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III-nitride quantum dot (QD) lasers have potential applications in visible light regime, yet one of its most important dynamic parameters, the linewidth enhancement factor (LEF), has been rarely studied. We studied the LEF of InGaN QD lasers with a comprehensive theory model and found that the LEF values of InGaN QD lasers can be smaller and more robust against inhomogeneous broadening than those of InGaAs QD lasers. In addition, the LEF improvement from quantum well to QD in III-nitride semiconductors is much larger than that in III-arsenide. It is believed that the large confinement energy in III-nitrides and atomic-like density of states of QDs contribute to these advantages of III-nitride QD lasers. Our results not only reveal the advantages of using III-nitride QD for high spectral purity, low-chirp laser applications, but also provide a general guideline for designing QD lasers with lower LEF values in various semiconductor materials.

On-chip lasers are a key component for the realization of silicon photonics. The performance of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native substrates. To drive forward design optimization we investigated the temperature and pressure dependence of intrinsic and modulation p-doped 1.3 μm InAs dot-in-well (DWELL) laser diodes on on-axis silicon substrates for comparison with devices on GaAs substrates. The silicon-based devices demonstrated low room temperature (RT) threshold current densities ( Jth ) of 192 Acm−2 (538 Acm−2) intrinsic (p-doped). Intrinsic devices exhibited temperature stable operation from 170–200 K. Above this, Jth increased more rapidly due to increased non-radiative recombination. P-doping increased the temperature at which Jth(T) started to increase to 300 K with a temperature insensitive region close to RT, but with a higher Jth . A strong correlation was found between the temperature dependence of gain spectrum broadening and the radiative component of threshold Jrad(T) . At low temperature this is consistent with strong inhomogeneous broadening of the carrier distribution, which is more pronounced in the p-doped devices. At higher temperatures Jth increases due to homogeneous thermal broadening coupled with non-radiative recombination. Hydrostatic pressure investigations indicate that while defect-related recombination dominates, radiative and Auger recombination also contribute to Jth .

We directly compare the performance of 1.55 $\mu \text{m}$ Fabry-Perot lasers using quantum well (QW) and quantum dash gain regions. Other than the gain medium the designs were identical, grown in the same growth system, and processed at the same time. The static laser performance (light-current and spectral) were similar for both gain materials but the intensity and phase noise characteristics of the dash based lasers were significantly better. This was attributed to the self mode-locking of the dash lasers that was not observed for the QW lasers. This reduction in noise allowed individual lasing lines from the Fabry-Perot dash lasers to be used for data transmission using high order modulation schemes, with quadrature phase-shift keying (QPSK) demonstrated at a symbol rate of 32GBaud. This performance could not be achieved using the equivalent QW based laser.

Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices. When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength, nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others. This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures. Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources. Here, we link the material and fundamental properties with the device physics. For this purpose, spectral linewidth, polarization anisotropy, optical nonlinearities as well as microwave, dynamic and nonlinear properties are closely examined. The paper focuses on photonic devices grown on native substrates (InP and GaAs) as well as those heterogeneously and epitaxially grown on silicon substrate. This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society., Quantum dot are one of the best practical examples of nanotechnologies. Owing to the discrete energy levels, quantum dot lasers output unique features like thermal stability, feedback insensitivity and spectral purity.

A self-assembled quantum dot (QD) gain medium has multiple favorable material properties over conventional quantum well (QW) structures and bulk materials, including a large tolerance for material defects, reduced reflection sensitivity, nearly zero linewidth enhancement factor, low transparency current density, high temperature operation, and ultrafast gain dynamics useful for semiconductor mode-locked lasers and amplifiers. Here, we review the recent advances in the field of QD lasers and amplifiers with a focus on the direct growth on silicon (Si). Si photonics has found widespread application, particularly for high volume applications and for co-integration with CMOS electronics.

Using quantum dot (QD) structures as active material for optoelectronics was already in focus before the development of quantum well (QW) lasers and before semiconductor lasers occupied an important place in the market. The big step in reducing laser threshold conditions by substituting bulk gain materials with QWs should find a logical continuation by further reducing the dimensionality toward full 3D carrier confinement by QDs. This was predicted by theoretical considerations at the beginning of the 1980s [1], [2]. However, no practical technologies were available at that time. Top-down approaches, as originally addressed, to produce nanoscale species on very large surfaces and interface areas resulted in the accumulation of a large defect density within the active region and the domination of nonradiative carrier recombination mechanisms. Only during the early 1990s was a major breakthrough achieved with the introduction of the bottom-up approach of strain-driven, self-organized epitaxial QD growth. The first lasers were obtained in the gallium arsenide (GaAs)-based material system [3].

