Search

Within this study, we investigate the intrinsic photostability of thin‐film solar cells, here organic photovoltaic cells. Since degradation under natural sun light proceeds within the timeframe of months and years, the process needs to be speeded up for fast material analysis and screening, using high‐concentration accelerated lifetime testing (high‐C ALT). For this purpose, we established setups allowing irradiances of up to 730 sun equivalents (SE). One key finding of our study is that accelerating the testing procedure by such large intensities is possible but a precise measurement and control of the solar cell temperature is absolutely essential. Accordingly, we developed an innovative method of determining the temperature of the active layer which offers significant advantages over commonly used measurement methods. Furthermore, it was found that the degradation process under high illumination densities can be well described by a stretched exponential law. We demonstrate that the temperature kinetics of P3HT:PCBM was found to be Arrhenius governed with an activation energy of 27.2 kJ/mol under continuous illumination of 300 SE. Finally, it was shown that the velocity of light‐induced degradation of short‐circuit current depends linearly on the used irradiance dose at a given temperature starting from normal illumination conditions up to at least 300 SE. This makes high‐C ALT a very valuable tool for swift screening of the lifetime of novel thin‐film solar cells and materials.

Degradation of backsheets (BSs) of commercial silicon PV modules is currently recognized as a source of reduced module performance and module failure. Monitoring of the BS state in the field is possible by using non-destructive and highly informative near-infrared absorption (NIRA) spectroscopy. Application of NIRA for the analysis of multi-layer polyethylene terephtalate (PET) based BSs, which dominate the PV module market, is challenging due to a large variety of possible BS configurations that show only small differences in NIRA spectra. In the present work, a spectroscopic tool for the structural identification of PET-based BSs is introduced. The method is based on a principal component analysis of a database of 250 representative NIRA spectra of BSs of different types. It allows a BS with an unknown structure to be assigned to one of 12 different types based solely on its NIRA spectrum. The identification was successfully validated on a test collection of 45 selected BSs and shown to be feasible for the field deployment. Further automation of NIRA measurements and spectral analysis are expected to elevate the proposed tool to the level of a non-intrusive high-throughput field analysis of the BS composition and state in operating PV module grids.

A lot of effort is required in order to close the efficiency gap between laboratory record Cu(In,Ga)Se 2 (CIGS) solar cells and commercially produced modules. An obstacle easily overlooked is the fact that reduced module performance may have multiple root causes. Here, we show how to isolate two main factors that influence the open circuit voltage ( V oc ) of photovoltaic devices, the material composition and the local defects, here shunts in particular, i.e., regions of significantly lowered resistivity. In order to characterize the material composition, we used electroluminescence spectroscopy. Additionally, we investigated the effect of local defects on the V oc , by the use of thermography. Which of both factors dominates the resulting V oc depends on the insolation intensity under which the device is operated. We established a model in order to estimate the V oc as a function of the luminescence peak wavelength, the quantification of the thermal hot spots caused by local defects, and the insolation intensity. Subsequently, we investigated how these factors affect the electrical conversion efficiency of the device. The combination of these two measurement techniques results in a more conclusive evaluation of the electrical parameters, thereby enabling an improved quality assessment to allow a successive process optimization. This approach is also applicable to other thin film PV technologies such as perovskite and organic solar cells.

Water ingress into the encapsulation of electronic devices is a serious issue, especially for organic and perovskite-based electronics. In order to guide the development of suitable barrier materials and design, a reliable, fast, and non-destructive analysis tool is required. In this work, an imaging setup is presented, which is based on selective infrared (IR) radiation sources and a mid- IR sensitive camera that uses the absorption band of water around 1920 nm and a reference band. This system enables us to monitor the distribution of water concentration inside the packaging of devices and its change over time. Our measurement is capable of detecting the local presence of water down to the mg/m2 concentration range in a wide variety of encapsulation materials. The new tool allows identifying the pathways of moisture ingress into the encapsulation along with the corresponding diffusion coefficient. Thus, it provides fast and reliable analysis of humidity related failure mechanisms, and consequently helps to improve the design of encapsulation materials and processes.

