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To improve the thermal insulation performance of windows, lowering the electrical resistivity of the Ag-based multilayer structure in low-emissivity (low-E) glass is necessary. We have reported that the electrical resistivity of the structure can be reduced from 4.4 μΩ·cm to 3.4 μΩ·cm by inserting TiO2 in glass/TiO2/ZnO/Ag deposited by sputtering method. In this study, Nb2O5 and ZrO2 were selected as the lowermost layers and their effects on electrical resistivity were investigated. When the lowermost layer was Nb2O5, the resistivity became 3.4 μΩ·cm; however, the resistivity did not improve when the lowermost layer was ZrO2. Based on the X-ray diffraction, atomic force microscopy, and transmission electron microscopy results, we determined the factors correlated with electrical resistivity and elucidated the suitable conditions of the lowermost layer for reducing the electrical resistivity of the Ag-based multilayer structure in low-E glass.

We investigate the electron-spin injection dynamics via tunneling from an In0.1Ga0.9As quantum well (QW) to In0.5Ga0.5As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs. (C) 2014 AIP Publishing LLC.