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We summarize flow and filling effects detected during hot embossing lithography (HEL), which reflect the visco-elastic properties of the polymers as well as the specific processing conditions and stamp pattern configurations. In particular a delayed elastic recovery is reported, which is found in larger elevated stamp regions. The consequences of these effects for mask definition by HEL are discussed, and strategies for wafer-scale imprint are de-duced. Successful imprint of 4' wafer is demonstrated under adequate processing conditions.

Mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 micrometers were produced in the polymer layer by nanoimprint. Optimization of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.