As the importance of electronics and software in automobiles grows, software maturity becomes an increasing challenge. To avoid the delays of production starts as well as recalls, new development processes are needed. To increase the testing abilities the compatibility between different development releases of electronic control units must be improved. To achieve this, we propose “hierarchical versioning”, a novel versioning scheme and set of rules how to handle compatible and incompatible modifications, using the hierarchical structure of vehicle networks. Data of the AUTOSAR (AUtomotive Open Software ARchitecture) based development history of a current model series automobile has been analyzed to gauge the applicability of hierarchical versioning. We found a worst case bandwidth increase of about 30% for intermittent development releases when using the scheme to introduce complete backward compatibility for an additional release cycle. The bandwidth of the final release is not affected. During this analysis we also noticed that less than 3% of changes cause incompatibilities in more than 100 communication connectors, while most of the changes only affect less than 10 communication connectors. This may further aide in increasing compatibility between releases and reduce the added bandwidth.

“The car is the ultimate mobile device” [1] and with its connectivity and a large number [2] of sensors and actuators an example for a cyber-physical system. The advantages of a service-oriented architecture (SOA) are shown in comparison to the classic signal-oriented design. A hybrid architecture which contains both static signal- and dynamic service-oriented elements is introduced. With an example we show how the benefits of a SOA can be achieved, even without migrating the whole vehicle away from the current static communication schemes. The “SuperTuxKart” application integrated into the Mercedes CLA as presented by Daimler on the Mobile World Congress 2019 [3] is an additional customer value application and used as our showcase. Its development and implementation can be greatly simplified if the target vehicle has an electric/electronic architecture, which is service-oriented. We introduce a new process to develop an application within a service-oriented vehicle and use software over the air (SOTA) updates to deploy it. The process is illustrated using a fictive, service-based application.

In typical power electronic modules several semiconductor dies such as MOSFET or IGBT are soldered to a DBC substrate. During module production the quality of the solder layers can be monitored by the use of X-ray inspection and the void rate can be determined. Recently, the more robust Ag-sinter technology is deployed for attaching the power dies to the substrate, especially for high reliability or high temperature requirements. Besides voiding also adhesion problems can occur during sintering due to multiple reasons (e.g. contamination). In contrast to volume defects, pure adhesion problems cannot be detected by means of X-rays. Accordingly, other methods have to be applied for process monitoring. The present investigation compares the advantages and disadvantages of different non-destructive imaging techniques towards the detection of defects in sinter layers. Besides X-ray, Scanning Acoustic Microscopy (SAM) and Lock-in Thermography methods (DLIT + ILIT) were studied and evaluated in terms of suitability for detecting different defect types, resolution (minimum defect sizes), inspection time and possible integration into the assembly process.

In proximity mask aligner photolithography, diffraction of light at the mask pattern is the predominant source for image shape distortions such as line end shortening and corner rounding. One established method to mitigate the impact of diffraction is optical proximity correction. This method relies on a deliberate sub-resolution modification of photomask features to counteract such shape distortions, with the goal to improve pattern fidelity and uniformity of printed features. While previously considered for masks featuring only rectangular shapes in horizontal or vertical orientation, called Manhattan geometries, we demonstrate here the capabilities of computational mask aligner lithography by extending optical proximity correction to non-Manhattan geometries. We combine a rigorous simulation method for light propagation with a particle-swarm optimization to identify suitable mask patterns adapt to each occurring feature in the mask. The improvement in pattern quality is demonstrated in experimental prints. Our method extends the use of proximity lithography in optical manufacturing, as required in a multitude of micro-optical devices. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Currently, certified lab scale organic photovoltaic (OPV) cells reach efficiencies of more than 12% and life times of 10 years. For commercialization, it is necessary to understand which performance can be reached in fully printed large scale products. Our investigations show that large area, semi-transparent organic photovoltaic modules based on industrially available materials can achieve power conversion efficiencies of more than 4.8% on rigid substrates and 4.3% on flexible ones. The modules processed with a combination of large area coating and laser patterning with an active area of 68.76 cm 2 for flexible modules and a total area of 197.4 cm 2 for glass modules offer exceptionally high geometric fill factors of more than 94% and a transparency of more than 10%. The processing recipe and the layout of the modules are based on indications of optical and electrical simulations which allow to produce devices with only negligible losses in comparison to small single cell devices. Losses due to imperfect coating or patterning are identified by thermal imaging.

