1. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs
- Author
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Xinran Huang, Lingling Li, Junting Chen, Chengcai Wang, Zuoheng Jiang, Mengyuan Hua, and Kevin J. Chen
- Subjects
Stress (mechanics) ,Materials science ,law ,business.industry ,Transistor ,Schottky diode ,Optoelectronics ,Electrical and Electronic Engineering ,business ,On resistance ,law.invention ,Degradation (telecommunications) - Abstract
In this work, the impacts of OFF-state gate bias (VGS,OFF) on dynamic on-resistance (RON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron-mobility transistors (HEMTs). Double-pulse tester (DPT) and PIV system are adopted to evaluate the dynamic RON with various OFF-state gate and drain bias (VDS,OFF) under hard- and soft-switching conditions. More negative VGS,OFF can aggravate the dynamic RON degradation under both soft- and hard-switching, especially when switching with a high VDS,OFF. The impacts of VGS,OFF on switching transients and OFF-state stress are investigated separately to reveal the underlying mechanisms, which are found to be associated with the generation and movements of holes. OFF-state gate bias of the voltage-driving scheme needs to be carefully considered according to the identified mechanisms in terms of dynamic on-resistance degradation.
- Published
- 2022