1. High‐resolution FPGA‐pulse width modulation applied to PFC 2 MHz converter using eGaN field effect transistor
- Author
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José Augusto Arbugeri, Samir Ahmad Mussa, and Cesar Augusto Arbugeri
- Subjects
high-resolution FPGA-pulse width modulation ,III-V semiconductors ,Materials science ,field-programmable gate array ,Energy Engineering and Power Technology ,High resolution ,Gallium nitride ,02 engineering and technology ,Power factor ,GaN ,PFC converter ,chemistry.chemical_compound ,Gate array ,Hardware_INTEGRATEDCIRCUITS ,0202 electrical engineering, electronic engineering, information engineering ,Field-programmable gate array ,field programmable gate arrays ,power factor correction ,switching convertors ,wide band gap semiconductors ,business.industry ,EPC9003 development board ,half-bridge field effect transistor ,020208 electrical & electronic engineering ,General Engineering ,Wide-bandgap semiconductor ,bridge circuits ,single-phase power factor correction converter ,MAX10 FPGA ,frequency 2.0 MHz ,chemistry ,lcsh:TA1-2040 ,PWM power convertors ,field effect transistor circuits ,switch frequency ,on-board gate drives ,Optoelectronics ,Field-effect transistor ,gallium compounds ,lcsh:Engineering (General). Civil engineering (General) ,business ,Software ,Pulse-width modulation - Abstract
This study proposes an implementation based on a low-cost field-programmable gate array (FPGA) of a high-resolution pulse width modulation applied on a single-phase power factor correction (PFC) converter operating with 2 MHz switch frequency. The PFC was implemented using a half-bridge enhancement-mode Gallium Nitride (eGaN) field effect transistor with on-board gate drives (EPC9003 development board) and the MAX10 FPGA.
- Published
- 2019
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