It is well known that the performance of solar cells may significantly suffer from local electric defects. Accordingly, infrared thermography (i.p. lock-in thermography) has been intensely applied to identify such defects as hot spots. As an imaging method, this is a fast way of module characterization. However, imaging leads to a huge amount of data, which needs to be investigated. An automatized image analysis would be a very beneficial tool but has not been suggested so far for lock-in thermography images. In this manuscript, we describe such an automatized analysis of solar cells. We first established a robust algorithm for segmentation (or recognition) for both, the PV-module and the defects (hot spots). With this information, we then calculated a parameter from the IR-images, which could be well correlated with the maximal power (Pmpp) of the modules. The proposed automatized method serves as a very useful foundation for faster and more thorough analyses of IR-images and stimulates the further development of quality control on solar modules.

Superconducting nanowire single-photon detectors promise efficient (~100%) and fast (~Gcps) detection of light at the single-photon level. They constitute one of the building blocks to realize integrated quantum optical circuits in a waveguide architecture. The optical response of single-photon detectors, however, is limited to measure only the presence of photons. It misses the capability to resolve the spectrum of a possible broadband illumination. In this work, we propose the optical design for a superconducting nanowire single-photon spectrometer in an integrated optical platform. We exploit a cascade of cavities with different resonance wavelengths side-coupled to a photonic crystal bus waveguide. This allows to demultiplex different wavelengths into different spatial regions, where individual superconducting nanowires that measure the presence of single photons are placed next to these cavities. We employ temporal coupled-mode theory to derive the optimal conditions to achieve a high absorption efficiency in the nanowire with fine spectral resolution. It is shown that the use of a mirror at the end of the cascaded system that terminates the photonic crystal bus waveguide increases the absorption efficiency up to unity, in principle, in the absence of loss. The expected response is demonstrated by full-wave simulations for both two-dimensional and three-dimensional structures. Absorption efficiencies of about 80% are achieved both in two-dimensional structures for four cascaded cavities and in three-dimensional structures for two cascaded cavities. The achieved spectral resolution is about 1 nm. We expect that the proposed setup, both analytically studied and numerically demonstrated in this work, offers a great impetus for future quantum nanophotonic on-chip technologies., 10 pages, 9 figures

Photons produced in the SPDC process typically propagate through optical elements such as waveguides, lenses and beam splitters. We aim to exploit unconventional optical elements, whose fabrication has recently become possible due to the rapid development of nanotechnologies. Such miniaturized devices are typically integrated on microchips that may later become parts of larger quantum circuits. An example is provided by metamaterials, which are periodic arrays of metallic nanoparticles. These nanoparticles support surface plasmon polaritons - hybrid excitations that combine electromagnetic fields with coherent oscillations of valence-electron plasma. Here we experimentally characterize in free space a nanostructural beam splitter, which was designed to feature 25 % of reflection and transmission, and 50 % of absorption. Furthermore we experimentally show quantum interference in that device.

