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Aims and Method The purpose of this review was to establish whether the prescription of antipsychotic medication in HMP Low Newton was safe, rational and consistent with current best practice. A search of the electronic healthcare records was performed on 14 March 2018 to identify all the women in the prison who were prescribed antipsychotic medication, and then data were collected from the records. Results A total of 46 out of 336 prisoners (13.7%) had been prescribed antipsychotic medications; 29 of the 46 patients (84.8%) were also prescribed other psychotropic medications at the same time. Quetiapine was the most frequently prescribed antipsychotic and was also the most likely to be prescribed for off-label indications. Less than one-third of all antipsychotic prescriptions were for psychotic disorders. Clinical implications The rationale for prescribing all antipsychotic medication, especially for off-label indications, should be clearly documented and reviewed regularly within the prison by the mental health team and psychiatrist.

In this work, a heterostructure obtained by vacuum evaporation of a strong molecular n-dopant, [RuCp*(mes)]2 , onto black phosphorus (BP) is reported, along with the systematic investigation of the interfacial structure and properties by various in situ characterization techniques. Ultraviolet photoelectron spectra (UPS) showed a large decrease in the work function of BP and a new peak within the bandgap, which is attributed to electron transfer from dopants to the underlying BP. The electrons trapped at the interface act as hole traps and induce photogating effect so that a photodetector based on BP-organoruthenium complex heterostructure demonstrates a photoresponsivity of 5.5 mA W-1 and an EQE of 1.3 % at 515 nm, a tenfold improvement compared to the pristine BP device.

This review summarizes experiences at operational centers to forecast tropical cyclone (TC) intensity change as presented to the International Workshop on Tropical Cyclones (IWTC-9) in Hawaii in 2018. Some operational forecast centers have been able to leverage advances in intensity guidance to increase forecast skill, albeit incrementally, while others have struggled to make any significant improvements. Rapid intensity changes continue to present major challenges to operational centers and individual difficult cases illustrate the forecasting challenges. It is noteworthy that the realization of a recommendation from IWTC-8 in 2014, to adapt guidance initially developed for the North Atlantic and North-East Pacific to other basins, has led to improved forecast skill of some agencies. Recent worldwide difficult cases are presented so that the research community can further investigate, potentially leading to improved intensity forecasts when similar cases are observed in the future. Keywords: tropical cyclone, intensity, change, rapid intensification

While metal-halide perovskite light-emitting diodes (PeLEDs) hold the potential for a new generation of display and lighting technology, their slow operation speed and response time limit their application scope. Here, high-speed PeLEDs driven by nanosecond electrical pulses with a rise time of 1.2 ns are reported with a maximum radiance of approximately 480 kW sr-1 m-2 at 8.3 kA cm-2 , and an external quantum efficiency (EQE) of 1% at approximately 10 kA cm-2 , through improved device configuration designs and material considerations. Enabled by the fast operation of PeLEDs, the temporal response provides access to transient charge carrier dynamics under electrical excitation, revealing several new electroluminescence quenching pathways. Finally, integrated distributed feedback (DFB) gratings are explored, which facilitate more directional light emission with a maximum radiance of approximately 1200 kW sr-1 m-2 at 8.5 kA cm-2 , a more than two-fold enhancement to forward radiation output.

The role electron-transport layers (ETLs) play in perovskite solar cells (PSCs) is still widely debated. Conduction band alignment at the perovskite/ETL interface has been suggested to be an import...

Surface doping of graphene with redox-active molecules is an effective approach to tune its electrical properties, in particular for application as transparent electrodes. Here we present a study and application of surface n-doping of graphene with the molecular reductant (pentamethylcyclopentadienyl)(1,3,5-trimethylbenzene)ruthenium dimer ([RuCp*Mes]2). Photoemission spectroscopy and carrier-transport measurements are combined to investigate doping-induced changes in the electronic structure of the interface between graphene and phenyldi(pyren-2-yl)phosphine oxide (POPy2), which is a low-electron-affinity material that has been used as an electron-transport layer (ETL) in organic light-emitting diodes. Photoemission and Hall voltage measurements confirm the n-doping of graphene. Doping with 1–2 nm of [RuCp*Mes]2 reduces the graphene work function by 1.8 eV and the electron injection barrier by more than 1 eV, enhancing electron injection into POPy2 by several orders of magnitude. Graphene/POPy2/Al diodes...

