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We investigated the heat dissipation in heterostructure field-effect transistors (HFETs) using microRaman measurement of the temperature in active AIGaN/GaN. By varying the gate structure, the heat dissipation through the gate was clearly revealed. The temperature increased to 120 °C at the flat gate device although the inserted gate increased to only 37 °C. Our results showed that the inserted gate structure reduced the self-heating effect by three times compared to the flat gate structure. Temperature mapping using micro-Raman measurement confirmed that the temperature of the near gate area was lower than that of the near drain area. This indicated that the inserted gate electrode structure effectively prohibited self-heating effects.

A graphene-PbS quantum dot (QD) composite for application in high-performance near-infrared (NIR) photodetectors (PDs) is proposed in this study. A single-layer graphene flake and oleic acid-capped PbS QD composite is fabricated through the conventional sonication process, in hexane solution. Field emission scanning electron microscopy images of the graphene-PbS QD composite dispersed on a glass substrate confirm that the composite contains both aggregated graphene flakes and single-layer graphene with wrinkles; Transmission electron microscopy images reveal close packing with uniform size. The increased absorbance and quenched photoluminescence intensity of the graphene-PbS QD composite supports enhanced photoinduced charge transfer between graphene and the PbS QDs. Moreover, the specific Raman mode of the PbS QDs, embedded in the spectrum, is enhanced by combination with graphene, which can be interpreted by SERS as relevant to the photoinduced charge transfer between the Pbs QDs and graphene. For device application, a PD structure comprised by graphene-PbS QDs is fabricated. The photocurrent of the PD is measured using a conventional probe station with a 980-nm NIR laser diode. In the fabricated PD comprising graphene-PbS QDs, five-times higher photocurrent, 22% faster rise time, and 47% faster decay time are observed, compared to that comprising PbS QDs alone. This establishes the potential of the graphene-PbS QD composite for application in ultrathin, flexible, high-performance NIR PDs.

The fine control over the surface of lead sulfide colloidal quantum dots (PbS CQDs) is increasingly important to achieve enhanced device performance. In particular, the in-gap trap state resulting from the surface hydroxylation of PbS CQDs is considered detrimental to photovoltaic performance. In this study, we developed a method to avoid hydroxyl formation on the PbS CQD surface by using an in situ solution-phase ligand-exchange process. The complete elimination of protic solvents and other hydroxyl sources from the CQD synthesis to device fabrication produced PbS CQD films without undesired hydroxyl ligands with a reduced trap density. In this process, the purification process, which accounts for nearly 60% of the synthesis cost, is completely excluded. The presence of trap states verified through optical analysis and the hydroxylation observed via surface analysis clearly agreed with the device characterization obtained by transient photovoltage and photocurrent. Consequently, the open-circuit voltage of the PbS CQD solar cells is improved by up to 10%, yielding a certified power-conversion efficiency of 11.6%.

Solution-processed semiconductors are promising materials to realize optoelectronic devices that combine high performance with inexpensive manufacturing. In particular, the exploitation of colloidal quantum dots (CQDs) capable of harvesting infrared photons, in conjunction with visible-absorbing organic chromophores, has been demonstrated as an interesting route. Unfortunately, CQD/organic hybrid photovoltaics have been limited to power conversion efficiencies (PCEs) below 10% due to chemical mismatch and difficulties in facilitating charge collection. Here we devise a hybrid architecture that overcomes these limitations by introducing small molecules into the CQD/organic stacked structure. The small molecule complements CQD absorption and creates an exciton cascade with the host polymer, thus enabling efficient energy transfer and also promoting exciton dissociation at heterointerfaces. The resulting hybrid solar cells exhibit PCEs of 13.1% and retain over 80% of their initial PCE after 150 h of continuous operation unencapsulated, outperforming present air-processed solution-cast CQD/organic photovoltaics. Colloidal quantum dots and organics have complementary properties apt for photovoltaics, yet their combination has led to poor charge collection. Here, Baek et al. introduce small molecules that act as a bridge between quantum dots and polymers, thus improving device efficiency and stability.