We apply a high-resolution interference microscope with spectral resolution to investigate the scattering response of isolated meta-atoms in real space. The final meta-atoms consist of core-shell clusters that are fabricated using a bottom-up approach. The meta-atoms are investigated with an increasing complexity. We start by studying silica and gold spheres and conclude with the investigation of the meta-atom, which consists of a silica core sphere onto which gold nanospheres are attached. Numerical simulations entirely verify the measured data. The measuring process involves recording the intensity and phase of the total field emerging from the scattering process of an incident light at the particle in the transmitted half-space with spectral and high spatial resolution. We show that spectrally resolved high-resolution interference microscopy can be used to differentiate between nanoparticles and characterize single meta-atoms, something that is rarely accomplished. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices. Single photons are generated from electrically driven semiconducting single-walled carbon nanotubes embedded in a photonic circuit. Pronounced antibunching is observed when photon correlation is measured at cryogenic temperatures.

Commercial success of optoelectronical devices such as solar cells depend strongly on lifetime next to production costs and power conversion efficiency. While a steep decrease in production costs and significant increase in efficiency have been achieved, lifetime still plays often a limiting factor, in particular, in case of highly innovative new device types. Lifetime tests measuring the stability of devices without external influences (i. p. water) generally take very long time due to the required long lifetime of optoelectronical devices. We established a novel accelerated lifetime test (ALT) setup which may increase the test speed by a factor of several hundred. We verified the setup and the applicability of our ALT measurement routine with an experiment on a well-studied innovative thin-film solar cell type (P3HT:PCBM).

Local electric defects may result in considerable performance losses in solar cells. Infrared thermography is an essential tool to detect these defects on photovoltaic modules. Accordingly, IR-thermography is frequently used in R&D labs of PV manufactures and, furthermore, outdoors in order to identify faulty modules in PV-power plants. Massive amount of data is acquired which needs to be analyzed. An automatized method for detecting solar modules in IR-images would enable a faster and automatized analysis of the data. However, IR-images tend to suffer from rather large noise, which makes an automatized segmentation challenging. The aim of this study was to establish a reliable segmentation algorithm for R&D labs. We propose an algorithm, which detects a solar cell or module within an IR-image with large noise. We tested the algorithm on images of 10 PV-samples characterized by highly sensitive dark lock-in thermography (DLIT). The algorithm proved to be very reliable in detecting correctly the solar module. In our study, we focused on thin film solar cells, however, a transfer of the algorithm to other cell types is straight forward.

Author(s): Vetter, A; Babbe, FS; Hofbeck, B; Kubis, P; Richter, M; Heise, SJ; Ohland, J; Riedel, I; Brabec, CJ | Abstract: Local electric defects may result in considerable performance losses in solar cells. Infrared (IR) thermography is one important tool to detect these defects on photovoltaic modules. Qualitative interpretation of IR images has been carried out successfully, but quantitative interpretation has been hampered by the lack of “calibration” defects. The aims of this study are to (i) establish methods to induce well-defined electric defects in thin-film solar cells serving as “calibration” defects and to (ii) assess the accuracy of IR imaging methods by using these artificially induced defects. This approach paves the way for improving quality control methods based on imaging in photovoltaic. We created ohmic defects (“shunts”) by using a focused ion beam and weak diodes (“interface shunts”) by applying a femto-second laser at rather low power on copper indium gallium selenide cells. The defects can be induced precisely and reproducibly, and the severity of the defects on the electrical performance can be well adjusted by focused ion beam/laser parameters. The successive assessment of the IR measurement (ILIT-Voc) revealed that this method can predict the losses in Pmpp (maximal power extractable) with a mean error of below 10%. Copyright © 2016 John Wiley a Sons, Ltd.

Single photon technology is enabling for quantum communication and processing. Combining single photon sources, routing circuitry and highly efficient detectors in a high yield, low-loss and scalable fashion represent today a major challenge. Nanophotonic devices allow for the realization of on-chip small footprint architectures for generating, manipulating and detecting single photons. Waveguide-integrated superconducting nanowire single photon detectors are today state-of-the art devices capable of detecting single photons propagating in an integrated photonic circuit with high efficiency, speed and low timing uncertainty. Their excellent metrics in the near-infrared allows to directly interface on-chip devices with existing C-Band communication technology systems. To move towards high communication speed, efficient detectors able to sustain Gcps count rate are desirable. Here we present the design process and the experimental characterization of a new generation of fast detectors, consisting of µm-long NbN superconducting nanowires embedded in a SOI two-dimensional photonic crystal cavity. Almost 70% efficiency at telecommunication wavelengths has been achieved with negligible dark counts and sub-ns recovery time, which could enable Gcps count rates.