Small-molecule emitters that are phosphorescent or exhibit thermally activated delayed fluorescence have permitted, when doped into an appropriate host, the fabrication of organic light-emitting diodes with internal quantum efficiencies approaching 100% and external quantum efficiencies above 25%. However, by omission of the host materials, device fabrication can potentially be simplified. Host-free devices, which utilize a neat thin film of the emitter as the emissive layer, often suffer from issues arising from aggregation, such as luminescence quenching and spectral shift, and in many cases show poor roll-off in efficiency with luminance. Self-host materials – polymers or dendrimers that contain both emitter-like and host-like structural attributes – are one approach to host-free devices. Despite the development of a large number of such materials, only a few have shown external quantum efficiencies in self-host devices that approach those of traditional host:guest emissive layers (ca. 20%). In this review, we attempt to critically analyze the structures of representative examples of materials developed to date in an attempt to correlate their physical properties to electroluminescent properties. It is hoped that our survey will help to identify the design problems, as well as providing directions towards development of new polymers/dendrimers that perform as better self-host materials.

Here we report a record thermoelectric power factor of up to 160 $\mu$ W m-1 K-2 for the conjugated polymer poly(3-hexylthiophene) (P3HT). This result is achieved through the combination of high-temperature rubbing of thin films together with the use of a large molybdenum dithiolene p-dopant with a high electron affinity. Comparison of the UV-vis-NIR spectra of the chemically doped samples to electrochemically oxidized material reveals an oxidation level of 10%, i.e. one polaron for every 10 repeat units. The high power factor arises due to an increase in the charge-carrier mobility and hence electrical conductivity along the rubbing direction. We conclude that P3HT, with its facile synthesis and outstanding processability, should not be ruled out as a potential thermoelectric material.

The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next-generation electronic and optoelectronic devices. In this study, n- and p-doping of highly uniform large-area trilayer WSe2 is achieved by treatment with solutions of molecular reductants and oxidants. The sign and extent of doping can be conveniently controlled by the redox potential of the (metal−)organic molecules, the concentration of dopant solutions, and the treatment time. Threshold voltage shifts, the direction of which depends on whether a p- or n-dopant is used, and tunable channel current are observed in doped WSe2 field-effect transistors. Detailed physical characterization including photoemission (ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy) and Raman spectroscopy provides fundamental understanding of the underlying mechanism. The origin of the doping is the electron-transfer reactions between molecular dopants and 2D semiconductors and results in a sh...

Employment of thin perovskite shells and metal halides as surface-passivants for colloidal quantum dots (CQDs) has been an important, recent development in CQD optoelectronics. These have opened the route to single-step-deposited high-performing CQD solar cells. These promising architectures employ a CQD hole-transporting layer (HTL) whose intrinsically shallow Fermi level (EF) restricts band-bending at maximum power-point during solar cell operation limiting charge collection. Here, we demonstrate a generalized approach to effectively balance band-edge energy levels of the main CQD absorber and charge-transport layer for these high-performance solar cells. Briefly soaking the CQD HTL in a solution of the metal–organic p-dopant, molybdenum tris(1-(trifluoroacetyl)-2-(trifluoromethyl)ethane-1,2-dithiolene), effectively deepens its Fermi level, resulting in enhanced band bending at the HTL:absorber junction. This blocks the back-flow of photogenerated electrons, leading to enhanced photocurrent and fill fac...