In this article, a long-wave infrared InAs/GaAs sub-monolayer quantum dot quantum cascade photodetector (SML QD-QCD) grown on GaAs substrate is demonstrated. Temperature- and excitation-dependent photoluminescence measurements are used to study the optical properties of the quantum dot active region, which reveal energetically hybrid ground states between the InAs quantum dot and InGaAs quantum well due to the possible inter-mixing of In and Ga atoms during growth process. The device covers a spectral region from 6.5 to 9 μm. At 77 K, a peak responsivity of 7.5 mA/W is found at 8.3 μm (0 V) and a zero-bias differential-resistance-area ( R0A ) product of 9008 Ω·cm2 is obtained. The white noise-limited detectivity is 6.5 × 109 cm·Hz1/2/W. These results encourage the SML QD-QCD as a strong competitor for long-wave infrared imaging applications that require normal incidence and low power dissipation.

Semiconductor nanocrystals represent a promising class of solution-processable optical-gain media that can be manipulated via inexpensive, easily scalable colloidal techniques. Due to their extremely small sizes (typically

In this letter, we report the dynamics and performance of a 1.3- $\mu \text{m}$ InAs/GaAs directly modulated quantum-dot laser (QDL) under strong feedback. At a direct modulation speed of 10 Gbps, error-free back-to-back operation of the QDL under a feedback level of −12 dB was realized. Feedback-resistant fiber transmission over 20 km under a maximum optical feedback level of −9 dB was also demonstrated with a power penalty of less than 1 dB at a bit error ratio (BER) of 10−3. The performance of the QDL was compared with directly modulated quantum-well laser (QWL) with similar parameters, showing a clear advantage in feedback resistance of QDL.

A low phase noise millimeter-wave (MMW) signal generator is proposed and experimentally demonstrated with a C-band passively Fabry-Perot (F-P) quantum dot mode-locked laser. A novel method is proposed to generate low phase noise MMW signal, which is simply based on a commercial off-the-shelf dual-driven LiNbO3 Mach-Zehnder modulator and a passively F-P quantum dot mode-locked laser. MMW signal with the frequency of 30 GHz, 45 GHz and 90 GHz respectively is obtained experimentally. Single-sideband phase noise of the 30 GHz and 45 GHz MMW signal is −112 dBc/Hz and −106 dBc/Hz at an offset of 1 kHz, respectively. The linewidth of the 30 GHz and 45 GHz MMW signal is about from 225 Hz and 239 Hz. This is considered a very simple MMW generator with a quasi-tunable broadband and ultra-low phase noise.

In this work we provide numerical results concerning an all-optical inhibitory integrate and fire neuron based on a single section quantum-dot InAs/GaAs laser. The numerical model employs a detailed multi-population approach that accommodates electron-hole dynamics and can efficiently describe waveband transitions from both the ground and excited energy state. The underlying physical mechanism of waveband switching in an inhibitory neuron is unveiled and is attributed to hole-electron's transport time asymmetries. A detailed dynamical analysis allowed the identification of suitable optical injection regimes so as to trigger highly sought neuro-computational behaviors such as rate encoding and neural spikes with picosecond temporal resolution.

In this work, we present an approach to modelling III-V lasers on silicon based on a travelling-wave rate equation model with sub-micrometer resolution. By allowing spatially resolved inclusion of individual dislocations along the laser cavity, our simulation results offer new insights into the physical mechanisms behind the characteristics of 980 nm In(Ga)As/GaAs quantum well (QW) and 1.3 mu quantum dot (QD) lasers grown on silicon. We identify two effects with particular importance for practical applications from studying the reduction of the local gain in carrier-depleted regions around dislocation locations and the resulting impact on threshold current increase and slope efficiency at high dislocation densities. First, a large minority carrier diffusion length is a key parameter inhibiting laser operation by enabling carrier migration into dislocations over larger areas, and secondly, increased gain in dislocation-free regions compensating for gain dips around dislocations may contribute to gain compression effects observed in directly modulated silicon-based QD lasers. We believe that this work is an important contribution in creating a better understanding of the processes limiting the capabilities of III-V lasers on silicon in order to explore suitable materials and designs for monolithic light sources for silicon photonics.

