1. Ultra-high dielectric tuning performance and double-set resistive switching effect achieved on the Bi2NiMnO6 thin film prepared by sol–gel method
- Author
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Wen-Min Zhong, Wan-Peng Li, Xin-Gui Tang, Yan-Ping Jiang, Min-Lin Deng, and Qiu-Xiang Liu
- Subjects
Materials science ,business.industry ,Dielectric ,Memristor ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,law.invention ,Biomaterials ,Dipole ,Capacitor ,Colloid and Surface Chemistry ,Modulation ,law ,Electric field ,Optoelectronics ,Thin film ,business ,Sol-gel - Abstract
With the development of mobile terminals, tunable capacitors for signal processing and memristors for calculation have received a lot of attention. Combining a tunable capacitor and a memristor can improve the performance of mobile terminals and reduce space requirements. In this article, we report on Bi2NiMnO6 (BNMO) films with high dielectric tuning and nonvolatile resistive switching (RS) effects. The BNMO films are fabricated by the sol–gel method and annealed at different temperatures. It exhibits a dielectric tunability of up to 92%. This high dielectric tunability may be attributed to the modulation of the interface dipole by the electric field. When an electric field is applied, the interface dipole of the BNMO film is far away from the interface of the BNMO, and then forms a conductive channel where anions and cations are mixed. The BNMO films are found to have a double-set type effect due to its dielectric tunability properties. This work introduces an ultra-high dielectric tuning material and a new type of RS effect on BNMO thin film, which can achieve tuning and memory behavior on a device.
- Published
- 2022