The remarkable optoelectronic properties of metal halide perovskites have generated intense research interest over the last few years. The ability to control and manipulate the crystallisation and stoichiometry of perovskite thin-films has allowed for impressive strides in the development of highly efficient perovskite solar cells. However, being able to effectively modify the interfaces of metal halide perovskites, and to controllably p- or n-type dope the surfaces, may be key to further improvements in the efficiency and long-term stability of these devices. In this study, we use surface doping of the mixed-cation, mixed-halide perovskite FA0.85MA0.15Pb(I0.85Br0.15)3 (FA – formamidinium; MA – methylammonium) to improve the hole extraction from the perovskite solar cell. By treating the surface of the perovskite film with a strongly oxidizing molybdenum tris(dithiolene) complex, we achieve a shift in the work function that is indicative of p-doping, and a twofold increase in the total conductivity throughout the film. We probe the associated interfacial chemistry through photoelectron and solid-state nuclear magnetic resonance spectroscopies and confirm that charge-transfer occurs between the perovskite and dopant complex. The resulting p-doped interface constitutes a homojunction with increased hole-selectivity. With charge-selective layers, we show that this surface doping enhances the device performance of perovskite solar cells resulting in steady-state efficiencies approaching 21%. Finally, we demonstrate that a surface treatment with this dopant produces the same effect as the commonly employed additive 4-tert butylpyridine (tBP), allowing us to achieve “tBP-free” devices with steady-state efficiencies of over 20%, and enhanced thermal stability as compared to devices processed using tBP. Our findings therefore demonstrate that molecular doping is a feasible route to tune and control the surface properties of metal halide perovskites.

Thermally activated delayed fluorescent (TADF) materials are advantageous as emitters in organic light-emitting diodes (OLEDs) due to their ability to utilize all excited states formed by charge recombination for light emission, potentially leading to 100% internal quantum efficiency. As in conventional fluorescent or phosphorescent OLEDs, TADF emitters are commonly doped at a relatively low concentration in a host matrix. However, increasing evidence suggests that balanced ambipolar transport properties and small aggregation-induced fluorescence quenching allow TADF emitters to be used alone in so-called host-free OLEDs. Here, we report host-free OLEDs in which the emissive layers (EMLs) consist solely of a yellow-green-emitting TADF compound, 5,5'-(2,3,5,6-tetra(carbazol-9-yl)-1,4-phenylene)bis(2-(4-( tert-butyl)phenyl)-1,3,4-oxadiazole), TCZPBOX. Devices with this host-free EML yield a maximum external quantum efficiency (EQE) of 21%, current efficacy (CE) of 73 cd/A, and power efficacy (PE) of 79 lm/W at a luminance of 10 cd/m

The combination of inorganic and organic semiconductors in a heterojunction is considered a promising approach to overcome limitations of each individual material class. However, to date only few examples of improved (opto-)electronic functionality have been realized with such hybrid heterojunctions. The key to unraveling the full potential offered by inorganic/organic semiconductor heterojunctions is the ability to deliberately control the interfacial electronic energy levels. Here, a universal approach to adjust the offset between the energy levels at inorganic/organic semiconductor interfaces is demonstrated: the interlayer method. A monolayer-thick interlayer comprising strong electron donor or acceptor molecules is inserted between the two semiconductors and alters the energy level alignment due to charge transfer with the inorganic semiconductor. The general applicability of this method by tuning the energy levels of hydrogenated silicon relative to those of vacuum-processed films of a molecular semiconductor as well as solution-processed films of a polymer semiconductor is exemplified, and is shown that the energy level offset can be changed by up to 1.8 eV. This approach can be used to adjust the energy levels at the junction of a desired material pair at will, and thus paves the way for novel functionalities of optoelectronic devices.

