xavier Letartre, M. Le Vassor d'Yerville, Pedro Rojo-Romeo, Christian Grillet, P. Pottier, and Christian Seassal

Subjects
Coupling, Diffraction, Photoluminescence, business.industry, Chemistry, Photonic integrated circuit, Physics::Optics, Condensed Matter Physics, Optical microcavity, Electronic, Optical and Magnetic Materials, law.invention, Magnetic field, Membrane, Optics, law, business, Instrumentation, Photonic crystal
Abstract

We report on characterisation of optical modes in InP microcavities formed by two-dimensional (2D) photonic crystals (PC) on a suspended membrane. Diffracted photoluminescence (PL) experiments and numerical calculations are associated in order to analyse the properties of PC microresonators and waveguides and to investigate the coupling between these two building blocks of PC based photonic integrated circuits.

Published
2001
Full Text
View/download PDF

38. Electroluminescence Characterization of Cubic Gallium Nitride p–n Junctions Grown on SiC/Si Substrates by MBE

Author

Catherine Bru-Chevallier, Pedro Rojo-Romeo, H. Gamez-Cuatzin, A. Philippe, Guy Feuillet, Gérard Guillot, Bruno Daudin, E. Martinez-Guerrero, A. Souifi, J. Tardy, P. Aboughé-Nzé, and Yves Monteil

Subjects
Materials science, Silicon, business.industry, chemistry.chemical_element, Gallium nitride, Substrate (electronics), Chemical vapor deposition, Nitride, Electroluminescence, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Silicon carbide, Optoelectronics, business, Molecular beam epitaxy
Abstract

The electroluminescence (EL) properties of prospective cubic gallium nitride p–n junctions grown by molecular beam epitaxy (MBE) are studied. The samples were deposited on a 3 μm thick silicon carbide layer grown by chemical vapor deposition (CVD) on an n+ silicon substrate. At room temperature, visible and UV electroluminescence are obtained for V = 2.5 V under dc conditions. At low temperatures only UV luminescence is observed. This low temperature luminescence is mostly given by shallow donor–acceptor and band edge transitions. The activation at increasing temperatures of a visible green-blue electroluminescent band could be explained by the thermal activation of Mg deep states. Our results indicate that the MBE cubic gallium nitride material is a promising alternative for the fabrication of light emitters on silicon compatible substrates.

Published
1999
Full Text
View/download PDF

39. A Compact SOI-Integrated Multiwavelength Laser Source Based on Cascaded InP Microdisks

Author

Roel Baets, L. Di Cioccio, Philippe Regreny, J. Van Campenhout, Pedro Rojo Romeo, D. Van Thourhout, Christian Seassal, J-M. Fedeli, and Liu Liu

Subjects
Materials science, Threshold current, Silicon photonics, business.industry, Laser source, Slope efficiency, Silicon on insulator, 02 engineering and technology, Laser, 01 natural sciences, 7. Clean energy, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, 010309 optics, Wavelength, 020210 optoelectronics & photonics, Optics, law, 0103 physical sciences, Thermal, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Electrical and Electronic Engineering, business
Abstract

We report on the performance of a compact multi- wavelength laser (MWL) source heterogeneously integrated with and coupled to a silicon-on-insulator (SOI) waveguide circuit. The MWL consists of four InP-based microdisk lasers, coupled to a common SOI wire waveguide. The microdisk lasers operate in continuous-wave regime at room temperature, with a threshold current around 0.9 mA and a waveguide-coupled slope efficiency of up to 8 muW/mA, for a microdisk diameter of 7.5 mum. The output spectrum contains four laser peaks uniformly distributed within the free-spectral range of a single microdisk. While thermal crosstalk is negligible, laser peak output powers vary up to 8 dB for equal microdisk drive currents, as a result of loss due to coupling with higher order modes supported by the 1-mum-thick microdisks. This nonuniformity could be eliminated by reducing the microdisk thickness.

Published
2008
Full Text
View/download PDF

40. Broadband and compact 2-D photonic crystal reflectors with controllable polarization dependence

Author

Pierre Viktorovitch, Badhise Ben Bakir, Christian Seassal, Pedro Rojo-Romeo, Michel Garrigues, Haroldo T. Hattori, Jean Louis Leclercq, Salim Boutami, and Xavier Letartre

Subjects
Materials science, Computer simulation, business.industry, Transmitter, Photonic integrated circuit, Physics::Optics, Stopband, Polarization (waves), Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Optics, Broadband, Optoelectronics, Group velocity, Electrical and Electronic Engineering, business, Photonic crystal
Abstract

Two-dimensional (2-D) compact photonic crystal reflectors on suspended InP membranes were studied under normal incidence. We report the first experimental demonstration of 2-D broadband reflectors (experimental stopband superior to 200 nm, theoretical stopband of 350 nm). They are based on the coupling of free space waves with two slow Bloch modes of the crystal. Moreover, they present a very strong sensitivity of the polarization dependence, when modifying their geometry. A compact (50/spl times/50 /spl mu/m/sup 2/) demonstrator was realized and characterized, behaving either as a broadband reflector or as a broadband transmitter, depending on the polarization of the incident wave. Experimental results are in good agreement with numerical simulations.

