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Organic-inorganic hybrid perovskite materials have attracted tremendous attention as a key material in various optoelectronic devices. Distinctive optoelectronic properties, such as a tunable energy band position, long carrier diffusion lengths, and high charge carrier mobility, have allowed rapid progress in various perovskite-based optoelectronic devices (solar cells, photodetectors, light emitting diodes (LEDs), and lasers). Interestingly, the developments of each field are based on different characteristics of perovskite materials which are suitable for their own applications. In this review, we provide the fundamental properties of perovskite materials and categorize the usages in various optoelectronic applications. In addition, the prerequisite factors for those applications are suggested to understand the recent progress of perovskite-based optoelectronic devices and the challenges that need to be solved for commercialization.

In this study, we introduce optimization of the annealing conditions for improvement of hardness and hole transporting properties of high-molecular weight poly [9, 9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine] (TFB) film used as a Hole Transport Layer (HTL) of Quantum-dot Light-emitting Diodes (QLEDs). As annealing temperatures were increased from 120 °C to 150 °C or more, no dissolving or intermixing phenomena at the interface between HTL and Quantum-Dot Emission Layer (QDs EML) was observed. However, when the annealing temperatures was increased from 150 °C to 210 °C, the intensity of the absorbance peaks as determined by Fourier Transform Infrared (FT-IR) measurement was found to relatively decrease, and hole transporting properties were found to decrease in the measurement of current density - voltage (CD - V) and capacitance - voltage (C - V) characteristics of Hole Only Devices (HODs) due to thermal damage. At the annealing temperature of 150 °C, the QLEDs device was optimized with TFB films having good hardness and best hole transporting properties for solution processed QLEDs.

An X-ray detector system was fabricated with an organic small molecule photodetector and a terbium-doped gadolinium oxysulfide (Gd2O2S:Tb) scintillating screen. Though the microsphere cluster structure of the Gd2O2S film had advantage in low material cost, wavelength matching to the proper photodetector is challenging due to its scintillating performance property in the relatively narrow emission spectrum range. To tune the absorption spectrum of the organic photodetector to that of the emission spectrum of the Gd2O2S, a microcavity effect was applied by controlling the thickness of the C60 layer. The peak wavelength of the absorption spectrum was tuned over a broad region of wavelengths, from 461 nm to 776 nm. The fabricated X-ray detector system was demonstrated in a medical X-ray radiography system.

A thin film encapsulation layer was fabricated through two-sequential chemical vapor deposition processes for organic light emitting diodes (OLEDs). The fabrication process consists of laser assisted chemical vapor deposition (LACVD) for the first silicon nitride layer and laser assisted plasma enhanced chemical vapor deposition (LAPECVD) for the second silicon nitride layer. While SiNx thin films fabricated by LAPECVD exhibits remarkable encapsulation characteristics, OLEDs underneath the encapsulation layer risk being damaged during the plasma generation process. In order to prevent damage from the plasma, LACVD was completed prior to the LAPECVD as a buffer layer so that the laser during LACVD did not damage the devices because there was no direct irradiation to the surface. This two-step thin film encapsulation was performed sequentially in one chamber, which reduced the process steps and increased fabrication time. The encapsulation was demonstrated on green phosphorescent OLEDs with I–V-L measurements and a lifetime test. The two-step encapsulation process alleviated the damage on the devices by 19.5% in external quantum efficiency compared to the single layer fabricated by plasma enhanced chemical vapor deposition. The lifetime was increased 3.59 times compared to the device without encapsulation. The composition of the SiNx thin films was analyzed through Fourier-transform infrared spectroscopy (FTIR). While the atomic bond in the layer fabricated by LACVD was too weak to be used in encapsulation, the layer fabricated by the two-step encapsulation did not reveal a Si–O bonding peak but did show a Si–N peak with strong atomic bonding.