In recent years colloidal quantum dot (CQD) photovoltaics have developed rapidly because of novel device architectures and robust surface passivation schemes. Achieving controlled net doping remains an important unsolved challenge for this field. Herein we present a general molecular doping platform for CQD solids employing a library of metal–organic complexes. Low effective ionization energy and high electron affinity complexes are shown to produce n- and p-doped CQD solids. We demonstrate the obvious advantage in solar cells by p-doping the CQD absorber layer. Employing photoemission spectroscopy, we identify two doping concentration regimes: lower concentrations lead to efficient doping, while higher concentrations also cause large surface dipoles creating energy barriers to carrier flow. Utilizing the lower concentration regime, we remove midgap electrons leading to 25% enhancement in the power conversion efficiency relative to undoped cells. Given the vast number of available metal–organic complexes,...

Transparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as electrode materials in organic-semiconductor devices. The properties of the inorganic-organic interface-the offset between the TCO Fermi level and the relevant transport level, the extent to which the organic semiconductor can wet the oxide surface, and the influence of the surface on semiconductor morphology-significantly affect device performance. This review surveys the literature on TCO modification with phosphonic acids (PAs), which has increasingly been used to engineer these interfacial properties. The first part outlines the relevance of TCO surface modification to organic electronics, surveys methods for the synthesis of PAs, discusses the modes by which they can bind to TCO surfaces, and compares PAs to alternative organic surface modifiers. The next section discusses methods of PA monolayer deposition, the kinetics of monolayer formation, and structural evidence regarding molecular orientation on TCOs. The next sections discuss TCO work-function modification using PAs, tuning of TCO surface energy using PAs, and initiation of polymerizations from TCO-tethered PAs. Finally, studies that examine the use of PA-modified TCOs in organic light-emitting diodes and organic photovoltaics are compared.

The performance of lead-halide perovskite light-emitting diodes (LEDs) has increased rapidly in recent years. However, most reports feature devices operated at relatively small current densities ( 10% to current densities as high as 2000 mA cm-2 ), and tenfold increase in operational lifetime (when driven at 100 mA cm-2 ). Furthermore, with proper thermal management, a maximum current density of 2.5 kA cm-2 and an EQE of ≈1% at 1 kA cm-2 are shown using electrical pulses, which represents an important milestone toward electrically driven perovskite lasers.

Electrical doping of organic semiconductors increases conductivity and reduces injection barriers from electrode materials, both of which effects can improve the performance of organic light-emitting diodes (OLEDs). However, the low electron affinities of typical OLED electron-transport materials make the identification of suitable n-dopants particularly challenging; electropositive metals such as the alkali metals are not easily handled and form monoatomic ions that are rather mobile in host materials, whereas molecular dopants that operate as simple one-electron reductants must have low ionization energies, which leads to severe air sensitivity. This presentation will discuss approaches to circumventing this issue by coupling electron transfer to other chemical reactivity. In particular, dimers formed by certain highly reducing organometallic sandwich compounds and organic radicals can be handled in air, yet have effective reducing potentials, corresponding to formation of the corresponding monomeric cations and contribution of two electrons to the semiconductor, of ca. –2.0 V vs. ferrocene. These values fall a little short of what is required for typical OLED materials; approaches to further extending the doping reach of these dimers will be described. One such approach involving photoirradiation of a dimer:semiconductor blend leads to metastable doping of a material with a redox potential of –2.24 V, which allows the fabrication of efficient OLEDs in which even high-workfunction electrodes, such as indium tin oxide, can be used as electron-injection contacts.

The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

Chemical doping of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient organic electronic devices. Although a variety of stable molecular p-dopants have been developed and successfully deployed in devices in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinity are still elusive. Here we demonstrate that photo-activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond the thermodynamic reach of the dimer’s effective reducing strength. Electron-transport layers doped in this manner are used to fabricate high-efficiency organic light-emitting diodes. Our strategy thus enables a new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic contacts to, organic semiconductors with very low electron affinity. The activation of cleavable organometallic dimers upon exposure to ultraviolet radiation allows air-stable n-type doping of organic materials with electron affinity lower than the expected thermodynamic reducing strength of the dimers.