Couette–Taylor flow reactor is a mixing device that offers wide range of mixing regimes within a single reactor and operates in continuous flow mode. This reactor is recently used in manufacturing the cathode material of lithium ion batteries. Here, we simulate the agglomeration process of Li(NixMnyCoz)O2 particles using computational fluid dynamics. Quadrature method of moments is implemented for modeling of aggregation and breakage in Couette-Taylor flow reactor. We conduct an experiment of the preparation of Li(NixMnyCoz)O2 precursors, and the experimental data are compared with simulated results for the validation of numerical model. The predicted evolutions of mean particle size are well agreed with experimental data. For the practical application, we investigate the effects of density ratio of particle to fluid and initial volume fraction of particles on the particle size. The results show that the particle diameter increases with increasing of density ratio, but it decreases with increasing of initial volume fraction of particles. On the other hand, the particle sizes become similar at high rotational speed.

The most common cause of antibiotic-associated diarrhea is Clostridium difficile infection (CDI). Recurrent C. difficile infection (rCDI) often occurs after successful treatment of CDI. Due to the increased incidence and the difficulty in treating rCDI, it is becoming an important clinical issue. Identifying risk factors is helpful for early detection, treatment, and prevention of rCDI. Advanced age, use of antibiotics, gastric acid suppression, and infection with a hypervirulent strain are currently regarded as the major risk factors for rCDI. Several treatment modalities, including vancomycin, fidaxomicin, and fecal microbiota transplant (FMT), are suggested for rCDI treatment. However, there is currently no definitive treatment method with sufficient evidence for rCDI. Recent studies have focused on FMT and have shown positive results for rCDI. Prevention of rCDI by measures such as hand washing and isolation of patients is very important. However, these preventive measures are often overlooked in clinical practice. Here, we review the risk factors, treatment, and prevention of rCDI. (Gut Liver 2019;13:16-24)

We introduce indium arsenide colloidal quantum dot films for photovoltaic devices, fabricated by two-step surface modification. Native ligands and unwanted oxides on the surface are peeled off followed by passivating with incoming atomic or short ligands. The near-infrared-absorbing n-type indium arsenide colloidal quantum dot films can be tuned in energy-level positions up to 0.4 eV depending on the surface chemistry, and consequently, they boost collection efficiency when used in various emerging solar cells. As an example, we demonstrate p–n junction between n-type indium arsenide and p-type lead sulfide colloidal quantum dot layers, which leads to a favorable electronic band alignment and charge extraction from both colloidal quantum dot layers. A certified power conversion efficiency of 7.92% is achieved without additionally supporting carrier transport layers. This study provides richer materials to explore for high-efficiency emerging photovoltaics and will broaden research interest for various optoelectronic applications using the n-type covalent nanocrystal arrays., Existing n-type colloidal quantum dot materials easily lose their doping polarity in air. Here Song et al. passivate the reactive covalent surface of indium arsenide quantum dots to gain the energy-level tunability and show p–n junction type solar cells with 7.92% certified efficiency.

We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent (F-D) capacitance-voltage (C-V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage (V th ). A drastic voltage shift in the C-V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V th with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.

We have investigated poly (3-hexylthiophene) (P3HT) as a hole transport material interfacing PbS quantum dot and anode, and found that carrier separation is enhanced by increasing carrier concentration and mobility of P3HT. In addition, the ambient stability of PbS colloidal quantum dot solar cells are shown to be improved by surface oxidation of P3HT. Comparing with MoO3 anode interfacing material, P3HT performs better with controllable ambient stability. Electrode interfacing material should enable appropriate internal force for efficient carrier separation and enough carrier mobility to minimize carrier losses, which needs to provide a surface stabilization strategy to prevent degradation induced by ambient oxidation.

Accurately predicting the peak wavelength and intensity of the electroluminescence spectrum through the photoluminescence method which can be measured without connecting electrodes is not only practically important for the development of micro-LEDs that cannot be fully inspected for device development, but there is also a fundamental importance in understanding the light emitting mechanism of the LEDs. In this study, the correlation and detailed mechanism between PL and EL are systematically analyzed by considering the effects of carrier escape, carrier accumulation, applied bias, leakage current, incident light wavelength and light absorption in order to provide a clear path for all-optical inspection of light emitting diodes and complete understanding of the luminescence mechanism in GaN-related quantum wells.

