1. Preparation of Cu2ZnSnS4 thin films by sulfurization of stacked metallic layers
- Author
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Tatsuhiro Sato, Hironori Katagiri, Akiko Takeuchi, Aya Mikaduki, Koichiro Oishi, Yuki Kubo, Kazuo Jimbo, Hideaki Araki, Makoto Yamazaki, and Win Shwe Maw
- Subjects
Materials science ,business.industry ,Energy conversion efficiency ,Metals and Alloys ,Surfaces and Interfaces ,Substrate (electronics) ,Electron beam physical vapor deposition ,Evaporation (deposition) ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,law.invention ,chemistry.chemical_compound ,Optics ,chemistry ,Chemical engineering ,law ,Solar cell ,X-ray crystallography ,Materials Chemistry ,CZTS ,Thin film ,business - Abstract
Stacked precursors of Cu, Sn, and Zn were fabricated on glass/Mo substrates by electron beam evaporation. Six kinds of precursors with different stacking sequences were prepared by sequential evaporation of Cu, Sn, and Zn with substrate heating. The precursors were sulfurized at temperatures of 560 °C for 2 h in an atmosphere of N2 + sulfur vapor to fabricate Cu2ZnSnS4 (CZTS) thin films for solar cells. The sulfurized films exhibited X-ray diffraction peaks attributable to CZTS. Solar cells using CZTS thin films prepared from six kinds of precursors were fabricated. As a result, the solar cell using a CZTS thin film produced by sulfurization of the Mo/Zn/Cu/Sn precursor exhibited an open-circuit voltage of 478 mV, a short-circuit current of 9.78 mA/cm2, a fill factor of 0.38, and a conversion efficiency of 1.79%.
- Published
- 2008
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