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This paper reports high frequency surface acoustic wave (SAW) devices developed on Sc doped (30%) AlN on high resistivity Si for demonstrating surface acoustic wave – spin wave coupling. Enhanced Q-factors were found for both propagation modes – Rayleigh (4.7 GHz) and Sezawa (8 GHz). SAW/SW (spin wave) coupling is proven for two-ports SAW structures having a magnetostrictive layer of Ni between the two interdigitated transducers (IDTs). A decrease of 3.42 dB was observed in the amplitude of the transmission parameter, at resonance, when the magnetic field was applied. The angle between the applied magnetic field and the SAW propagation direction is π/4.

A compact analytical model is reported capturing the effects of Coulomb Blockade and charge quantization on the drain current characteristics of a MOSFET-based semiconductor quantum dot at cryogenic temperatures. It is implemented as a Verilog-A add-on to the foundry-provided MOSFET model to facilitate potential integration in any design kit and allow for simulation of quantum processors that integrate qubits and control electronics on the same die. The model was verified in the 6-50 K temperature range on the measured I-V characteristics of a nanoscale p-MOSFET fabricated in production 22nm FDSOI CMOS technology.

Thin AlN piezoelectric layers have been deposited on high resistivity Si and glass substrates by reactive RF magnetron sputtering, in order to manufacture one-port gigahertz operating surface acoustic wave (SAW)-type resonators to be used as temperature sensors. The growth morphology surface topography, crystallographic structure, and crystalline quality of the AlN layers have been analyzed. Advanced nanolithographic techniques have been used to manufacture structures having interdigitated transducers with fingers and finger interdigit spacing width in the range of 250–170 nm. High resonance frequency ensures the increase of the sensitivity, but also of its normalized value, the temperature coefficient of frequency (TCF). The resonance frequency shift versus temperature has been measured in the −267°C−+150°C temperature range, using a cryostat setup adapted for on wafer microwave measurements up to 50 GHz. The sensitivity and the TCF were determined in the 25 °C–150 °C temperature range.

This work analyzes resonance frequency shift vs. the applied magnetic field strength for GHz operating GaN/Si SAW single resonators. Magnetostrictive elements (Ni and CoFeB) were deposited in the proximity of the interdigitated transducers (IDTs) of the resonators (A-type structures) and also over the IDTs, after covering them with a BCB layer to avoid short circuits with IDTs metal (B-type structures). This work targets emerging applications of SAW resonators in driving spin wave pumping and in coupling of surface acoustic waves (SAW) with superconducting Q-bits. Magnetic sensitivity of the SAWs was analyzed at room temperature (RT) and at cryogenic temperatures, obtaining high magnetic sensitivities at 16 K. According to our knowledge, GaN based SAWs are first time used in magnetic applications; also, cryogenic behavior of magnetic SAW sensors is first time analyzed., This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No. 801055 "Spin Wave Computing for Ultimately-Scaled Hybrid Low-Power Electronics" - CHIRON

In the current work we present AIN/Si based Surface Acoustic Wave (SAW) devices exploited as high sensitivity temperature sensors. The experimental results show that the resonance frequency varies between 3.2 and 5.5 GHz, depending on the finger/interdigit spacing width and metal thickness. The temperature measurements were performed between −250°C and +150 °C in a cryostat. The sensitivities were investigated between 24–150 °C and the values were compared to the results obtained for similar GaN/Si based SAW structures.

The authors investigated the prevalence of tardive dyskinesia among elderly psychiatric patients who had never received neuroleptic medication before their first hospitalization.The study was performed in the geriatric psychiatry unit of a university-affiliated hospital in Canada and involved all first-admission patients admitted from September 1984 through August 1989 who had never taken neuroleptic drugs. In September and October 1989, the patients who were available for follow-up were examined and given ratings on the Abnormal Involuntary Movement Scale to establish the presence or absence of tardive dyskinesia. The patients' records were reviewed for information on age, diagnosis, duration of hospitalization, neuroleptic treatment received after admission, anticholinergic drugs received, and drug-free periods.Of the 162 patients who were available and whose data were analyzed, a total of 99 had been treated with neuroleptics, and 35 (35.4%) of these were found to have tardive dyskinesia. Two of the 35 also had tardive dystonia. Significantly more patients with major depression than patients with primary degenerative dementia or delusional psychosis had tardive dyskinesia.This study confirms the higher vulnerability of elderly psychiatric patients treated with neuroleptics to the development of tardive dyskinesia. The authors stress that caution is especially necessary when neuroleptics are prescribed for older patients with major affective disorders.

Fractional hepatic extraction of glucose was determined from the appearance in the systemic circulation of ingested 3-[3H]glucose. Using the glucose clamp technique, studies were done under steady-state conditions of basal glycemia and insulinemia, normoglycemia (0.8 mg/mL) and mild hyperinsulinemia (approximately 40 microU/mL), hyperglycemia (2 mg/mL-1) and hyperinsulinemia (approximately 100 microU/mL). Based on previous results in the dog, an oral glucose load of 2 g was used to label the portal vein glucose; this amount was chosen so as to minimize disturbance of the portal steady state but still avoid excessive loss during absorption. Additional subjects with hyperglycemia and hyperinsulinemia received an oral load of 50 g of glucose. Fractional extraction in normal subjects under near-basal conditions of glycemia and insulinemia was 19% in normal subjects and in patients with noninsulin-dependent diabetes mellitus (NIDDM) elevation of serum insulin, with or without hyperglycemia, which led to an average extraction rate of 32% of the ingested glucose. Absolute hepatic glucose uptake, calculated from the fractional extraction the plasma glucose concentration, and hepatic plasma flow accounted for 50% to 72% of total glucose use during the various steady states and following ingestion of 50 g of glucose. It is concluded that hepatic uptake or extraction, as opposed to net uptake, proceeds actively even when plasma glucose and insulin are within the normal basal range; it is increased in the presence of hyperinsulinemia, with or without hyperglycemia; and it is unaltered in NIDDM.