1. Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering
- Author
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Felici, Marco, Birindelli, Simone, Trotta, Rinaldo, Francardi, Gerardino, Annamaria, Notargiacomo, Andrea, Rubini, Silvia, Martelli, Faustino, Capizzi, Mario, Polimeni, and Antonio
- Subjects
Brewster's angle ,Materials science ,Dopant ,business.industry ,General Physics and Astronomy ,Heterojunction ,BAND-GAP ,NITROGEN ,HYDROGEN ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,SINGLE QUANTUM-DOT ,Condensed Matter::Materials Science ,symbols.namesake ,Strain engineering ,Lattice constant ,Semiconductor ,symbols ,Optoelectronics ,Photonics ,Polarization (electrochemistry) ,business - Abstract
In dilute-nitride semiconductors, the possibility to selectively passivate N atoms by spatially controlled hydrogen irradiation allows for tailoring the effective N concentration of the host-and, therefore, its electronic and structural properties-with a precision of a few nanometers. In the present work, this technique is applied to the realization of ordered arrays of GaAs1-xNx/GaAs1-xNx: H wires oriented at different angles with respect to the crystallographic axes of the material. The creation of a strongly anisotropic strain field in the plane of the sample, due to the lattice expansion of the fully hydrogenated regions surrounding the GaAs1-xNx wires, is directly responsible for the peculiar polarization properties observed for the wire emission. Temperature-dependent polarization-resolved microphotoluminescence measurements, indeed, reveal a nontrivial dependence of the degree of linear polarization on the wire orientation, with maxima for wires parallel to the [110] and [1 (1) over bar0] directions and a pronounced minimum for wires oriented along the [100] axis. In addition, the polarization direction is found to be precisely perpendicular to the wire when the latter is oriented along high-symmetry crystal directions, whereas significant deviations from a perfect orthogonality are measured for all other wire orientations. These findings, which are well reproduced by a theoretical model based on finite-element calculations of the strain profile of our GaAs1-xNx/GaAs1-xNx:H heterostructures, demonstrate our ability to control the polarization properties of dilute-nitride micro- and nanostructures via H-assisted strain engineering. This additional degree of freedom may prove very useful in the design and optimization of innovative photonic structures relying on the integration of dilute-nitride-based light emitters with photonic crystal microcavities.
- Published
- 2014
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