Optimization of ink-jet printing conditions of quantum-dot (QD) ink by cosolvent process and improvement of quantum-dot light-emitting diodes (QLEDs) characteristics assisted by vacuum annealing were analyzed in this research. A cosolvent process of hexane and ortho-dichlorobenzene (oDCB) was optimized at the ratio of 1:2, and ink-jetting properties were analyzed using the Ohnesorge number based on the parameters of viscosity and surface tension. However, we found that these cosolvents systems cause an increase in the boiling point and a decrease in the vapor pressure, which influence the annealing characteristics of the QD emission layer (EML). Therefore, we investigated QLEDs&rsquo, performance depending on the annealing condition for ink-jet printed QD EML prepared using cosolvents systems of hexane and oDCB. We enhanced the quality of QD EML and device performance of QLEDs by a vacuum annealing process, which was used to prevent exposure to moisture and oxygen and to promote effective evaporation of solvent in QD EML. As a result, the characteristics of QLEDs formed using ink-jet printed QD EML annealed under vacuum environment increased luminescence (L), current efficiency (CE), external quantum efficiency (EQE), and lifetime (LT50) by 30.51%, 33.7%, 21.70%, and 181.97%, respectively, compared to QLEDs annealed under air environment.

As the efficiency of organic solar cells has been consistently improved, interest is being raised to understand degradation mechanisms inside the solar cells. Among many factors that affect solar cell deterioration, light is the most crucial factor in the degradation mechanism. Here we report degradation under the continuous light-induced conditions for PTB7:PC70BM organic solar cells during the first 24 h with maintaining the temperature at 25 °C. It revealed 30% of initial performance drop after 24 h of light-induced aging, mostly through a decrease in JSC and FF. The morphological and electrical characteristics of the active layer and devices were investigated by atomic force microscopy, impedance spectroscopy, and temperature-dependent current density–voltage characteristics to figure out the origin of the photo-induced degradation. As a result, the light-induced traps were found to be a primary cause of loss. Furthermore, this trap formation was observed with an energy of 78 meV leading to trapped charge limited conduction properties and electrical degradation of solar cells.

In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 &deg, C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR).

We demonstrate selective laser sintering of silver (Ag) nanoparticle (NP) ink using a digital micromirror device (DMD) for the facile fabrication of 2D electrode pattern without any conventional lithographic means or scanning procedure. An arbitrary 2D pattern at the lateral size of 25 μm × 25 μm with 160 nm height is readily produced on a glass substrate by a short exposure of 532 nm Nd:YAG continuous wave laser. The resultant metal pattern exhibits low electrical resistivity of 10.8 uΩ · cm and also shows a fine edge sharpness by the virtue of low thermal conductivity of Ag NP ink. Furthermore, 10 × 10 star-shaped micropattern arrays are fabricated through a step-and-repeat scheme to ensure the potential of this process for the large-area metal pattern fabrication.

In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2 ) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS2 FETs in an enhancement mode with preservation of electrical parameters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of ≈45% of 1/2 VDD . More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS2 FETs, stably demonstrate 120 cd m-2 at the gate-to-source voltage of 5 V, exhibiting promising opportunities for future display application.

In this paper, we discuss a new High-Side nLDMOSFET whose breakdown voltage is over 100 V while meeting the thermal budget for the conventional process. The proposed n-channel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) has a feature in that the structure comprises a gap of 5 microm between the DEEP N-WELL and the center of the source, the surface of which is implanted by the NADJUST-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side nLDMOS exhibits BVdss of 126 V and R(ON,sp) of as low as 2.50 m(omega) x cm2. The NBL, which plays a significant role as a blocking layer against the punch-through seems to function as a hurdle for increasing the breakdown voltage.