In this article, we report the demonstration of directly modulated grating-assisted microcylinder surface-emitting lasers (GAMSELs) with low threshold. Two second-order gratings are added onto the side and top of the microcylinder cavity to select a single mode with a radially polarized emission pattern and efficiently emit the mode vertically, respectively. Laser with cavity radius of 6.05 μm is demonstrated with continuous-wave lasing ranging from 1 °C to 50 °C. This radius is approaching the theoretically smallest radius for the microcylinder laser to work at O band. A low threshold of 3.6 mA at 15 °C is obtained for the GAMSEL laser. Single-mode lasing with side-mode suppression-ratio (SMSR) larger than 40 dB is also shown here. GAMSELs with different cavity radii are demonstrated as laser arrays. 3 dB direct modulation bandwidth of 12 and 14 GHz of GAMSELs with radius of about 8 and 10 μm are obtained, respectively. Besides, effects of the duty cycle of the top and side gratings, scattering losses of the cavity, gain peak of the epitaxial wafer and ion implantation are experimentally investigated.

Optical connectivity, which has been widely deployed in today's datacenters and high-performance computing (HPC) systems, is a disruptive technological revolution to the IT industry in the new Millennium. In our journey to debut an Exascale supercomputer, a completely new computing concept, called memory-driven computing, was innovated recently. This new computing architecture brings challenges and opportunities for novel optical interconnect solutions. Here, we first discuss our strategy to develop appropriate optical link solutions for different data traffic scenarios in memory-driven HPCs. Then, we present detailed review on recent work to demonstrate fully photonics-electronics-integrated single- and multi-wavelength directly modulated laser (DML) transmitters on silicon for the first time. Compact heterogeneous microring lasers and laser arrays were fabricated as photonic engines to work with a customized complementary metal-oxide semiconductor (CMOS) driver circuit. Microring lasers based on conventional quantum well and new quantum dot lasing medium were compared in the experiment. Thermal shunt and MOS capacitor structures were integrated into the lasers for effective thermal management and ultra low-energy tuning. It enables a controllable dense wavelength division multiplexing (DWDM) link architecture in an HPC environment. An equivalent microring laser circuit model was constructed to allow photonics-electronics co-simulation. Equalization functionality in the CMOS driver circuit proved to be critical to achieve up to 14 Gb/s direct modulation with 6 dB extinction ratio. Finally, the on-going and future work is discussed towards more robust, higher speed, and more energy efficient DML transmitters.

We measure the FM noise power spectral density of quantum-dot mode-locked lasers (QD-MLLs) and compare this to their measured linewidths as predictors of performance in a digital coherent system. We explain our observations in terms of the non-Lorentzian line shape of the source wherein linewidth is determined by the low frequency part of its FM noise. Investigation of system performance with simulations based on the measured phase sequences and back-to-back coherent transmission experiments show that QD-MLLs with linewidths of several megahertz can have comparable performance to that of a laser with only a few hundreds of kilohertz of Lorentzian linewidth, due to the non-white part of their FM noise. We show that spectral linewidths of lasers with similar spectral properties can underestimate their performance in coherent systems, regardless of the linewidth measurement technique used. We propose a “ Lorentzian-equivalent linewidth ” measure to characterize lasers with non-white FM noise and to estimate their impact in digital coherent optical systems. This measure is obtained from phase variations at frequencies higher than typical frequencies often used to characterize lasers with white FM noise and comparable to the system baud. The proposed measure is shown to be a better predictor of system performance than the measured linewidth, for lasers with non-white FM noise. The impact of non-white FM noise on the optimization of carrier phase recovery and system performance is also discussed.

This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechanisms responsible for the optical degradation. More specifically, the samples (i) exhibited a gradual increase in threshold current, well correlated with (ii) a decrease in sub-threshold emission, and (iii) a decrease in slope efficiency. These variations were found to be compatible with a diffusion process involving the propagation of defects toward the active region of the device and the subsequent decrease in injection efficiency. This hypothesis was also supported by the increase in the defect-related current conduction components exhibited by the electrical characteristics, and highlights the role of defects in the gradual degradation of InAs quantum dot laser diodes. Electroluminescence measurements were used to provide further insight in the degradation process.

Dynamics of a multimode quantum dot laser with polarization-rotated optical feedback is investigated in a wide range of bias current. The results reveal that the laser is more sensitive to optical feedback when the polarization of feedback beam is rotated a large angle from the original polarization, which is different from the results in DFB lasers. Anticorrelated fluctuations between orthogonal polarizations are observed in a certain range of selected polarizations. Accordingly, dynamics in the total power can be weaker than that in a selected polarization. The anticorrelated polarization dynamics may be related to different polarizations of longitudinal modes.