Organic-inorganic hybrid photovoltaics (PVs) have recently attracted considerable attention as their PV performance has rapidly improved. Abnormal current-voltage (I-V) characteristics or I-V hysteresis, however, were occasionally observed in such systems that hampered the development of the PV technology. Here we study the hysteresis of organic-inorganic hybrid colloidal quantum dot (CQD) PVs by analyzing I-V characteristics upon systematic modulation of organic components of CQDs. We demonstrate that an external bias stress to CQD films transiently prompts redistribution of mobile ions, particularly protons of surface ligands, thus leading to the formation of a transient space-charge region in the CQD films. The variable space-charge region causes I-V hysteresis and photoinstability of CQD PVs, which is closely correlated with the transient behavior of mobile ions. Our findings here could provide significant implications to the understanding of the influence of mobile ions on I-V hysteresis in other organic-inorganic hybrid PVs such as perovskites.

We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.

We fabricated a hole transport layer (HTL) using transfer printing to fabricate high efficiency PbS quantum dot solar cell with minimized hysteresis. We applied PbS-EDT(1,2-ethanedithiol) as an HTL and controlled the adhesive properties between the donor substrate and the HTL through the UVO process in order to effectively transfer the HTL to the PbS layer, which enabled multilayer transfer printing as a result. During the transfer printing process, a gradient solid-solution layer was created at the interface with the existing PbS layer to reduce the hysteresis phenomenon, and to improve the power conversion efficiency to about 10% according to the HTL thickness optimization. In addition, the use of the EDT solvent can be remarkably reduced by using the transfer printing when forming the PbS-EDT layer. This can reduce the amount of organic solvent consumed in the process and improve the potential of environmentally friendly processes.

In this report, we explore the underlying mechanisms by which doped organic thin films as a top hole-selective layer (HSL) improve the performance and stability of colloidal quantum dot (CQD)-based solar cells. Molecular dynamics-based theoretical studies prove that the hydro/oxo-phobic properties of the HSL serve to efficiently passivate the CQD solid. Furthermore, the robust and outstanding electrical properties of the HSL, simultaneously ensure a high power conversion efficiency (PCE) and increase the stability performance of CQD-based solar cells. As a result, a best PCE of 11.7% in a lead sulfide (PbS)-based CQD solar cell is achieved and over 90% of the initial performance is retained after 1 year storage under ambient conditions.

We investigated the properties of flexible InGaN LEDs fabricated on a 2-in. polyimide substrate with various radii of curvature R . The output power of the LEDs slightly increased as R decreased for a given input current. The output power decreased and surface cracks appeared in the curved devices at currents larger than a critical current, although this current was smaller for devices with a smaller R . Reverse-biased electro-reflectance spectroscopy revealed that both the compressive strain in the InGaN layers and the related piezoelectric field increased as R decreased.

We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with chemical-bath deposited (CBD) ZnS buffer layers with different deposition times. The conversion efficiency and the fill factor of the CIGS solar cells reveal a strong dependence on the deposition time of CBD-ZnS films. In order to understand the detailed relationship between the heterojunction structure and the electronic properties of CIGS solar cells with different deposition times of CBD-ZnS films, capacitance–voltage (C–V) profiling measurements with additional laser illumination were performed. The light-soaking effects on CIGS solar cells with a CBD-ZnS buffer layer were investigated in detail using current density–voltage (J–V) and C–V measurements with several different lasers with different emission wavelengths. After light-soaking, the conversion efficiency changed significantly and the double diode feature in J–V curves disappeared. We explain that the major reason for the improvement of efficiency by light-soaking is due to the fact that negatively charged and highly defective vacancies in the CIGS absorber near the interface of CBD-ZnS/CIGS were formed and became neutral due to carriers generated by ultra-violet absorption in the buffer layer.

Using a combination of quantum dots (QDs) of different sizes, and thus different bandgaps, to extend the light-harvesting spectrum of a photovoltaic device in tandem architecture is a promising strategy for increasing the solar cell efficiency. In this study, we propose a new architecture for a solar cell device consisting of a graded-bandgap active layer made of lead sulfide QDs of different sizes and based on the structure of the Schottky junction. Colloidal PbS QDs with bandgaps of 1.55, 1.44, and 1.36 eV were synthesized and used to construct a series of Schottky junction solar cells. Cells with a graded-bandgap active layer exhibited an increase in short-circuit current density (Jsc) but yielded lower open-circuit voltage (Voc) compared with cells having a uniform bandgap. We found that adding a thin electron energy-boosting layer (EEB) made from 1.55-eV-bandgap QDs can partially compensate for the thermalization loss, and thus enhance Jsc and recover Voc. Consequently, this study provides a conceptual basis for further improvement in colloidal QD-based solar cells.

The effect of electron blocking layer (EBL) on the injection and radiative efficiencies in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) was investigated. In order to identify the dominant mechanism, we measured the external quantum efficiency (EQE), radiative efficiency (RE) and carrier injection efficiency (CIE) experimentally. Through these methods, the origin of efficiency droop and the effect of the EBL were clarified. In addition, the RE and the CIE can be separated quantitatively through our analysis. The insertion of the EBL does reduce the carrier leakage but the RE is also reduced by the insertion, which results in not a significant change in the EQE. The measured piezoelectric field of the QWs significantly increased by the insertion of the EBL, which implies that the insertion of AlGaN layer make a strong effect on the QW strain.

We analyzed the current-crowding process and its effects on carrier spill-over and light outputpower loss in InGaN/GaN blue-light-emitting diodes. When the current density was measured to be 3.1 times larger, the carrier spill-over was observed to be 1.9 times higher. The effects of current crowding on the loss of efficiency and on carrier spill-over were determined quantitatively. Through this analysis, we were able to correlate the degree of current crowding with the loss rate of lightoutput power. When the injected current was increased 2.5 times, the current-spreading length decreased 1.2 times, and the loss rate of the light-output power increased from 5% to 12%.

The PbS quantum dot is an emerging photovoltaic material, which may provide high efficiency breakthroughs. The most crucial element for the high efficiency solar cells's development is to understand charge transport characteristics of PbS quantum dot solids, which are also important in planning strategic research. We have investigated charge transport characteristics of PbS quantum dot solids thin films using space charge limited conduction analysis and assessed thickness dependent photovoltaic performances. The extracted carrier drift mobility was $low-10^{-2}cm^2/Vs$ with the estimated diffusion length about 50 nm. These and recently reported values were compared with those from a commercial photovoltaic material, and we present an essential element in further development of PbS quantum dot solids materials.

Typically, three kinds of ZnO nanostructures, nanowires, nanosheets, and nanorods, are synthesized by changing the reactor pressure in the chemical vapor transport method. The photoelectrochemical (PEC) properties of ZnO nanostructures were investigated by using an ultraviolet lamp with a wavelength of 365 nm and a measured intensity of 0.4 mW/cm22. Photocurrent densities of 0.61, 0.47, and 0.37 mA/cm2 were obtained for nanowires, nanosheets, and nanorods, respectively. The photoconversion efficiencies of these ZnO nanostructures under ultraviolet illumination were calculated as 73.1, 57.3, and 41.8%, respectively. The different PEC results were explained by using the effects of dimension in the nanostructures. The separation of light-induced charge formed near the surface, leading to the transfer of electron holes toward the surface and electrons toward the bulk at the photo-anode, will be higher as the dimension is decreased. The difference in the optical absorption in the PEC process could be neglected because the absorption intensities were nearly the same for the three kinds of samples, independent of both the morphology and the density. Therefore, the different PEC efficiencies could be thought to be a result of the difference in the nanostructures with different dimensions, not the result of the density of the nanostructure.

We report on the structural and optical properties of non polar a-plane MgxZn1−xO (0 ⩽ x ⩽ 0.57) films on r-plane sapphire substrates grown by plasma-assisted molecular beam epitaxy. Reflection high energy electron diffraction (RHEED) revealed a formation of cubic MgO phase when an Mg concentration increases. Room temperature (RT) photoluminescence (PL) and transmission electron microscopy consistently revealed the formation of cubic MgO phase from the Mg0.21Zn0.79O film. The Mg0.11Zn0.89O film showed a band edge emission at ∼360 nm, which is a shorter wavelength than the ZnO (∼373 nm), from the RT PL measurements. Photoluminescence excitation (PLE) measurements at RT showed that band-gap energies of MgxZn1−xO films could be tuned up to ∼4.65 eV (∼270 nm) although cubic MgO phase were mixed for high Mg concentration. For the single phase wurtzite MgZnO film, band-gap energy of 3.48 eV was obtained from the Mg0.11Zn0.89O film.

A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm(2), exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm(2) unit cell). Our approach affords trade-offs between power and the active area of the photovoltaic devices, which results in a low-cost power source, and which is scalable to larger areas.

Bandgap tunability and broadband absorption make quantum-dot (QD) photovoltaic cells (PVs) a promising candidate for future solar energy conversion systems. Approaches to improving the electrical properties of the active layer increase efficiency in part. The present study focuses on optical room for enhancement in QD PVs over wide spectrum in the near-infrared (NIR) region. We find that ray-optical light trapping schemes rather than the nanophotonics approach may be the best solution for enhancing broadband QD PVs by suppressing the escape probability of internal photons without spectral dependency. Based on the theoretical study of diverse schemes for various bandgaps, we apply a V-groove structure and a V-groove textured compound parabolic trapper (VCPT) to PbS-based QD PVs along with the measurement issues for PVs with a light scattering layer. The efficiency of the best device is improved from 10.3% to 11.0% (certified to 10.8%) by a V-groove structure despite the possibility of underestimation caused by light scattering in small-area devices (aperture area: 0.0625 cm2). By minimizing such underestimation, even greater enhancements of 13.6% and 15.6% in short circuit current are demonstrated for finger-type devices (0.167 cm2 without aperture) and large-area devices (2.10 cm2 with an aperture of 0.350 cm2), respectively, using VCPT.

Colloidal quantum dots (CQDs) have attracted attention as a next-generation of photovoltaics (PVs) capable of a tunable band gap and low-cost solution process. Understanding and controlling the surface of CQDs lead to the significant development in the performance of CQD PVs. Here we review recent progress in the realization of low-cost, efficient lead chalcogenide CQD PVs based on the surface investigation of CQDs. We focus on improving the electrical properties and air stability of the CQD achieved by material approaches and growing the power conversion efficiency (PCE) of the CQD PV obtained by structural approaches. Finally, we summarize the manners to improve the PCE of CQD PVs through optical design. The various issues mentioned in this review may provide insight into the commercialization of CQD PVs in the near future.

We observed large enhancement of capacitance with strong voltage sensitivity in InGaN/GaN multiple quantum wells with additional laser illuminations. We have found that the observed negative differential capacitance and its related capacitance peaks in the capacitance-voltage profile are due to the photogenerated charge separation and accumulation at the well/barrier interfaces and its subsequent carrier escape by the applied forward bias. By analyzing temperature dependent photocurrent spectra simultaneously, it is shown that photocarrier separation and strong carrier escape simultaneously occur in an individual quantum well. We can analyze the contribution of a single individual quantum well to the total capacitance of the device, resulting from the nanometer scale carrier separation and accumulation, and clarify the detailed process of accumulation and escape of carriers in the respective quantum wells.We observed large enhancement of capacitance with strong voltage sensitivity in InGaN/GaN multiple quantum wells with additional laser illuminations. We have found that the observed negative differential capacitance and its related capacitance peaks in the capacitance-voltage profile are due to the photogenerated charge separation and accumulation at the well/barrier interfaces and its subsequent carrier escape by the applied forward bias. By analyzing temperature dependent photocurrent spectra simultaneously, it is shown that photocarrier separation and strong carrier escape simultaneously occur in an individual quantum well. We can analyze the contribution of a single individual quantum well to the total capacitance of the device, resulting from the nanometer scale carrier separation and accumulation, and clarify the detailed process of accumulation and escape of carriers in the respective quantum wells.

We have carried out surface-plasmon enhanced Raman spectroscopy (SERS) on 30 nm-thick GaN samples grown at various temperatures, in order to investigate the properties of ultra thin GaN films on sapphire. We found that the properties, such as the strain and the free-carrier density of the thin layers, were sensitively affected by the growth temperatures. Our results show that SERS, by selectively enhancing the Raman signal near the surface, can be a very useful technique to investigate the optical properties of ultra-thin GaN films and their initial growth mode.

We introduce a novel colloidal quantum dot solar cell (CQD SC) architecture, defined as inverted Schottky CQD SCs, which consists of a thin film of PbS CQDs sandwiched between a low-work-function, transparent conducting oxide (Lϕ-TCO) and a high-work-function metal anode. On Lϕ-TCO substrates, which were generated by coating a thin layer of polyethylenimine (PEI) onto FTO, a series of inverted Schottky CQD SCs with varied PbS CQD sizes and QD layer thicknesses were fabricated and characterized using capacitance–voltage (C–V), current–voltage (J–V), and external quantum efficiency (EQE). A Schottky junction, of about 180 nm in width, was formed at the front TCO contact, resulting in an EQE of approximately 70% in the short-wavelength region. The champion device reached 3.8% AM1.5 in power conversion efficiency, and retained efficiency over several weeks of air-exposure. A record open-circuit voltage (VOC) of 0.75 V was achieved by employing PbS CQDs of 1.56 eV in the bandgap. Advantages including the simple device structure, efficient carrier extraction, and air-stability demonstrated in this study suggest that inverted Schottky CQD SCs can reduce the price per Watt ratio and facilitate the development of CQD tandem solar cells.

The purpose of this study is to propose a modification factor to reflect the stiffness modification when a step is located in flat plates. Reinforced concrete slabs with steps have different structural characteristics that are demonstrated by a series of structural experiment and nonlinear analysis. The corner at the step is weak and flexible, and thus the associated rotational stiffness at the corner of the step is identified through analysis of 6 type models using a nonlinear finite element program. Then a systematic analysis on stiffness changes is performed using a linear finite element procedure along with rotational springs. The stiffness of reinforced concrete flat plates with steps is mainly affected by the step length, location, thickness and height. Therefore, a single modification factor for each of these variables is obtained, while other variables are constrained. When multiple variables are considered, each single modification factor is multiplied each other. Such a method is verified by a comparative analysis. Finally, a complex modification factor can be applied to the existing effective beam width.

Next-generation ITS(Intelligent Transportation System) adopts WAVE(Wireless Access in Vehicular Environment) system which is capable of the bidirectional communication system in vehicular environments. u-Transportation system adopted WAVE communications system to show the optimal performance in terms of various services with regard to vehicle safety and traffic. In this paper, we introduce testbed of ubiquitous-Transportation system and its service. Then, we describe WAVE system for supporting next-generation ITS service. Also, we carried out tests in real road environments in order to verify communication functions of WAVE systems and its performance. We confirmed that our communication systems for supporting services meet the communication performance.

The improvement of power conversion efficiency, especially current density (Jsc), for nanocrystal quantum dot based heterojunction solar cells was realized by employing a trenched ZnO film fabricated using nanoimprint techniques. For an optimization of ZnO patterns, various patterned ZnO films were investigated using electrical and optical analysis methods by varying the line width, interpattern distance, pattern height, and residual layer. Analyzing the features of patterned ZnO films allowed us to simultaneously optimize both the pronounced electrical effects as well as optical properties. Consequently, we achieved an enhancement in Jsc from 7.82 to 12.5 mA cm(-2) by adopting the patterned ZnO with optimized trenched shape.

Antireflective non-periodic and periodic sub-wavelength structures (SWSs) are fabricated on indium tin oxide (ITO) layers deposited on p-GaN layers of GaN-based green light-emitting diodes (LEDs). The light output powers of the LEDs using non-periodic and periodic SWSs are increased by 18% and 39% at a 20-mA input current, respectively, compared to LEDs with flat ITO layers. Periodic ITO SWSs show a larger enhancement of output power because they have more effective profiles of the graded refractive index. The output power of periodic SWS LEDs is improved in all angular directions, indicating that the improved output power is attributed to lower total internal reflection and lower Fresnel reflection.

Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. This NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited to InGaN-based light emitting devices.

We investigated the CdS/Cu(In,Ga)Se2 interface characteristics of Cu(In,Ga)Se2 (CIGS) thin-film solar cells by using photoreflectance spectroscopy and their influence on the photovoltaic performance. We prepared CIGS solar cells with CdS and CIGS layers fabricated by using different methods of chemical bath deposition (CBD). The thiourea concentration in the CBD-CdS process was varied from 0.025 M to 0.1 M. The final In-Ga-Se deposition time for the CIGS film’s deposition was varied from 300 s to 490 s. We fabricated solar cells with thin films fabricated by using a combination of these conditions. The transition energies changed from 2.277 eV to 2.387 eV and the conversion efficiencies changed from 14.13% to 15.81% depending on the fabrication process. The formation of different states in CdS/CIGS resulted in different conversion efficiencies, as well as different band alignments at the CdS/CIGS interface.

The ability to create and manipulate large arrays of inorganic semiconductor micro/nanostructures for integration on unconventional substrates provides new possibilities in device engineering. Here, simple methods are described for the preparation of structures of single crystalline silicon in suspended and tethered configurations that facilitate their deterministic assembly using transfer-printing techniques. Diverse shapes (e.g., straight or curved edges), thicknesses (between 55 nm and 3 μm), and sizes (areas of 4000 μm(2) to 117 mm(2) ) of structures in varied layouts (regular or irregular arrays, with dense or sparse coverages) can be achieved, using either flat or cylindrical roller-type stamps. To demonstrate the technique, printing with 100% yield onto curved, rigid supports of glass and ceramics and onto thin sheets of plastic is shown. The fabrication of a printed array of silicon p(+) -i-n(+) junction photodiodes on plastic is representative of device-printing capabilities.

A novel self-charging platform is proposed using colloidal-quantum-dot (CQD) photovoltaics (PVs) via the near-infrared (NIR) band for low-power electronics. Low-bandgap CQDs can convert invisible NIR light sources to electrical energy more efficiently than wider spectra because of reduced thermalization loss. This energy-conversion strategy via NIR photons ensures an enhanced photostability of the CQD devices. Furthermore, the NIR wireless charging system can be concealed using various colored and NIR-transparent fabric or films, providing aesthetic freedom. Finally, an NIR-driven wireless charging system is demonstrated for a wearable healthcare bracelet by integrating a CQD PVs receiver with a flexible lithium-ion battery and entirely embedding them into a flexible strap, enabling permanent self-charging without detachment.

Microstructural analyses of of ZnO films on (1 1 1) Si substrates grown by plasma-assited molecualr beam epitaxy were performed in this study. Zn pre-deposition and its subsequent oxidation, in which either oxygen gas or oxygen-plasma was used as the oxygen source, were employed before ZnO growth. Both reflection high energy electron diffraction and x-ray pole figure showed the single crystalline features in the ZnO films with both post-oxidation of deposited Zn. Detailed transmission electron microscopy (TEM), however, revealed a locally multi-crystalline feature with 30 degrees-rotated domians at the near-interface regions in the ZnO film with oxidation by oxygen gas. ZnO film with oxidation of pre-deposited Zn by oxygen-plasma was observed to be single crystalline through the whole thickness by TEM. We observed a new epitaxial relationship, (0 0 0 1)ZnO//(1 1 1)Si and [0 1 1¯ 0]ZnO//[1 1¯ 0]Si, with a crystallographic rotation of ZnO with respect to Si by 30 degrees, which is energitically more favorable because of a lower lattice misfit (2.2%). No cracks were observed from the ZnO film with a thickness of 1.5 μm, supporting the mechanical integrity of the film prepared in this study.

