Search

Pulse laser of 1064 nm damage studies are performed in two kinds of material. One is the MgO:LiNbO3 for using in THz parameter generator system, and another is the Si-GaAs material for using in THz photoconductive antenna. All the experiments were performed in the bulk of material, which irradiated by Nd:YAG Q-switch laser beam with nanosecond pulse. In the case of the LiNbO3, the damage is associated with both the self-focusing inside the material, and the thermal damage on the face. As for the GaAs, the material damage can be divided into two types of the un-reparable and reparable.

In this paper, we reported the delay-time measurement experiments for a biased semi-insulating gallium arsenide photoconductive antenna, triggered by laser pulse, and performed at the nonlinear model. The electromagnetic wave output character dependence of the delay-time is analyzed by using the Fourier transforms spectrum. The delay-time at the excited laser pulse of 532 nm and 1064 nm were measured. We observed a huge delay-time of hundreds microsecond when triggered by 1064 nm laser at the specific biased-voltage conditions. The analysis indicated the huge delay-time relate to the photogenerated carriers translation between the different energy states of EL2 deep energy level.