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuration is frequency-quadrupled using lithiumtriborate and potassium-uoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions

We present a mask-aligner lithographic system operated with a frequency-quadrupled continuous-wave diode laser emitting at 193 nm. For this purpose, a 772 nm diode laser is amplified by a tapered amplifier in the master-oscillator power-amplifier configuration. The emission wavelength is upconverted twice, using LBO and KBBF nonlinear crystals in second-harmonic generation enhancement cavities. An optical output power of 10 mW is achieved. As uniform exposure field illumination is crucial in mask-aligner lithography, beam shaping is realized with optical elements made from fused silica and CaF2 featuring a diffractive non-imaging homogenizer. A tandem setup of shaped random diffusers, one static and one rotating, is used to control speckle formation. We demonstrate first experimental soft contact and proximity prints for a field size of 1 cm2 with a standard binary photomask and proximity prints with a two-level phase mask, both printed into 120 nm layers of photoresist on unstructured silicon substrates.

The combination of efficient single-photon generation, manipulation, and detection on a single chip poses a major challenge for quantum photonics and all-optical quantum computing. Among a multitude of detection technologies, waveguide-integrated superconducting nanowire single-photon detectors stand out as they promise near-unity detection efficiencies at outstanding timing accuracy and speed. Here, by exploiting the concept of critical coupling, we present the integration of a short nanowire into a two-dimensional double heterostructure photonic crystal cavity to realize an integrated single-photon detector with excellent performance metric. The complete detector characterization reveals on-chip detection efficiencies of almost 70% at telecom wavelengths, recovery times of 480 ps, and vanishingly low dark count rates. Our design paves the way for the implementation of compact on-chip detector arrays and time-multiplexed single-detector schemes.

Two-dimensional surface waves are a cornerstone for future integrated photonic circuits. They can also be beneficially exploited in sensing devices by offering dark-field illuminations of objects. One major problem in sensing schemes arises from the individual sensing objects: the interaction of surface waves with an object reduces the field amplitude, and the readout of other objects along the propagation path suffers from this reduced signal. Here we show in two experiments that nondiffracting and self-healing Bloch surface waves can be launched using a Fresnel axicon (i.e., fraxicon). First, we visualize the generation of an array of multiple focal spots by scanning near-field optical microscopy in the infrared. With a second device operating in the visible, we demonstrate the self-healing effect directly using a far-field readout method by placing metallic nanoantennas onto the multiple focal spots of the fraxicon. Our study extends the versatile illumination capabilities of surface wave systems. Two-dimensional surface waves play an important role in optical systems such as sensing devices. The authors experimentally and theoretically demonstrate a method for multiple self-healing surface wave beams which can help overcome issues related to reduction in signal strength when surface waves encounter obstacles during their propagation.

We present and discuss Talbot mask-aligner lithography, relying on a continuous wave laser emitting at 193nm for the illumination. In this source, a diode laser at 772nm is amplified by a tapered amplifier in master-oscillator power-amplifier configuration and frequency-quadrupled in two subsequent enhancement cavities using lithium triborate and potassium fluoro-beryllo-borate nonlinear crystals to generate the emission at 193 nm. The high coherence and brilliance of such an illumination source is predestined for plane wave mask-aligner illumination, crucial in particular for high-resolution lithographic techniques such as Talbot lithography and phase-shift masks. Talbot lithography takes advantage of the diffraction effect to image periodic mask features via self-replication in multiples of the Talbot distance behind the photomask when exposed by a plane wave. By placing a photoresistcoated wafer in one of the Talbot planes, the mask pattern is replicated in the resist. Periodic patterns with diverse shapes are required for wire grid polarizers, diffraction gratings, and hole arrays in photonic applications as well as for filters and membranes. Using an amplitude mask with periodic structures, we demonstrate here with such a technique sub-micron feature sizes for various designs at a proximity gap of 20 µm.