We demonstrate ZnO nanowire based UV sensor by laser-induced hydrothermal growth of ZnO nanowire. By inducing a localized temperature rise using focused laser, ZnO nanowire array at~15 μm size consists of individual nanowires with~8 μm length and 200~400 nm diameter is readily synthesized on gold electrode within 30 min at the desired position. The laser-induced growth process is consecutively applied on two different points to bridge the micron gap between the electrodes. The resultant photoconductive ZnO NW interconnections display 2~3 orders increase in the current upon the UV exposure at a fixed voltage bias. It is also confirmed that the amount of photocurrent can be easily adjusted by changing the number of ZnO NW array junctions. The device exhibits clear response to the repeated UV illumination, suggesting that this process can be usefully applied for the facile fabrication of low-cost UV sensor array.

In this paper, we discuss on the optimal design of a High-Side n-channel Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOSFET) whose breakdown voltage is over 100 V with 0.35 microm Bipolar-CMOS-DMOS (BCD) process. The proposed nLDMOSFET has been fabricated and tested in order to confirm the features of a deep N+ sinker and a gap of between the drift region (DEEP N-WELL) and the center of the source. The surface is implanted by the N-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side LDMOS exhibits BVdss of 115 V and Ron,sp of as low as 2.20 m ohms cm2, which is consistent with the experimental results.

We propose a novel n-channel LDMOSFET (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) structure with a breakdown voltage over 100 V under the thermal budget for the conventional 0.35 microm BCD process. We varied the gap between the DEEP N-WELL and the center of the source for optimization and optimized the doping concentration under the surface by the N(ADJUST)-layer in an effort to obtain high breakdown voltage and simultaneously the low specific on-resistance. The fabricated samples of the proposed High-Side n-channel LDMOS structure exhibit BVdss of 120 V and the specific on-resistance of 2.40 m ohms cm2. We also observed the shift of maximum impact ionization rate from the gate region to the drain side which is considered to strengthen the breakdown characteristics. The numerical simulation revealed that the maximum impact ionization rate of the proposed structure can be reduced down to 18.61 cm(-3) s(-1), while that of the conventional structure being as high as 25.44 cm(-3) s(-1).

We propose a novel n-channel LDMOSFET (lateral double-diffused metal oxide semiconductor field effect transistor) structure with a breakdown voltage over 100 V, which was fabricated under the thermal budget of the conventional 0.35-μm industry process. We optimized the engineering parameters, such as the distance of the gap between the DEEP N-WELL and the source region, as well as the doping concentration of the NADJUST-layer, for achieving both the high breakdown voltage and the low specific on-resistance. The fabricated device exhibits a breakdown voltage (BVdss) over 110 V and a specific on-resistance as low as 2.20 mΩ·cm. The robust breakdown characteristics are due to the migration of the location wherein maximum impact ionization occurs from the gate region to the drain side. The numerical simulation revealed that the maximum impact ionization rate of the proposed structure was 2.44 × 10 cm−3s−1 while that of the conventional structure was 6.69 × 10 cm−3s−1.

In this paper, we discuss the breakdown characteristics of an LDMOSFET (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) structure for the optimization of engineering parameters such as the gap between the DEEP N-WELL and the source region and the doping concentration of the N(ADJUST)-layer. The fabricated device exhibits the breakdown voltage (BVdss) over 110 V and the specific on-resistance as low as 2.20 mOmega cm2. The robust breakdown characteristics seem to be due to the migration of the location wherein maximum impact ionization occurs from the gate region to the drain side, which was confirmed by the numerical simulation which verifies that the maximum impact ionization rate of the proposed structure is 2.44 x 10(16) cm(-3) s(-1), while that of the conventional structure being 6.69 x 10(19) cm(-3) s(-1).

We propose a novel n‐channel LDMOSFET(Lateral Double‐diffused Metal Oxide Semiconductor Field Effect Transistor) structure with a breakdown voltage over 100 V under the thermal budget for the conventional 0.35μm BCD process. We varied the gap between the DEEP N‐WELL and the center of the source for optimization and the doping concentration under the surface by the NADjusT‐layer in an effort to obtain high breakdown voltage and simultaneously the low specific on‐resistance. The proposed High‐Side n‐channel LDMOS exhibits BVdss of 110 V and the specific on‐resistance of 2.20 mΩcm2.