1. Insights into interface and bulk defects in a high efficiency kesterite-based device
- Author
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Robert Fonoll-Rubio, Alejandro Pérez-Rodríguez, Javier Blanco-Portals, Lorenzo Calvo-Barrio, Maxim Guc, J.A. Andrade-Arvizu, Victor Izquierdo-Roca, Ignacio Becerril-Romero, Francesca Peiró, Marcel Placidi, Sònia Estradé, Claudia Schnohr, Maurizio Ritzer, Edgardo Saucedo, Institut de Recerca en Energía de Catalunya, Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, and Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
- Subjects
Materials science ,Energies [Àrees temàtiques de la UPC] ,02 engineering and technology ,engineering.material ,010402 general chemistry ,01 natural sciences ,symbols.namesake ,Nano ,Electron microscopy ,Environmental Chemistry ,Kesterite ,Spectroscopy ,Auger electron spectroscopy ,Renewable Energy, Sustainability and the Environment ,business.industry ,021001 nanoscience & nanotechnology ,Pollution ,0104 chemical sciences ,Characterization (materials science) ,Microscòpia electrònica ,Nuclear Energy and Engineering ,engineering ,symbols ,Optoelectronics ,Dislocation ,0210 nano-technology ,business ,Raman spectroscopy ,Crystal twinning - Abstract
This work provides a detailed analysis of a high efficiency Cu2ZnSnSe4 device using a combination of advanced electron microscopy and spectroscopy techniques. In particular, a full picture of the different defects present at the interfaces of the device and in the bulk of the absorber is achieved through the combination of high resolution electron microscopy techniques with Raman, X-ray fluorescence and Auger spectroscopy measurements at the macro, micro and nano scales. The simultaneous investigation of the bulk and the interfaces allows assessing the impact of the defects found in each part of the device on its performance. Despite a good crystalline quality and homogeneous composition in the bulk, this work reports, for the first time, direct evidence of twinning defects in the bulk, of micro and nano-voids at the back interface and of grain-to-grain non-uniformities and dislocation defects at the front interface. These, together with other issues observed such as strong absorber thickness variations and a bilayer structure with small grains at the bottom, are shown to be the main factors limiting the performance of CZTSe devices. These results open the way to the identification of new solutions to further developing the kesterite technology and pushing it towards higher performances. Moreover, this study provides an example of how the advanced characterization of emergent multilayer-based devices can be employed to elucidate their main limitations.
- Published
- 2021