This paper reviews optical injection locking (OIL) of semiconductor lasers and its application in optical communications and signal processing. Despite complex OIL dynamics, we attempt to explain the operational principle and main features of the OIL in an intuitive way, aiming at a wide understanding of the OIL phenomenon and its associated techniques in the optic and photonic communities. We review and compare different control techniques that enable robust OIL in practical systems. The applications are reviewed with a focus on new developments in the past decade, under the categories of ‘High Speed Directly Modulated Lasers’ and ‘Optical Carrier Recovery’. Finally, we draw our vision for future research directions.

We report high-performance broad-area eight-layer InAs/GaAs quantum-dot lasers (QDLs) emitting at 1.3 μm in the pulse and continuous-wave (CW) operations. Operational characteristics of the fabricated QDLs, including the emission wavelength, output power, threshold-current density, differential quantum efficiency, and characteristic temperature, are investigated at different temperatures. For as-cleaved facets of 100 μm wide and 1 mm cavity-length device, an output power of 100 mW is achieved at 1 kHz with 5% duty cycle and 49 mW in the CW operation. The device exhibits a threshold-current density of 56 A/cm2 at room temperature in both the operating modes and increases to 71 and 80 A/cm2 the in the pulse and CW modes, respectively, at 343 K. Over a temperature range of 298K to 343 K, we calculate the threshold characteristic temperature of 166K and 119K and slope-efficiency characteristic temperature of 2061K and 408K in the pulse and CW modes, respectively. The laser exhibits differential quantum efficiency of 41% and 32% in the pulse and CW mode, respectively. We observed that the device exhibited negligible dependence over a temperature range of 298K to 343 K.

$p$ -type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are shown to enable continuous wave operation over 100°C, nearly complete insensitivity to optical feedback, and orders of magnitude improvement in device reliability relative to unintentionally doped active regions. Also described is a spectrally resolved analysis of the effect of p-modulation doping on the optical gain revealing anomalous behavior that explains the high characteristic temperatures commonly observed in literature for similar devices on native substrate.

Dual-state emission is a common and important phenomenon which takes place in semiconductor Quantum Dot Lasers at different temperature and operating conditions usually investigated from microscopic carrier interaction modeling or even rate-equations based approaches. In this study, we revisit the topic, but the investigation is here performed from a system identification perspective; we built black-box models based on artificial neural networks approach, using the Multilayer Perceptron, the Extreme Learning Machine and a hybrid Echo State Network - Extreme Learning Machine. As a case study, we focused on switch-on transient and its prediction. The study revealed the model was able to separate and to predict, from the solely total power, without using any QDL design parameters, the optical power around the ground state and first excited state lasing lines of InAs/InGaAs quantum dot laser. The error performance was low as a RMSE of 2.81 μW and MAPE of 0.50% with processing time (training and testing time) of 15.27 s, enabling the alternative model to be used in optical filtering instrumentation as low-resolution and low-cost filters for applications in which it is not economically viable to use a spectrum analyzer, which can be replaced by a simple optical power meter.

Quantum dot (QD) laser as a light source for silicon optical integration has attracted great research attention because of the strategic vision of optical interconnection. In this paper, the communication band InAs QD ridge waveguide lasers were fabricated on GaAs-on-insulator (GaAsOI) substrate by combining ion-slicing technique and molecular beam epitaxy (MBE) growth. On the foundation of optimizing surface treatment processes, the InAs/In0.13Ga0.87As/GaAs dot-in-well (DWELL) lasers monolithically grown on a GaAsOI substrate were realized under pulsed operation at 20 °C. The static device measurements reveal comparable performance in terms of threshold current density, slope efficiency and output power between the QD lasers on GaAsOI and GaAs substrates. This work shows great potential to fabricate highly integrated light source on Si for photonic integrated circuits.

Funding: This paper incorporates results obtained from the project, JPNP20017, commissioned by 474 the New Energy and Industrial Technology Development Organization (NEDO) in Japan. Here, we report on the design and performance of a silicon photonic micro-transceiver required to operate in 5G and 6G environments at high ambient temperatures above 105 °C. The four-channel “IOCore” micro-transceiver incorporates a 1310 nm quantum dot laser system and operates at a data rate of 25 Gbps and higher. The 5 × 5 mm micro-transceiver chip benefits from a multimode coupling interface for low-cost assembly and robust connectivity at high temperatures as well as an optical redundancy scheme, which increases reliability by over an order of magnitude. Publisher PDF

A semi-empirical model is compared with measurements to establish limiting factors in the performance of p-modulation doped InAs quantum dot (QD) lasers. Fitted absorption spectra allow identification of supposed factors and comparison of multiple samples isolates their origin, providing insights for future laser design.