Selective absorbers for CSP plants to suppress thermal losses and to increase the efficiency is a promising topic and strong scientific efforts have been spent on how to design and realize such materials. However, there has been no comprehensive optimization analysis of the overall efficiency of CSP plants with selective absorbers. We performed a comprehensive computational parameter study of operation temperature and optical properties of the absorber and investigated their effect on the overall plant efficiency in dependence of sun light concentration up to C = 2000 suns. Optimal operation temperatures were shown not to exceed 1383 K. By using selective absorbers instead of a black body or currently used materials, our assessment yields a potential electrical power output gain of up to around 35%. Our investigations also provide the optical parameters of an ideal (perfect selective) absorber. Its optimal cut off wavelength λ cut lies around 2.4 μm for concentration factors below 120 and above 600 suns. For C in the range of 120–600 suns the value of the cut off wavelength is 1.79 μm. Simulating non-ideal (realistic) absorption properties, it was found that the strongest influence is caused by high absorption at low wavelengths. Low emittance at longer wavelengths plays a less important role. Also the sharpness of the transition from high absorption to low emittance plays a minor role regarding overall plant efficiency. As a rule of thumb, the cut-off wavelength should be at around 2.4 μm when assuming realistic (non-ideal) spectral selectivity. Finally, the theoretical maximum overall efficiency of a CSP plant achievable by an ideal selective absorber was calculated to up to 73% at 2000 suns and even up to 65% for a selective absorber with realistic optical properties.

CuInGaSe2 (CIGS) thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. This occurs due to film's sensitivity to inhomogeneities during the manufacturing process. The result is a decrease of electrical power output from a cell or module. In this paper, we present the influence of macroscopic defects on the electrical behavior of CIGS thin film solar cells. To accomplish this, we investigated the relation between the IR-signal emitted of a defect in a cell (measured using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (Voc,cell) under low light conditions (

Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors

In this short communication, we present a method which utilizes contactless ILIT (illuminated lock-in thermography) measurement of a photovoltaic (PV) module and image postprocessing in order to calculate the peak power Pmpp of the module and to study the influence of local defects on the module performance. In total, 103 Copper-Indium-Gallium-Diselenide (CIGS) modules were investigated and the results showed a good correlation (mean error less than 6%) between the calculated IR-signal and the measured Pmpp. We performed our study on CIGS modules but the presented approach is not restricted to CIGS modules. The method provides a valuable tool for PV quality control.

Ultrafast single-photon detectors with high efficiency are of utmost importance for many applications in the context of integrated quantum photonic circuits. Detectors based on superconductor nanowires attached to optical waveguides are particularly appealing for this purpose. However, their speed is limited because the required high absorption efficiency necessitates long nanowires deposited on top of the waveguide. This enhances the kinetic inductance and makes the detectors slow. Here, we solve this problem by aligning the nanowire, contrary to usual choice, perpendicular to the waveguide to realize devices with a length below 1 μm. By integrating the nanowire into a photonic crystal cavity, we recover high absorption efficiency, thus enhancing the detection efficiency by more than an order of magnitude. Our cavity enhanced superconducting nanowire detectors are fully embedded in silicon nanophotonic circuits and efficiently detect single photons at telecom wavelengths. The detectors possess subnanosecond decay (∼120 ps) and recovery times (∼510 ps) and thus show potential for GHz count rates at low timing jitter (∼32 ps). The small absorption volume allows efficient threshold multiphoton detection.