Published
2006
Full Text
View/download PDF

41. Heterogeneous integration of microdisk lasers on silicon strip waveguides for optical interconnects

Author

J-M. Fedeli, Loubna El Melhaoui, Christian Seassal, Pierre Viktorovitch, Xavier Letartre, L. Di Cioccio, E. Touraille, Pedro Rojo-Romeo, Haroldo T. Hattori, G. Hollinger, and M. Zussy

Subjects
Materials science, Silicon, business.industry, Optical link, Silicon on insulator, chemistry.chemical_element, Photodetector, Laser, Waveguide (optics), Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Semiconductor laser theory, Optical pumping, chemistry, law, Optoelectronics, Electrical and Electronic Engineering, business
Abstract

A new approach is proposed to realize an optical link for intrachip optical interconnects. This link includes III-V compound-based laser sources and photodetectors, and silicon-on-insulator-based strip waveguides. The heterogeneous integration of an InP-based microdisk laser with a silicon waveguide using SiO/sub 2/-SiO/sub 2/ molecular bonding and nanofabrication procedures is emphasized. The technological procedure is described and first experimental results show that, with an adequate configuration, 35% of light could be coupled from the optically pumped microlaser to the waveguide, as a result of the vertical evanescent coupling.

Published
2006
Full Text
View/download PDF

42. Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of schottky diodes

Author

Pierre Viktorovitch, Xavier Letartre, Charles Mevaa, and Pedro Rojo-Romeo

Subjects
Materials science, business.industry, Schottky barrier, Schottky diode, Atmospheric temperature range, Low frequency, Condensed Matter Physics, Metal–semiconductor junction, Electronic, Optical and Magnetic Materials, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Noise (radio), Quantum tunnelling, Molecular beam epitaxy
Abstract

The electrical characteristics of Schottky diodes fabricated on AlInAs layers grown on InP (100) substrates by molecular beam epitaxy in the temperature range 300 to 550°C were investigated by means of current-voltage and low frequency noise (LFN) measurements. Owing to the presence of deep level impurities in the layers, the decrease of the effective Schottky barrier height with measurement temperature below 160 K can be described by a two-step defect-assisted tunnelling process. The observed low frequency 1 f α (1 noise is attributed to the modulation of the Schottky barrier height arising from fluctuations in the occupancy of deep traps distributed within the AlInAs layers. From temperature dependent LFN measurements, we have identified two deep electron traps labelled L2 and L3, located respectively at 0.4 ± 0.1 eV and 0.66 ± 0.06 eV below the conduction band minimum.

Published
1997
Full Text
View/download PDF

43. Design, simulation, and characterization of a passive optical add-drop filter in silicon-on-insulator technology

Author

Pedro Rojo-Romeo, Xavier Letartre, Pascal Bontoux, Andrzej Kazmierczak, Frédéric Gaffiot, Emmanuel Drouard, Regis Orobtchouk, Ian O'Connor, Taha Benyattou, and M. Briere

Subjects
Materials science, business.industry, Drop (liquid), Physics::Optics, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, Coupled mode theory, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Characterization (materials science), Resonator, Optics, Filter (video), Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, Routing (electronic design automation), Optical filter, business
Abstract

We present a passive novel optical add-drop filter incorporating microdisk resonators, in complementary metal-oxide-semiconductor compatible silicon-on-insulator technology, which enables a simple layout of complex optical networks-on-chip. The measured properties of the fabricated devices are in agreement with theory, established using the time-domain coupled mode theory and finite-difference time-domain simulations.

