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Radio frequency magnetron sputtered Ba"0"."6"5Sr"0"."3"5TiO"3 (BST) thin films were etched in CF"4/Ar/O"2 plasma by magnetically enhanced reactive ion etching technique. The etching characteristics of BST films were characterized in terms of microstructure and electrical properties. Atomic force microscopy and X-ray diffraction results indicate that the microstructure of the etched BST film is degraded because of the rugged surface and lowered intensities of BST (100), (110), (111) and (200) peaks compared to the unetched counterparts. Dielectric constant and dielectric dissipation of the unetched, etched and postannealed-after-etched BST film capacitors are 419, 346, 371, 0.018, 0.039 and 0.031 at 100kHz, respectively. The corresponding dielectric tunability, figure of merit and remnant polarization are 19.57%, 11.56%, 17.25%, 10.87, 2.96, 5.56, [email protected]/cm^2, 2.32 and [email protected]/cm^2 at 25V, respectively. The leakage current density of 1.75x10^-^4 A/cm^2 at 15V for the etched BST capacitor is over two orders of magnitude higher than 1.28x10^-^6 A/cm^2 for the unetched capacitor, while leakage current density of the postannealed-after-etched capacitor decreases slightly. It means that the electrical properties of the etched BST film are deteriorated due to the CF"4/Ar/O"2 plasma-induced damage. Furthermore, the damage is alleviated, and the degraded microstructure and electrical properties are partially recovered after the etched BST film is postannealed at 923K for 20min under a flowing O"2 ambience.

Wind-driven triboelectric nanogenerators (TENGs) play an important role in harvesting energy from ambient environments. Compared to single-side-fixed triboelectric nanogenerator (STENG) arrays for harvesting single-pathway wind energy, double-side-fixed triboelectric nanogenerator (DTENG) arrays are developed to harvest bidirectional wind energy. Electrical performances of the STENG and DTENG can be improved due to sticky, abrasive, and electrical properties of the Ti buffer layers among Al, polytetrafluoroethylene (PTFE), and polyimide (Kapton), configuring in triboelectric PTFE/Ti/Al and Al/Ti/Kapton/Ti/Al thin films. Short-circuit current (I SC), open-circuit voltage (V OC), and frequencies of the STENG and DTENG increase with increasing wind velocity ranging from 9.2 to 18.4 m s21, revealing that the moderate I SC, V OC, frequencies, and output powers of the STENG and DTENG reach 67 μA, 57 μA, 334 V, 296 V, 173 Hz, 162 Hz, 5.5 mW and 3.4 mW with a matched load of 4 MΩ at airflow rate of 15.9 m s21, respectively. Compared with counterparts of the single-pathway-harvested STENG arrays, the I SC, durability, and stability of the bidirectional-harvested DTENG can be dramatically improved by a 4 3 1 array connected in parallel because of the improved device configuration, stickiness, and abrasion by adhering Ti buffer layers. The durable DTENG arrays present a step toward practical applications in harvesting bidirectional wind energy for self-powered systems and wireless sensors.

The sequential resonant tunneling in La0.5Sr0.5CoO3−δ (LSCO) semiconductor quantum dots (QDs) arrays were observed by current-voltage measurements under room temperature. A series of spikelike current peaks are found, which are resulted from the accumulation and depletion of electrons tunneling through the QDs embedded in insulated barriers. Temperature dependent onset-voltage blueshift and number variation in current peaks are also observed. These results confirm the size-induced metal-to-semiconductor transition in LSCO.