Near-field coupling to nanophotonic waveguides enables absorption engineering of superconducting nanowires for efficient single photon detection on chip. The direct compatibility with photonic circuitry allows for using such devices in the framework of integrated optics and thus for exploiting the rich toolbox of nanophotonics for device characterization and optimization. We integrate superconducting single photon detectors with photonic circuitry made from different transparent materials. Both single and multi-photon capability can be achieved through variation of the nanowire width, as well as ultra-fast single photon counting with high detection rates by reducing the nanowire length.

We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 {\mu}A) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4*10^-19 W/(Hz^1/2) at 765 nm) and timing jitter (down to 23 ps)., Comment: 8 pages, 6 figures, Photonics West, Feb 2016, San Francisco, United States, SPIE Proceedings Volume 9750 - On-Chip Quantum Optics

Nanophotonic integrated circuits made from diamond-on-insulator templates are promising candidates for full-scale classical and quantum optical applications on a chip. For operation on a single photon level, both passive devices as well as light sources and single photon detectors co-implemented with a waveguide architecture are essential. Here, we present an in-depth investigation of the efficiency and timing characteristics of superconducting nanowire single-photon detectors (SNSPDs) situated directly atop diamond waveguides. Effects of nanowire length and critical current on the SNSPD performance are elaborated and true single-photon detection capability is confirmed by statistical measures.

In this investigation, we present a surface temperature determination method based on the luminescence characteristics of Ba3MgSi2O8:Eu2+, Mn2+. Simple optics utilizing only one RGB scientific CMOS camera makes this measurement technique easily applicable. Four different imaging methods were developed and are presented together with the corresponding calibration curves. We successfully utilized the methods to take a surface temperature distribution image on glass plates with a point heat source between them.

Imaging methods are an essential tool for improving processing of solar cells. Unfortunately, it is difficult to validate the imaging methods in detail. One focus of our work was to establish an approach by which one can assess the accuracy of the determination of the influence of defects via imaging on CIGS solar cells. The method is, however, not restricted to CIGS and should be easily transferable to other solar cell types, in particular other thin film technologies. The benefit of such a method is the possibility to validate and optimize imaging techniques and, in turn, improving tools to optimize solar cell material and processing of solar cells.

Product lifecycle costing offers substantial benefits for the profit analysis of various decision objects, especially products. Nevertheless the implementation of product lifecycle costing in practice faces several problems, that can be solved by using modern software tools. The article presents a solution for collecting and analyzing actual data. The proposed combination of the SAP R/3 ERP System and the SAP Business Information Warehouse for product lifecycle costing purposes is implemented and tested in practice. A concept for lifecycle planning is presented, based on the results of interviews about lifecycle planning in several enterprises. The concept is implemented as a prototype using the SAP Business Information Warehouse and SAP Strategic Enterprise Management. The software solutions described enable enterprises to continuously collect the actual data of a product lifecycle and to join actual and budget data for analysis.

The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices' critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip.

CIGS thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. These occur due to the film’s sensitivity to inhomogeneities during the manufacturing process and decreasing the electrical power output from a cell or module. In this study, we present infrared (IR) imaging and contactless loss analyses of defects contained in commercially manufactured thin film solar modules. We investigated different relations between the emitted IR-signal (using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (Voc) as well as the maximum power point (Pmpp). A simulation study, using the 2D finite element method (FEM), provides a deeper understanding as to the impact on electrical performance when defects are present on the cell or module.

Loss analysis on CIGS-modules are demonstrated by using contactless, imaging illuminated lock-in thermography (ILIT). Power dissipating defects, like shunts, were visualized in commercially manufactured test modules (30 × 30 cm2). The evaluations of the ILIT-measurements displayed a correlations with the loss in maximum output power and in open circuit voltage. 2D finite element simulations of the shunts confirmed the correlations. A further simulative parameter study gives a deep understanding of the influence of a shunt on the electrical performance in thin film modules. As ILIT is a contactless and fast method, it has the potential to become a powerful tool for in-line characterization. Furthermore, we consider this technique to be applicable also to other thin film module technologies, like CdTe, a-Si:H or organic photovoltaics.

