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The manufacturers of high-performance logic have been ardent champions of Moore's Law, which has resulted in exponential increase in aerial transistor density to 100 million transistors per square millimeter of silicon real estate. However, it is the memory chip makers who have taken the first step toward escaping the confines of scaling within the horizontal plane and have embraced the vertical or the third dimension. The dynamic random access memory manufacturers have adopted stacked capacitors that tower above the silicon plane that hosts the access and peripheral transistors, whereas the nand flash memory technologists can stack 128 layers of charge trap flash cells on top of each other in a monolithic fashion. To enable monolithic three-dimensional (M3D) integration of high-performance logic, one needs to solve the fundamental challenge of low temperature (

We demonstrate, for the first time, monolithic 3D (M3D) integration of back-end-of-line (BEOL) compatible Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric FET (FeFET) with front-end-of-line (FEOL) high-k/metal gate (HKMG) Si-NMOS. We use low thermal budget ( 2 O 3 (IWO) semiconducting oxide channel and demonstrate high remnant polarization charge density 2P R , of 40μC/cm2 reliable with switching characteristics. We report (a) read memory window of 0.45V in ultra-scaled 20nm channel length IWO FeFET, (b) write speed of 100ns, and (c) write endurance >108 cycle. We further demonstrate a 2bit/cell synaptic weight cell with well separated conductance states. System-level analysis of compute-in-memory (CIM) accelerators for performing inference on CIFAR-10 image dataset using VGG-8 model shows that 22nm BEOL FeFET achieves 3× higher energy-efficiency than 7nm SRAM while occupying a smaller memory array area due to area folding enabled by M3D architecture.

We demonstrate a novel ferroelectric (FE) superlattice based multi-level cell (MLC) memory, which outperforms previous multi-state FE memory implemented using partial polarization switching, from the standpoint of device-to-device variation. We show that the FE superlattice consisting of alternate FE and dielectric (DE) thin layers provides a scalable approach for MLC implementation because: 1) the superlattice constructs controlled layer-by-layer polarization switching in the constituent FE layers; 2) the number of FE layers equals the number of stored bits; and, finally, (3) the switching of all the domains in a given coercive field (E C ) distribution associated with one isolated peak suppresses the variation induced by partial polarization switching. Based on these, we experimentally demonstrate a 2-bit/cell FE superlattice memory and simulate a 3-bit/cell memory with excellent device-to-device variation.

Lyme disease is an infectious disease caused by the Borrelia burgdorferi bacterium. Early diagnosis of Lyme disease could prevent patients from developing serious side effects such as chronic arthritis and permanent neurological disorders. Lyme disease diagnosis is currently held back by a lack of reliable tools that are sufficiently sensitive and specific to allow early stage detection. Here, we demonstrate all electronic nano-biosensors for multiplexed detection of antigens of B. burgdorferi at concentrations as low as 2 pg ml−1. The sensors are based on graphene field-effect transistors (GFETs) coupled with genetically engineered antibody fragments. Single-chain variable fragment (scFv) antibodies are used to obtain a closer proximity of the target-binding event to the graphene sensor surface and for higher immobilization density. When compared to GFET nano-biosensors that use the parental immunoglobulin G (IgG) antibodies, scFv GFET nano-biosensors achieve approximately a 4000 × improvement to the limit of detection. We also demonstrate multiplexed detection of B. burgdorferi antigens through site-specific immobilization of scFvs on GFET arrays, which can potentially reduce the false-positive diagnosis ratio of Lyme disease. This work offers a pathway towards point-of-care detection of Lyme disease at an early stage.

Modern development of chemical manufacturing requires a substantial reduction in energy consumption and catalyst cost. Sunlight-driven chemical transformation by metal oxides holds great promise for this goal; however, it remains a grand challenge to efficiently couple solar energy into many catalytic reactions. Here we report that defect engineering on oxide catalyst can serve as a versatile approach to bridge light harvesting with surface reactions by ensuring species chemisorption. The chemisorption not only spatially enables the transfer of photoexcited electrons to reaction species, but also alters the form of active species to lower the photon energy requirement for reactions. In a proof of concept, oxygen molecules are activated into superoxide radicals on defect-rich tungsten oxide through visible-near-infrared illumination to trigger organic aerobic couplings of amines to corresponding imines. The excellent efficiency and durability for such a highly important process in chemical transformation can otherwise be virtually impossible to attain by counterpart materials.