Nanostructured ZnO films were fabricated on nanopored Si(001) surfaces through reactive ion etching and plasma-assisted molecular-beam epitaxy techniques. Nanowall-like nanostructures were formed on the ZnO film surfaces depending on the thickness of the ZnO films. Significant enhancement of the photoluminescence intensity up to 15 fold was observed from the nanostructured ZnO films. We found that the emission properties of the film changed very sensitively with the nanostructure on the surface and the enhancement is closely related to the formations of nanostructures on the surface of the ZnO films, not at the interface between the films and the substrate. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Non-polar, A-plane ( 1 1 2 ¯ 0 ) ZnO films are epitaxially grown on R-plane ( 1 1 ¯ 0 2 ) Al2O3 substrates by plasma-assisted molecular-beam epitaxy and structural and optical properties are investigated. Epitaxial relationships between ZnO films and Al2O3 substrates are determined to be ZnO ( 1 1 2 ¯ 0 ) / / Al 2 O 3 ( 1 1 ¯ 2 0 ) , ZnO [ 1 ¯ 1 0 0 ] / / Al 2 O 3 [ 1 1 2 ¯ 0 ] . The misfit is relaxed by the regularly spaced misfit dislocations. Structural properties are anisotropic and surfaces of films show stripes running along the ZnO [ 0 0 0 1 ] direction. Full width at half maximums of X-ray rocking curves for the on-axis ( 1 1 2 ¯ 0 ) with φ=0° and 90°, and the off-axis ( 1 0 1 ¯ 1 ) reflections are 0.41°, 0.36°, and 0.39°, respectively, for the 300 nm-thick ZnO film. Near-band edge emissions are dominant in low-temperature (12 K) photoluminescence while emissions from deep levels are negligible indicating a high optical quality of the layers. The near-band edge emissions are strongly polarized perpendicular to the [ 0 0 0 1 ] axis. Transitions of neutral-donor bound excitons (D0X) and allowed free excitons are observed in photoluminescence and photoreflectance spectra, which are significantly blue-shifted compared to the transitions in C-plane ZnO.

We fabricated heterojunction solar cells with PbSe/PbS core shell quantum dots and studied the precisely controlled PbS shell thickness dependency in terms of optical properties, electronic structure, and solar cell performances. When the PbS shell thickness increases, the short circuit current density (JSC) increases from 6.4 to 11.8 mA cm(-2) and the fill factor (FF) enhances from 30 to 49% while the open circuit voltage (VOC) remains unchanged at 0.46 V even with the decreased effective band gap. We found that the Fermi level and the valence band maximum level remain unchanged in both the PbSe core and PbSe/PbS core/shell with a less than 1 nm thick PbS shell as probed via ultraviolet photoelectron spectroscopy (UPS). The PbS shell reduces their surface trap density as confirmed by relative quantum yield measurements. Consequently, PbS shell formation on the PbSe core mitigates the trade-off relationship between the open circuit voltage and the short circuit current density. Finally, under the optimized conditions, the PbSe core with a 0.9 nm thick shell yielded a power conversion efficiency of 6.5% under AM 1.5.

The carrier injection efficiency (CIE) and the radiative efficiency (RE) are experimentally determined in order to clarify the origin of the efficiency droop in blue-emitting GaN light emitting diodes. The difference in the shape of RE curves and the external quantum efficiency (EQE) curves shows the CIE is a function of the injection current, while the RE curves show the droop behavior to a certain degree. The experimentally determined CIE is significantly lower than unity and decreases with the current density, indicating that imperfect carrier injection has strong effects on the efficiency droop. Through our analysis, we conclude that both an intrinsic component, such as Auger recombination, and current leakage component exist and make notable contributions to the total EQE droop. These two components can be quantitatively separated through our proposed method. In addition, the result above is also comparatively investigated with the result of time-resolved electroluminescence (TREL) spectroscopies. The obtained CIE and RE consistently explain the behavior of TREL at various current density levels.

Nanoengineered fluorescent response is reported from semiconductor core-shell (CdSe/ZnS) quantum dots in proximity to the surface plasmon polariton field of periodic Ag nanoparticle arrays. Tuning the surface plasmon polariton resonance to the quantum dot exciton emission band results in an enhancement of up to approximately 50-fold in the overall fluorescence efficiency, in a design where each Ag nanoparticle is interconnected by a continuous Ag thin film. Propagating modes of surface plasmon resonances have a direct impact on the fluorescence enhancement.