Organic solar cells demonstrate external quantum efficiencies and fill factors approaching those of conventional photovoltaic technologies. However, as compared with the optical gap of the absorber materials, their open-circuit voltage is much lower, largely due to the presence of significant non-radiative recombination. Here, we study a large data set of published and new material combinations and find that non-radiative voltage losses decrease with increasing charge-transfer-state energies. This observation is explained by considering non-radiative charge-transfer-state decay as electron transfer in the Marcus inverted regime, being facilitated by a common skeletal molecular vibrational mode. Our results suggest an intrinsic link between non-radiative voltage losses and electron-vibration coupling, indicating that these losses are unavoidable. Accordingly, the theoretical upper limit for the power conversion efficiency of single-junction organic solar cells would be reduced to about 25.5% and the optimal optical gap increases to (1.45-1.65) eV, that is, (0.2-0.3) eV higher than for technologies with minimized non-radiative voltage losses.

Stable electrical doping of organic semiconductors is fundamental for the functionality of high performance devices. It is known that dopants can be subjected to strong diffusion in certain organic semiconductors. This work studies the impact of operating conditions on thin films of the polymer poly(3-hexylthiophene) (P3HT) and the small molecule Spiro-MeOTAD, doped with two differently sized p-type dopants. The negatively charged dopants can drift upon application of an electric field in thin films of doped P3HT over surprisingly large distances. This drift is not observed in the small molecule Spiro-MeOTAD. Upon the dopants' directional movement in P3HT, a dedoped region forms at the negatively biased electrode, increasing the overall resistance of the thin film. In addition to electrical measurements, optical microscopy, spatially resolved infrared spectroscopy, and scanning Kelvin probe microscopy are used to investigate the drift of dopants. Dopant mobilities of 10-9 to 10-8 cm2 V-1 s-1 are estimated. This drift over several micrometers is reversible and can be controlled. Furthermore, this study presents a novel memory device to illustrate the applicability of this effect. The results emphasize the importance of dynamic processes under operating conditions that must be considered even for single doped layers.

Judicious substitution of chalcogenopyrylium-terminated polymethine dyes with sterically demanding groups ameliorates the deleterious effects of aggregation on the optical properties of these materials in the solid state, facilitating high-number-density films that exhibit an unprecedented combination of nonlinear optical properties with low linear and nonlinear losses.

Organic materials possess many key attributes that make them suitable for exploitation in all-optical signal processing applications including facile tunability of their optical properties, strong and ultrafast nonlinear optical response, and potential for integration into device structures. In this perspective, we present molecular design guidelines for organic chromophores that could serve as the active constituents for such materials. Using a relatively simple model, a candidate class of chromophores, namely cyanine-like polymethines, is identified based on promising microscopic nonlinear optical properties in the near-IR spectral region. The challenges associated with translating these microscopic properties into materials with macroscopic properties suitable for device applications are presented along with molecular engineering approaches for overcoming these hurdles.

In this talk, we will discuss recent advances in the science and engineering of organic light-emitting diodes (OLEDs). First, we will focus on materials in which light emission involves the process of thermally activated delayed fluorescence (TADF). In these materials, triplet excited states can convert into optically emissive singlet excited states by reverse intersystem crossing, allowing for nearly 100% internal quantum efficiency. This process can be used to design a new class of materials that are all organic, offering a lower cost alternative to conventional electrophosphorescent materials that contain heavy and expensive elements such as Pt and Ir. We will discuss molecular design strategies and present examples of materials that can be used as emitters or hosts in the emissive layer. In a second part of this talk, we will review recent progress in fabricating OLEDs on shape memory polymer substrates (SMPs). SMPs are mechanically active, smart materials that can exhibit a significant drop in modulus once an external stimulus such as temperature is applied. In their rubbery state upon heating, the SMP can be easily deformed by external stresses into a temporary geometric configuration that can be retained even after the stress is removed by cooling the SMP to below the glass transition temperature. Reheating the SMP causes strain relaxation within the polymer network and induces recovery of its original shape. We will discuss how these unique mechanical properties can also be extended to a new class of OLEDs.

We report on high-mobility top-gate organic field-effect transistors (OFETs) and complementary-like inverters fabricated with a solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative as the channel semiconductor and a CYTOP/Al2O3 bilayer as the gate dielectric. The OFETs showed ambipolar behavior with average electron and hole mobility values of 1.2 and 0.01 cm2 V−1 s−1, respectively. Complementary-like inverters fabricated with two ambipolar OFETs showed hysteresis-free voltage transfer characteristics with negligible variations of switching threshold voltages and yielded very high DC gain values of more than 90 V/V (up to 122 V/V) at a supply voltage of 25 V.

High-efficiency organic light-emitting devices (OLEDs) were fabricated in which solution-processed ambipolar blends of hole- and electron-transport polymer hosts doped with a green-emitting iridium complex are sandwiched between a photocrosslinked hole-transporting layer and a vacuum-deposited electron-transporting layer. The ambipolar host blends consist of blends of bis-oxadiazole-functionalized poly(norbornene) electron-transport materials and poly(N-vinylcarbazole). For the best device examined, an external quantum efficiency of 13.6% and a maximum luminous efficiency of 44.6 cd/A at 1000 cd/m2 with a turn-on voltage of 5.9 V were obtained.

Emitters displaying thermally activated delayed fluorescence (TADF) can lead to highly efficient organic light-emitting diodes (OLEDs). Such emitters are usually incorporated into the emissive layer (EML) at a relatively low concentration (

The contact resistance in pentacene organic field-effect transistors (OFETs) is found to be significantly reduced by selectively doping the organic semiconductor region beneath the source/drain electrodes. A 10 nm co-evaporated (1:1 ratio) layer of molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] and pentacene was deposited under the metal electrodes for this purpose. The width-normalized contact resistance (varying channel lengths of 25–200 μm used for the study) in contact-doped devices was lowered significantly (0.5 kΩ-cm) in comparison to reference devices (3.4 kΩ-cm) in the accumulation regime (VGS = −30 V). Doping of the contacts did not affect the stability of the devices under continuous bias stress significantly.

Dying by Design To make optical-switching applications a reality, losses from scattering and other absorption processes have to be minimized. Hales et al. (p. 1485 , published online 18 February; see the Perspective by Haque and Nelson ) present a strategy to explore the refraction and absorption properties of a group of cyanine dyes for designing materials that have properties corresponding to technologically interesting telecommunications windows. The optical properties of the cyanine molecule was controlled by adding heavy chalcogen atoms (selenium) into the end groups of the molecular structure. While producing a series of molecules meeting criteria for feasible application, the work also demonstrates a route to improve the performance of nonlinear optical materials.

A new relative of pentacene: The dialkynylated tetraazapentacene (see figure) was prepared by a two-step synthesis from the corresponding quinone derivative. The heteroacene is an air-stable, dark-blue, crystalline material and is of great interest as a potential organic n-electron-transport material.

A 7 times 11 pixel blue OLED display was fabricated using a patterned indium-tin-oxide (ITO) substrate. The fabrication process for an M times N pixel organic light-emitting diode (OLED) video display including an electrical insulating layer and a physical pixel separator layer is presented. An efficient and thermally stable blue fluorescent organic material, 6,6'-bis((2-p -biphenyl)-4-phenylquinoline) (B2PPQ), was used in combination with an evaporated hole-transport small molecule with a high ionization potential.

We demonstrate top-gate organic field-effect transistors (OFETs) with a bilayer gate dielectric and doped contacts fabricated on shape-memory polymer (SMP) substrates. SMPs exhibit large variations in Young’s modulus dependent on temperature and have the ability to fix two or more geometric configurations when a proper stimulus is applied. These unique properties make SMPs desirable for three-dimensional shape applications of OFETs. The electrical properties of OFETs on SMP substrates are presented and compared to those of OFETs on traditional glass substrates.

The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach., Hybrid inorganic-organic structures can overcome the limits of inorganic semiconductor light emitting devices but the energy level offset is an obstacle. Here, Schlesinger et al. lower the ZnO work function with an organometallic donor monolayer and enhance the radiative emission of the hybrid structure.

Photonic technologies operate by the optical processing and transmission of information and require a variety of materials with appropriate properties to facilitate the modulation of light. Polymers containing organic nonlinear optical (NLO) chromophores allow the modulation of the phase, the state of polarization, and/or the frequency of light beams, as required for the optical encoding, transmission, and routing of information. Both secondand third-order NLO effects are potentially useful [1]. Materials with large secondand third-order nonlinearities can be useful for the doubling and tripling, respectively, of the frequency of optical signals. They can also be used for routing and switching applications in which NLO effects involving the ability to vary the refractive indices of the materials using an applied electric field are important. The refractive index of second-order NLO materials is dependent on electric field; this effect is known as the linear electro-optic (EO) or Pockels effect. Materials with large EO coefficients can be used for the fabrication of ultrafast low-power EO modulators that can be integrated with electronics. In third-order NLO materials, the refractive index is dependent on the intensity of light and so can bemodulated with an optical control pulse, negating the need to integrate electronics directly with the NLO material and facilitating all-optical modulation, which holds promise for ultrafast signal processing, potentially enabling much higher bandwidth communications. In organic materials with large secondor third-order nonlinearities, these nonlinearities are largely due to the interaction of light with conjugated p-systems. Here a simple model is described that has helped to provide design strategies for the optimization of second-order and third-order nonlinear optical effects in quasi-linear organic molecules.

This study investigates electron transport and distribution of an organometallic dimer-based dopant (RuCp*Mes)2 in benchmarked P(NDI2OD-T2) films, in which electron transport is not affected by deep traps originating from atmospheric contaminants. The electron mobility of P(NDI2OD-T2) can be enhanced by >10‚ in diodes with reduced thermal activation energy using (RuCp*Mes)2 dopants, which is rationalized by the filling up of tail electronic states by doping induced carriers. n-doping with (RuCp*Mes)2 can also improve electron injection at Schottky contacts in nanoscale transport measurements confirmed by conducting atomic force microscopy. The results suggest that the (RuCp*Mes)2 dopants are homogenously distributed throughout the P(NDI2OD-T2) film, at least laterally, at moderate doping concentrations. Thus, these results demonstrate an opportunity of using air-stable molecular n-doping to modulate charge transport properties for solution-processed organic optoelectronic devices.

Doping of graphene is a viable route toward enhancing its electrical conductivity and modulating its work function for a wide range of technological applications. In this work, the authors demonstrate facile, solution-based, noncovalent surface doping of few-layer graphene (FLG) using a series of molecular metal-organic and organic species of varying n- and p-type doping strengths. In doing so, the authors tune the electronic, optical, and transport properties of FLG. The authors modulate the work function of graphene over a range of 2.4 eV (from 2.9 to 5.3 eV)—unprecedented for solution-based doping—via surface electron transfer. A substantial improvement of the conductivity of FLG is attributed to increasing carrier density, slightly offset by a minor reduction of mobility via Coulomb scattering. The mobility of single layer graphene has been reported to decrease significantly more via similar surface doping than FLG, which has the ability to screen buried layers. The dopant dosage influences the properties of FLG and reveals an optimal window of dopant coverage for the best transport properties, wherein dopant molecules aggregate into small and isolated clusters on the surface of FLG. This study shows how soluble molecular dopants can easily and effectively tune the work function and improve the optoelectronic properties of graphene.

By preventing aggregation of polymethine molecules at high number density, we have developed organic materials with large third-order nonlinearities and low nonlinear absorption in the near-infrared thereby enabling demonstration of an all-optical signal processing application.

An organic electroluminescent device with a luminous efficiency of 20 Im/W, at 14 cd/m/sup 2/, and an external quantum efficiency of 4.6% has been fabricated using a high T/sub g/ hole transport polymer, a small molecule emission layer, and a LiF/Al cathode. The device quantum efficiency can be increased by tuning the ionization potential of the hole-transport moieties. When tested under pulsed voltage mode, in air at room temperature, and without any encapsulation, the device showed a high peak brightness of 4.4/spl times/10/sup 6/ cd/m/sup 2/ at 100 A/cm/sup 2/ and an efficiency of 4.4 cd/A.

Two-photon excitation provides a means of activating chemical or physical processes with high spatial resolution in three dimensions and has made possible the development of three-dimensional fluorescence imaging1, optical data storage2,3 and lithographic microfabrication4,5,6. These applications take advantage of the fact that the two-photon absorption probability depends quadratically on intensity, so under tight-focusing conditions, the absorption is confined at the focus to a volume of order λ3 (where λ is the laser wavelength). Any subsequent process, such as fluorescence or a photoinduced chemical reaction, is also localized in this small volume. Although three-dimensional data storage and microfabrication have been illustrated using two-photon-initiated polymerization of resins incorporating conventional ultraviolet-absorbing initiators, such photopolymer systems exhibit low photosensitivity as the initiators have small two-photon absorption cross-sections (δ). Consequently, this approach requires high laser power, and its widespread use remains impractical. Here we report on a class of π;-conjugated compounds that exhibit large δ (as high as 1, 250 × 10−50 cm4 s per photon) and enhanced two-photon sensitivity relative to ultraviolet initiators. Two-photon excitable resins based on these new initiators have been developed and used to demonstrate a scheme for three-dimensional data storage which permits fluorescent and refractive read-out, and the fabrication of three-dimensional micro-optical and micromechanical structures, including photonic-bandgap-type structures7.

A family of photorefractive polymer composites has been developed that enable high-performance device operation at a wavelength of 975nm. This constitutes a major extension into the near-infrared spectral region for the operation of all-organic photorefractive devices. Utilizing our photorefractive materials, we demonstrate large net two-beam coupling gain of more than 100cm−1, 60% diffraction efficiency in four-wave mixing experiments, and a fast response time of 33ms, at an irradiance of 1W∕cm2.

Copolymers with a triscarbazole hole-transport group and an oxetane or benzocyclobutene crosslinkable group can be readily thermally crosslinked on timescales of 30 min or less, with rapid thermal processing (RTP) being highly effective for this purpose. Devices with RTP-crosslinked hole-transport layers and spin-coated emissive layers exhibit high external quantum efficiencies of up to 15%.

Organic light-emitting diodes (OLEDs) continue to generate a lot of interest due to their role in flexible displays and in solid-state lighting. While continuous improvements have been achieved in performance, there is still a continuous need for new materials and device architectures that will comply with the future needs of large-area displays with increasing resolution, and with the lower cost targets of white-light sources.

A new solution-processable small-molecule containing electron-poor naphthalene diimide and tetrazine moieties has been synthesized. The optimized spin-coated n-channel OFETs on glass substrate shows electron mobility value up to 0.15 cm(2) V(-1) s(-1) . Inkjet-printed OFETs are fabricated in ambient atmosphere on flexible plastic substrates, which exhibits an electron mobility value up to 0.17 cm(2) V(-1) s(-1) and also shows excellent environmental and operational stability.

The performance of organic light-emitting diode devices with a spin-coated hole-transporting layer and a thermally deposited emissive layer consisting of a bis-sulfone small molecule, as a host for the blue phosphorescent emitter will be presented.

Organic electron-transporting materials are essential for the fabrication of organic p-n junctions, photovoltaic cells, n-channel field-effect transistors, and complementary logic circuits. Rylene diimides are a robust, versatile class of polycyclic aromatic electron-transport materials with excellent thermal and oxidative stability, high electron affinities, and, in many cases, high electron mobilities; they are, therefore, promising candidates for a variety of organic electronics applications. In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.