1. Performance Analysis of Group IV Material Based Tunnel Field Effect Transistor: Effect of Drain Splitting and Introducing Ge-Strip at Source- Channel Junction
- Author
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Surender Kumar, Rikmantra Basu, Rajesh Mehra, and Harsh Yadav
- Subjects
010302 applied physics ,Materials science ,business.industry ,Doping ,Gate dielectric ,02 engineering and technology ,Dielectric ,021001 nanoscience & nanotechnology ,Tunnel field-effect transistor ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Ion ,Power (physics) ,Group (periodic table) ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Communication channel - Abstract
The performance effect of splitting and abrupt doping in the drain region, use of a Ge strip at source-channel junction in group IV material based (Ge1 − xSnx/ Si1 − y − zGeySnz) Tunnel Field Effect Transistor (TFET) is investigated in the present manuscript. The variation of certain device parameters, such as mole fraction, different gate dielectrics, gate dielectric thickness and drain doping concentrations are applied to analyze the performance of proposed group IV material based TFET in terms of current-voltage (I-V) characteristics, potential profile and ION/IOFF ratio using device simulator SILVACO TCAD. The simulation results obtained for the proposed TFET structure are compared with the other TFET structures available in the literature, which shows better results as ION/IOFF ratio was received of the order of 1012 in comparison to conventional group IV material based TFET and subthreshold swing of 25.03 mV/decade, which makes the proposed structure promising for high speed switching action with low power CMOS compatibility.
- Published
- 2020
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