In this paper, we present dual-channel lock-in phosphor thermometry, which offers an option of accurate and contactless temperature determination under high environmental noise. We studied YAG:Dy as thermographic phosphor at an excitation wavelength of 405 nm. We tested our approach under different experimental conditions with noise levels of about 550, 1060 and 2190 times larger than the excitation signal. With the dual-channel lock-in setup, we were able to suppress the strong noise in all cases and to reliably determine surface temperature using our optical measurements (error < 10 K). Additionally, the effect of signal to noise ratio, lock-in frequency and lock-in bandwidth on temperature determination accuracy was studied in this work.

Temperature-sensitive phosphors offer an option of accurate contactless temperature measurement. The method can be applied to a wide temperature range and up to more than 1500 K. In the current paper, phosphor thermometry based on four rare earths doped in YAG was studied. The standard excitation of thermographic phosphors is carried out with a Nd : YAG laser often at 355 or 266 nm. We examined the temperature dependent luminescence at an excitation wavelength of 405 nm. The excitation with visible blue light offers two main advantages: the excitation sources are rather cheap and they involve less safety issues. Accordingly, a variety of new application of such remote-thermometry would be possible. The results show that YAG : Dy and YAG : Sm may be well utilized for phosphor thermometry excited by a 405 nm diode laser.

A continuous improvement of resolution in mask-aligner lithography is sought after to meet the requirements of an ever decreasing minimum feature size in back-end processes. For periodic structures, utilizing the Talbot effect for lithography has emerged as a viable path. Here, by combining the Talbot effect with a continuous wave laser source emitting at 193 nm, we demonstrate successfully the fabrication of periodic arrays in silicon substrates with sub-micron feature sizes. The excellent coherence and the superior brilliance of this light source, compared to more traditional mercury lamps and excimer lasers as light source, enables the efficient beam shaping and a reduced minimum feature size at a fixed gap of 20 μm. We present a comprehensive study of proximity printing with this system, including simulations and selected experimental results of prints in up to the fourth Talbot plane. This printing technology can be used to manufacture optical metasurfaces, bio-sensor arrays, membranes, or microchannel plates.

We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

Bloch surface waves (BSWs) are sustained at the interface of a suitably designed one-dimensional (1D) dielectric photonic crystal and an ambient material. The elements that control the propagation of BSWs are defined by a spatially structured device layer on top of the 1D photonic crystal that locally changes the effective index of the BSW. An example of such an element is a focusing device that squeezes an incident BSW into a tiny space. However, the ability to focus BSWs is limited since the index contrast achievable with the device layer is usually only on the order of Δn≈0.1 for practical reasons. Conventional elements, e.g., discs or triangles, which rely on a photonic nanojet to focus BSWs, operate insufficiently at such a low index contrast. To solve this problem, we utilize an inverse photonic design strategy to attain functional elements that focus BSWs efficiently into spatial domains slightly smaller than half the wavelength. Selected examples of such functional elements are fabricated. Their ability to focus BSWs is experimentally verified by measuring the field distributions with a scanning near-field optical microscope. Our focusing elements are promising ingredients for a future generation of integrated photonic devices that rely on BSWs, e.g., to carry information, or lab-on-chip devices for specific sensing applications., Photonics: Controlling waves on a surface Light waves confined to travel at the interface between a photonic crystal and an ordinary material, known as Bloch Surface Waves (BSWs), can be focused and controlled in optical circuits by the patterning of an additional surface layer. Controlling BSWs constitutes a challenge but is vital for many applications in information transmission, acquisition, and processing. While traditional approaches based on conventional rational designs only led to a limited performance, researchers from Switzerland and Germany made now use of modern approaches for the computational photonic material design to manipulate BSWs. With suitably designed patterns they could demonstrate the focusing of BSWs down to the diffraction limit; and even below if the BSW was focused close to their element. This ability to focus BSWs unlocks a plethora of immediate applications for novel ‘lab-on-chip’ chemical sensing devices.

Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography.