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Here, a current-accelerated phase cycling by an in situ current-induced oxidation process was demonstrated to reversibly switch the local metallic Cu and semiconducting Cu2O phases of patterned polycrystalline copper nanobelts. Once the Cu nanobelts were applied by a direct-current bias of ∼0.5 to 1 V in air with opposite polarities, the resistance between several hundred ohms and more than MΩ can be manipulated. In practice, the thickness of 60 nm with a moderate grain size inhibiting both electromigration and permanent oxidation is the optimized condition for reversible switching when the oxygen supply is sufficient. More than 40% of the copper localized beneath the positively biased electrode was oxidized assisted by the Joule heating, blocking the current flow. On the contrary, the reduction reaction of Cu2O was activated by the thermally assisted electromigration of Cu atoms penetrating the interlayer at the reverse bias. Finally, based on a high on/off ratio, the fast switching and the scalable production, reusable feasibility based on copper nanobelts such as the memristor array was demonstrated.

To achieve diffraction-limited focal spot size is a goal for next-generation synchrotrons. Mirrors are increasingly important for X-ray focusing optics following recent advances in mirror fabricati...

Three-dimensional functional silver electrode on silicon with trench-like optical structure realizes both broadband light harvesting and spontaneous oxidation reaction in 1M sodium chloride solution through the silver chloride examined during hydrogen preparation. Standard electrode potential (Eo) of -0.23 V in complete electrochemical reaction benefits hydrogen preparation without external bias. Proposed no power consumption solar harvester achieves 10 to 100 times the photoresponsivity and broader solar harvesting of previous studies providing open-circuit voltage of 0.35 V under one sun (100 mW/cm2) illumination to accelerate the electrochemical reaction additionally. Actual demonstration of hydrogen preparation just relying on outdoor solar confirms suggested strategy.

Time-resolved X-ray excited optical luminescence (TR-XEOL) was developed successfully for the 23A X-ray nanoprobe beamline located at the Taiwan Photon Source (TPS). The advantages of the TR-XEOL facility include (i) a nano-focused X-ray beam (

The multifunctional hard X-ray nanoprobe at Taiwan Photon Source (TPS) exhibits the excellent ability to simultaneously characterize the X-ray absorption, X-ray excited optical luminescence (XEOL) as well as the dynamics of XEOL of materials. Combining the scanning electron microscope (SEM) into the TPS 23A end-station, we can easily and quickly measure the optical properties to map out the morphology of a ZnO microrod. A special phenomenon has been observed that the oscillations in the XEOL associated with the confinement of the optical photons in the single ZnO microrod shows dramatical increase while the X-ray excitation energy is set across the Zn K-edge. Besides having the nano-scale spatial resolution, the synchrotron source also gives a good temporal domain measurement to investigate the luminescence dynamic process. The decay lifetimes of different emission wavelengths and can be simultaneously obtained from the streak image. Besides, SEM can provide the cathodoluminescence (CL) to be a complementary method to analyze the emission properties of materials, we anticipate that the X-ray nanoprobe will open new avenues with great characterization ability for developing nano/microsized optoelectronic devices.

Polarization-dependent hard X-ray excited optical luminescence (XEOL) was used to study not only the optical properties but also the crystallographic orientations of a non-polar a-plane ZnO wafer. In addition to a positive-edge jump and extra oscillations in the near-band-edge (NBE) XEOL yield, we observed a blue shift of the NBE emission peak that follows the polarization-dependent X-ray absorption near-edge structure (XANES) as the X-ray energy is tuned across the Zn K-edge. This NBE blue shift is caused by the larger X-ray absorption, generating higher free carriers to reduce the exciton-LO phonon coupling, which causes a decrease in the exciton activation energy. The extra oscillations in XANES and XEOL as the polarization is set parallel to the c-axis is attributed to simultaneous excitations of the Zn 4p - O 2pπ -bond along the c-axis and the bilayer σ-bond, whereas only the σ-bond is excited when the polarization is perpendicular to the c-axis. The polarization-dependent XEOL spectra can be used to determine the crystallographic orientations.

The diffraction-limited Montel mirrors, equipped at the X-ray Nanoprobe (XNP) at Taiwan Photon Source (TPS), provide a 40 nm focal spot and working distance 55 mm under the total beamline length of 69 m. The underneath holder supporting for the Montel mirrors is a 12 axes flexure based manipulators in which 10 out of the 12 axes are motorized. To monitor the position and stability of individual holder motion, a monitoring system consisted of three optical encoders and three- axes laser interferometers for angle movement is implemented. The gap width between the two mirrors and their orthogonality can be adjusted by a tilting sensor and a high magnification optical microscope. The focusing properties, phase and amplitude, after the Montel mirrors will be investigated by means of coherent Ptychography, as well as by zone plate imaging. An SEM in close cooperation with laser interferometers is equipped to precisely position the samples and conduct the on-the-fly scan. A high speed FPGA based circuit is developed to address signal from XRF, XAS, XEOL and XRD. Data is in tag with position and time information and been processed by computers to allow 5nm precision stage scanning free from mechanical feedback. The XNP at TPS is under commissioning since February 2017. The commissioning result, particularly the performance of the Montel mirrors will be reported in this presentation.

This on-the-fly scanning control system is for the x-ray nanoprobe endstation at Taiwan Photon Source(TPS) and built base-on the high speed Hardware (H/W), high throughput data stream and multi-channel control interfaces. The main idea is to tag each data with information of time and position, which generates by circuit and laser interferometer. The data is then processed by a computer to be analyzed and visualized. By using high speed FPGA with embedded processer to process the input and output data which includes the DAC, ADC, Gigabit Ethernet (GbE), X-ray fluorescence (XRF) and laser interferometer control interfaces. Three DAC control the X,Y and Z axes of the flexure stage, four ADCs and sensor interfaces gather the data and packet it into data packet. GbE send data back to computer to do image processing then reconstruct the scanning image. The numerous data not only for rebuild the image but also good for information analysis. Including the vibration, time slide analysis. Our demo system is built by an e-beam source, flexure stage and laser interferometer. The current maximum scanning speed is up to 5 lines/sec which is limited by the mechanical, the sample rate can be as high as 20M samples/sec which limited by laser interferometer, and the maximum data rate is close to 100M bytes/sec which is limited by the GbE. Interferometer information combine with position data in data packet, makes easy for data analysis and also for image stitching. The system is going to commission on beamline at March, 2017. The commission result for this system will be presented.

[*] Dr. K. H. Chen, M. H. Wu, W. C. Chen Institute of Atomic and Molecular Sciences, Academia Sinica No. 1, Sec. 4, Roosevelt Rd., Taipei 106 (Taiwan) E-mail: chenkh@pub.iams.sinica.edu.tw Dr. L. C. Chen, Dr. C. H. Chen, Dr. K. H. Chen Center for Condensed Matter Sciences, National Taiwan University No. 1, Sec. 4, Roosevelt Rd., Taipei 106 (Taiwan) E-mail: chenlc@ntu.edu.tw C. H. Lin, Prof. J. H. Lee Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University No. 1, Sec. 4, Roosevelt Rd., Taipei 106 (Taiwan)

The hard X-ray nanoprobe facility at Taiwan Photon Source (TPS) provides versatile X-ray analysis techniques, with tens of nanometer resolution, including XRF, XAS, XEOL, projection microscope, CDI, etc. Resulting from the large numerical aperture obtained by utilizing Montel KB mirrors, the beamline with a moderate length 75 meters can conduct similar performance with those beamlines longer than 100 meters. The two silica-made Montel mirrors are 45 degree cut and placed in a V-shape to eliminate the gap loss and the deformation caused by gravity. The slope error of the KB mirror pair is less than 0.04 µrad accomplished by elastic emission machining (EEM) method. For the beamline, a horizontal DCM and two-stage focusing in horizontal direction is applied. For the endstation, a combination of SEM for quickly positioning the sample, a fly scanning system with laser interferometers, a precise temperature control system, and a load lock transfer system will be implemented. In this presentation, the design and...

The hard X-ray nanoprobe facility at Taiwan Photon Source (TPS) provides multimodal X-ray detections, including XRF, XAS, XEOL, projection microscope, CDI, etc. Resulting from the large numerical aperture obtained by utilizing nested Montel mirrors, the beamline with a moderate length 75 meters can conduct similar performance with those beamlines longer than 100 meters. The mirrors are symmetrically placed with a 45 degrees cut. The beamline optics is thus designed to take the advantage of the symmetry of mirrors such that a round focal spot is accomplished. The size and the divergence of the focus spot are simulated around 40 nm and 6.29 mrad, respectively. The whole facility including the beamline and the stations will be operated under vacuum to preserve the photon coherence as well as to prevent the system from unnecessary environmental interference. A SEM in close cooperation with laser interferometers is equipped to precisely locate the position of the sample. This endstation is scheduled to be commissioned in the fall of 2016.

The hard X-ray nanoprobe at Taiwan Photon Source (TPS) makes use of the large numerical aperture obtained by nested Montel mirrors. To fully uptake the focusing power and flux, these mirrors requires the surface slope error no less than 0.05 μrad and are symmetrically placed with a 45 degrees cut for perfect surface matching. The beamline optics is designed to take the advantage of the symmetry of mirrors such that a round focal spot is accomplished. The final size of the focus spot are simulated below 40 nm at 9-15 keV. The whole facility including the beamline and the stations will be operated under vacuum to preserve photon coherence as well as to prevent the system from unnecessary environmental interference. The station equips with multimodal x-ray probes, including XRF, XAS, XEOL, projection microscope, CDI, etc. A SEM in close cooperation with laser interferometers is equipped to precisely locate the position of the sample. The beamline and the station are scheduled to be in commissioning phase in 2016.

W demonstrate a technique for improving the conversion efficiency in conventional silicon (Si) solar cells by using surface plasmon resonance (SPR) effects to harvest incident light energy over metal finger electrodes. Although the light absorption region beneath the metal finger electrodes cannot generate photocurrent, in this study, we employ the extraordinary transmission phenomenon, due to SPR effects, to significantly enhance the degree of light harvesting below the metal electrodes and, thereby, improve the efficiency of the entire solar cell. Therefore, the negative effect of covering the absorption area with opaque metal finger electrodes can be minimized or eliminated completely by taking advantage of the SPR effect of the metal electrodes.

DC bias voltages are commonly employed in using capacitive micro-ultrasonic transducers (CMUT) for their signal/noise ratio and sensitivity improvements. On the other hand, deformations of CMUT membranes are usually limited by the applied biasing voltages. Bias effects for CMUTs are investigated and modeled in this research, whether the transducers are operating in their transmitting or receiving modes. As to model a multi-energetically coupled CMUT device, the DC bias voltage effects are first examined based upon conversion from electrical energetic domain into mechanical energetic domain. The bias is represented as mechanical impedance, which is integrated with a modified CMUT mechanical equivalent circuit model, and subsequently interfaced with an acoustic equivalent model. This innovative model is implemented to derive physical relations and transfer functions for CMUT transducers, when they work in transmitting or receiving modes through gas or fluid media.

In this study, we used the autocloning effect on pyramid structures to develop broad-bandwidth, omnidirectional antireflection structures for silicon solar cells. The angular dependence of reflectance on several pyramid structures was systematically investigated. The deposition of three-layer autocloned films reduced the refractive index gap between air and silicon, resulting in an increase in the amount of transmitted light and a decrease in the total light escaping. The average reflectance decreased dramatically to ca. 2–3% at incident angles from 0 to 60° for both sub-wavelength– and micrometer–scale pyramid structures. The measured reflectance of the autocloned structure was less than 4% in the wavelength range from 400 to 1000 nm for incident angles from 0 to 60°. Therefore, the autocloning technique, combined with optical thin films and optical gradient structures, is a practical and compatible method for the fabrication of broad-bandwidth, omnidirectional antireflection structures on silicon solar cells.

By chiral-shape patterns over finger-type electrodes of conventional photodiode, for the first time, record high >80% external quantum efficiency (EQE) and polarization detection capability are successfully achieved simultaneously through the self-accumulated local electric field due to strong local surface plasmon resonance (LSPR). Device has expected high efficiency to absorb the incident visible energy profiting the visible applications potentially, such as artificial eyes. Extraordinary transmission phenomenon can be well examimed indepth by both theoretical and experimental results discussed in this work.

In this paper, we report a new optical data storage method: photomodification of hollow gold nanoparticle (HGN) monolayers induced by one-shot deep-ultraviolet (DUV) KrF laser recording. As far as we are aware, this study is the first to apply HGNs in optical data storage and also the first to use a recording light source for the metal nanoparticles (NPs) that is not a surface plasmon resonance (SPR) wavelength. The short wavelength of the recording DUV laser improved the optical resolution dramatically. We prepared HGNs exhibiting two absorbance regions: an SPR peak in the near-infrared (NIR) region and an intrinsic material extinction in the DUV region. A single pulse from a KrF laser heated the HGNs and transformed them from hollow structures to smaller solid spheres. This change in morphology for the HGNs was accompanied by a significant blue shift of the SPR peak. Employing this approach, we demonstrated its patterning ability with a resolving power of a half-micrometer (using a phase mask) and developed a readout method (using a blue-ray laser microscope). Moreover, we prepared large-area, uniform patterns of monolayer HGNs on various substrates (glass slides, silicon wafers, flexible plates). If this spectral recording technique could be applied onto thin flexible tapes, the recorded data density would increase significantly relative to that of current rigid discs (e.g., compact discs).

A new and general approach to achieving efficient electrically driven light emission from a Si-based nano p-n junction array is introduced. A wafer-scale array of p-type silicon nanotips were formed by a single-step self-masked dry etching process, which is compatible with current semiconductor technologies. On top of the silicon nanotip array, a layer of n-type ZnO film was grown by pulsed laser deposition. Both the narrow line width of 10 nm in cathodoluminescence spectra and the appearance of multiphonon Raman spectra up to the fourth order indicate the excellent quality of the ZnO film. The turn-on voltage of our ZnO/Si nanotip array is found to be approximately 2.4 V, which is 2 times smaller than its thin film counterpart. Moreover, electroluminescence (EL) from our ZnO/Si nanotips array light-emitting diode (LED) has been demonstrated. Our results could open up new possibilities to integrate silicon-based optoelectronic devices, such as highly efficient LEDs, with standard Si ultralarge-scale integrated technology.

The object of this research is to design and prototype a linear/rotary ultrasonic motor based upon multi-mode resonance behaviors for a piezoelectrically excited driver structure system. The whole ultrasonic motor system includes a pair of piezoactuator-equipped driver rods, a linear/rotary driven shaft, and a set of high-voltage power stages for energizing the piezoelectric stacks. The linear/rotary ultrasonic motor operating principle basically employs excited resonant modes of the driver structure as applying selected AC frequencies on the equipped piezostacks. Therefore, the prescribed combinational resonant modes of the driver structure result in the driven shaft operating in linear or rotary motions

This paper presents an application of system identification technique to tracking control of a piezoelectric system. An iterative scheme of identification and control design is introduced, and its corresponding application is described. Based on the estimated model of the system, a fine-tuning co-controller was built and adjusted in an iterative approach. The experiment results prove the excellence of this technique for delicate tracking control of the piezoelectric actuator.

An engine dynamic model is established in this research based upon theoretic approach and supplement of acquired engine experiment data using a dynamometer setup. Experiment data are employed to obtain relations among throttle valve opening, inject fuel amount, ignition timing, air/fuel ratio, engine speed and generated torque using curve-fitting techniques. Consequently, air intake and generated engine torque subsystem models are developed for simulations using MATLAB/SimuLink tool. Hence, the developed model could be excised to investigate steady state as well as transient performances of certain engines. The long-term object of this research is to prototype motorcycle engine fuel injection systems and to improve the control strategy for the engines developed in Taiwan.

In this study, we combined intruded nanocluster (INC)-based catalysts with ultrasound-assisted etching to obtain, within only a few seconds, wafer-scale nanostructures exhibiting excellent antireflective properties. We chose the INC catalysts because their high density of atomic-scale gold nanoclusters could be used to prepare highly dense silicon nanostalactite (SNS) structures, which can exhibit excellent antireflective properties even at relatively shallow etching depths. By applying ultrasonic oscillation during the etching process, gas bubbles were detached instantly and the exchange rate of the etching solution was improved significantly. Using this approach, we could prepare antireflective SNS structures with an average reflectance of approximately 2% over the range of 350 to 1000 nm within an etching time of 10 s. We also constructed INC-based SNS structures on the surfaces of micrometer-scale silicon pyramids to decrease the angular dependence of their surface reflection. These micro/nano hybrid structures effectively suppressed the average reflectance to 1.6% at normal incidence and to approximately 3.5% at an incident angle of 60°—excellent omnidirectional and broadband antireflective properties. Notably, such micro/nano hybrid structures could also be prepared within very short etching times.

In this paper we demonstrate a technique for improving the conversion efficiency in conventional silicon solar cells by using surface plasmon resonance (SPR) effects to harvest incident light energy over metal finger electrodes. According to three-dimensional finite-difference time-domain (3D-FDTD) analysis, incident light covering a broad bandwidth of the solar spectrum can be transmitted through metallic hole array structures. Although the light absorption region beneath the metal finger electrodes cannot generate a photocurrent, in this study, we employ the extraordinary transmission (EOT) phenomenon, due to SPR effects, to dramatically increase the degree of light harvesting below the metal electrodes and, thereby, improve the efficiency of the entire solar cell. Experimental data reveal that the excess photocurrent density was approximately 190% of the normal current density of a standard solar cell. Therefore, the negative effect of covering the absorption area with opaque metal finger electrodes can be minimized or eliminated completely by taking advantage of the SPR effect of the metal electrodes.

In this study we describe a low-cost cadmium sulfide (CdS) photoconductor that behaves as a highly sensitive and rapidly responding detector toward low-intensity light. Through the observation of TEM images and analysis of micro-Raman spectra, the degree of crystallization of CdS films increased and their dislocation defects were removed effectively after treatment with several shots from a KrF excimer laser. Such laser treatment of CdS photoconductors could be conducted in air and completed within a few seconds. At a very low bias voltage of 1 mV, the laser-treated CdS device provided a record high responsivity of 7200 A W−1 and a detectivity of 1015 Jones. In addition, at a normal bias voltage of 1 V, it displayed an extremely high responsivity of 7 × 106 A W−1 and a detectivity of 6 × 1016 Jones. The measured response time of the laser-annealed CdS device from the dark to illumination at 10−2 fW μm−2 was only 40 ms—much faster than the shutter speed or exposure time required for a professional digital camera for such low-light image detection. Accordingly, KrF laser annealing is a simple and rapid process that can significantly enhance the low-light detection properties of CdS, a commercial photoconductor. Our strategy proposed herein appears to hold great potential for ultralow-light image detection with ultralow power consumption.

In this paper we demonstrate an optical storage medium having advantages of ultrahigh contrast, superior stability, and broadband working wavelengths. Combining a single shot of deep-ultraviolet (UV) laser illumination with a Au particle-assisted etching process, we formed broadband antireflective, one-dimensional silicon nanowire arrays (SiNWs) with selectively at specific positions. Optical measurements and three-dimensional finite-difference time domain (3D-FDTD) simulations revealed ultrahigh reflection contrast between the Au and the SiNWs for both far- and near-field regimes. Relative to typical organic-based storage media, Au films and SiNWs are more stable, both chemically and thermally; therefore, we suspect that this new storage medium would exhibit high stability toward moisture, sunshine, and elevated temperatures.