Published
2005
Full Text
View/download PDF

44. Experimental characterization of hydrogenated amorphous silicon photonic crystal waveguides

Author

Taha Benyattou, Christelle Monat, Xavier Letartre, Regis Orobtchouk, Luca Carletti, J-M. Fedeli, Christian Grillet, and Pedro Rojo-Romeo

Subjects
Amorphous silicon, Materials science, Kerr effect, Silicon photonics, Hybrid silicon laser, business.industry, Photonic integrated circuit, chemistry.chemical_compound, chemistry, Optoelectronics, Crystalline silicon, Electrical and Electronic Engineering, Photonics, business, Photonic crystal
Abstract

Summary form only given. Photonic crystal (PhC) slab waveguides are very compact structures that are able to tightly confine light. This property makes them fundamental in the conception of highly integrated photonic devices. In our work we report the first experimental results, to our knowledge, of PhC waveguides fabricated using the hydrogenated amorphous silicon (a-Si:H) platform. From recent investigations, a-Si:H has emerged as a possible new material platform for nonlinear photonics [1-4]. The associated fabrication process can be fully CMOS compatible. Furthermore, a-Si:H can exhibit both high nonlinear Kerr index (n2) and low two-photon absorption (βTPA) at telecom wavelengths. Its nonlinear figure of merit (FOM=n2/ (βTPA*λ)) can be as high as 5 [4], which is critical for creating efficient nonlinear photonic devices. In comparison, crystalline silicon (c-Si) exhibit a high Kerr coefficient but its poor FOM (~0.3-0.5) prevents it from being used in some applications.

Published
2013
Full Text
View/download PDF

45. Stability and noise of PdGeAgAu ohmic contacts to InGaAsInAlAs high electron mobility transistors

Author

Pedro Rojo-Romeo, Jacques Tardy, Xavier Letartre, P. Cremillieu, and Pierre Viktorovitch

Subjects
Materials science, business.industry, Infrasound, Transistor, Contact resistance, Electrical engineering, High-electron-mobility transistor, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, law.invention, Barrier layer, law, Materials Chemistry, Optoelectronics, Thermal stability, Electrical and Electronic Engineering, business, Ohmic contact, Noise (radio)
Abstract

This paper discusses the electrical characteristics of PdGeAgAu ohmic contacts for InAlAsInGaAs HEMT structures. A comparison with different AuGe based metallizations is made. Both types of metallization appear to provide low contact resistances. The PdGe system, however, exhibited an excellent thermal stability not achieved with AuGe. No contact degradation was observed following heat treatment at 325°C for more than 100 h plus 425°C for 24 h. The beneficial effect of the Ag barrier layer is evident from the surface morphology and thermal stability of the contact. Low frequency noise measurements on ungated devices with various values of source-to-drain distance enable determination of the channel and contact contributions to the current noise. The contact noise was observed to be essentially controlled by the contact resistance, independently of the nature and process conditions of the metallization.

Published
1996
Full Text
View/download PDF

46. Low frequency noise sources in InAlAs/InGaAs MODFETs

Author

Pedro Rojo-Romeo, Michel Gendry, Jacques Tardy, Xavier Letartre, Jean Louis Leclercq, M. Oustric, and Pierre Viktorovitch

Subjects
Materials science, business.industry, Infrasound, Transistor, Heterojunction, Photon upconversion, Electronic, Optical and Magnetic Materials, Gallium arsenide, law.invention, chemistry.chemical_compound, chemistry, law, Lattice (order), Optoelectronics, Electrical and Electronic Engineering, business, Ohmic contact, Voltage
Abstract

Detailed analysis of the 1/f low-frequency noise (LFN) in In/sub 0.52/Al/sub 0.48/As/InGaAs MODFET structures is performed, for low drain bias (below pinch-off voltage), in order to identify the physical origin and the location of the noise sources responsible for drain current fluctuations in the frequency range 0.1 Hz-10/sup 5/ Hz. Experimental data were analyzed with the support of a general modeling of the 1/f LFN induced by traps distributed within the different layers and interfaces which constitute the heterostructures. Comparative noise measurements are performed on a variety of structures with different barrier (InAIAs, InP) and different channel (InGaAs lattice matched to InP, strained InGaAs, InP) materials. It is concluded that the dominant low frequency noise sources of InAlAs/InGaAs MODFET transistors in the ON state are generated by deep traps distributed within the "bulk" InAlAs barrier and buffer layers. For reverse gate bias, the gate current appears to be the dominant contribution to the channel LFN, whereas both the gate current and the drain and source ohmic contacts are the dominant sources of noise when the device is biased strongly in the ON state. Heterojunction FET's on InP substrate with InP barrier and buffer layers show significantly lower LFN and appear to be more suitable for applications such as nonlinear circuits that have noise upconversion.

Published
1996
Full Text
View/download PDF

47. Low loss single line photonic crystal waveguide on InP membrane

Author

Pierre Viktorovitch, Christian Grillet, Xavier Letartre, Christian Seassal, O Deahese, N. Bertru, A. Le Corre, J.P. Albert, David Cassagne, M. Le Vassor d'Yerville, and Pedro Rojo-Romeo

Subjects
Diffraction, Materials science, Photoluminescence, business.industry, Photonic integrated circuit, Physics::Optics, Condensed Matter Physics, Yablonovite, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Optics, Membrane, Photonic crystal waveguides, law, Optoelectronics, business, Nonlinear Sciences::Pattern Formation and Solitons, Waveguide, Photonic crystal
Abstract

We report on spectroscopic measurements of efficient low loss photonic crystal waveguide. Diffracted photoluminescence experiments realized on close waveguides and numerical calculations are associated to analyze propagation properties of this waveguide.

Published
2003
Full Text
View/download PDF

48. Dual-wavelength laser for THz generation by photo-mixing

Author

Pedro Rojo-Romeo, Jean-Louis Leclercq, Pierre Viktorovitch, Laurent Chusseau, Philippe Regreny, Filippo Disanto, Christian Seassal, Xavier Letartre, E. Augendre, Fabrice Philippe, Koku Kusiaku, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Arithmétique informatique (ARITH), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Míguez, Hernán R., Romanov, Sergei G., Andreani, Lucio C., and Seassal, Christian

Subjects
Materials science, Photoluminescence, Terahertz radiation, Monte Carlo method, Physics::Optics, Dual-wavelength laser, Micro-cavity, Nanophotonics and photonic crystal, THz generation, Wavelength conversion devices, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, Resonator, Optics, law, 0103 physical sciences, Spontaneous emission, Photonic crystal, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, 021001 nanoscience & nanotechnology, Laser, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Optoelectronics, 0210 nano-technology, business, Fabry–Pérot interferometer
Abstract

International audience; We present the design and the fabrication of a dual-wavelength micro-photonic resonator combining a photonic crystal membrane (PCM) and a vertical Fabry Perot (FP) cavity where the former is embedded in the latter. A strong optical coupling between a PCM Γ-point Bloch mode and a FP mode at the same frequency can be used to provide a dual-wavelength device with a frequency difference which is analysed in terms of modes overlapping. We propose and demonstrate a process flow that can be used to provide such a device. Optical reflectivity characterisation is presented for a monolithic device and photoluminescence dual-wavelength spontaneous emission is demonstrated in an extended vertical cavity. Finally the dual-mode laser emission stability is examined with numerical Monte Carlo simulation.

Published
2012
Full Text
View/download PDF

49. InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser

Author

Bernard Aspar, Xavier Letartre, David Cassagne, P. Regreny, Pierre Viktorovitch, E. Jalaguier, M. Le Vassor d'Yerville, Christian Seassal, Christelle Monat, J.P. Albert, Pedro Rojo-Romeo, and S. Pocas

Subjects
Materials science, Physics and Astronomy (miscellaneous), Silicon, business.industry, Hybrid silicon laser, Photonic integrated circuit, Physics::Optics, chemistry.chemical_element, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Laser, Yablonovite, law.invention, Optical pumping, Optics, chemistry, law, Optoelectronics, Photonics, business, Photonic crystal
Abstract

Defectless two-dimensional photonic crystal structures have been fabricated by drilling holes in a thin multi-quantum-well InP-based heterostructure transferred onto a silicon host wafer. Extremely low group velocity modes, which correspond to the predicted photonic valence band edge, have been observed for different filling factors. Under pulsed optical pumping, room temperature laser operation around 1.5 μm has been achieved on these structures with a threshold in the milliwatt range.

Published
2002
Full Text
View/download PDF

50. Dual-wavelength micro-resonator combining photonic crystal membrane and Fabry-Perot cavity

Author

Taha Benyattou, Koku Kusiaku, Xavier Letartre, Ounsi El Daif, Pierre Viktorovitch, Jean-Louis Leclercq, Christian Seassal, and Pedro Rojo-Romeo

Subjects
Coupling, Materials science, business.industry, Transfer-matrix method (optics), Finite-difference time-domain method, Physics::Optics, Coupled mode theory, Atomic and Molecular Physics, and Optics, Brillouin zone, Resonator, Optics, Optoelectronics, business, Fabry–Pérot interferometer, Photonic crystal
Abstract

We propose a novel system of dual-wavelength micro-cavity based on the coupling between a photonic crystal membrane (PCM); operating at the Γ- point of the Brillouin zone, with a Fabry-Perot vertical cavity (FP). The optical coupling, which can be adjusted by the overlap between both optical modes, leads to the generation of two hybrid modes separated by a frequency difference which can be tuned using micro-opto-electromechanical structures. The proposed dual-wavelength micro-cavity is attractive for application where dual-mode behaviour is desirable as dual-lasing, frequency conversion. An analytical model, numerical (FDTD) and transfer matrix method investigations are presented.

Published
2011

Catalog

Books, media, physical & digital resources
See catalog results