III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot lasers can reasonably operate at the high dislocation densities generated by the III-V-on-Si heteroepitaxy, which induces high non-radiative carrier recombination rates. Here we propose a strategy based on a type-II band alignment to fabricate quantum well lasers highly tolerant to dislocations. A mid-IR GaInSb/InAs interband cascade laser grown on Si exhibits performances similar to those of its counterpart grown on the native GaSb substrate, in spite of a dislocation density in the 10 8 c m − 2 range. Over 3800 h of continuous-wave operation data have been collected, giving an extrapolated mean time to failure exceeding 312,000 h. This validates the proposed strategy and opens the way to new integrated laser development.

The realization of monolithic integration of a stable III–V laser on a standard silicon-on-insulator (SOI) substrate has been regarded as a challenging technology for silicon-based photonic integration circuits (PICs). Here, we successfully demonstrated the electrically pumped P-doped 1300 nm InAs/GaAs quantum dot (QD) laser epitaxially grown on {111}-faceted SOI hollow substrates. These III–V QD lasers, which are epitaxially grown on an SOI substrate, generally exhibit strong thermal accumulation due to the oxide layer underneath. By applying a double-side heat dissipation design, the maximum operation temperature of the SOI-based InAs/GaAs QD laser under a continuous-wave (CW) operation mode is ramped up to 35°C from 20°C. Moreover, the thermal profile simulation of three different structures has also been carried out to show the effectiveness of the top heat sink design in order to improve laser performance. An integrated thermal shunt design is proposed to improve heat dissipation without using the external top heat sink. The successful realization of room-temperature SOI-based InAs/GaAs QD lasers pave a viable way for integrating light sources in PICs.

We review results on the optical injection of dual state InAs quantum dot-based semiconductor lasers. The two states in question are the so-called ground state and first excited state of the laser. This ability to lase from two different energy states is unique amongst semiconductor lasers and in combination with the high, intrinsic relaxation oscillation damping of the material and the novel, inherent cascade like carrier relaxation process, endows optically injected dual state quantum dot lasers with many unique dynamical properties. Particular attention is paid to fast state switching, antiphase excitability, novel information processing techniques and optothermally induced neuronal phenomena. We compare and contrast some of the physical properties of the system with other optically injected two state devices such as vertical cavity surface emitting lasers and ring lasers. Finally, we offer an outlook on the use of quantum dot material in photonic integrated circuits.

We propose a multilayer silicon nitride (SiN) -on-silicon photonic integrated circuit (PIC) platform with a monolithic laser at the C-band. A tapered edge coupler and a meta-structure-based interlayer directional coupler in the platform were designed to realize low-loss broadband laser-to-chip 3D coupling with small footprint. The coupling length of the interlayer directional coupler and the gap between different SiN layers were optimized as 12.7 µm and 1.4 µm. We measured the 1-dB-drop optical operation bandwidth of greater than 76 nm and the coupling loss of 6.1 ± 0.1 dB at 1550 nm for the interlayer directional coupler. The hybrid integration was demonstrated as a proof of concept for monolithic integration of light sources. The butt-coupling loss of 3.7 ± 0.1 dB between an on-chip DFB laser and a SiN edge coupler at 1549.48 nm was achieved. This approach opens the possibility of employing monolithic laser in the silicon photonics platform.

With exponential growth in data traffic and limitations of Moore’s Law, electronic integrated circuits have reached a bottleneck period. Photonic Integrated Circuits (PICs) are seemed as candidate for solving the problem of data transmission. Moreover, robust laser sources are significant building block for PICs design. Here, we demonstrate several InAs/GaAs quantum dot microcavity lasers monolithically grown on planar on-axis Si (001) substrates, including microdisk cavity [1], 2D Photonic Crystal with L3 defects cavity [2], 1D Photonic Crystal nanobeam cavity, bandedge Photonic Crystal cavity, bound states in the continuum (BIC) cavity, etc.

For the first time, RIN reduction in gain-switched quantum dot laser is demonstrated with an optical beam illumination to the excited state. It is also found that pulses having a width of 27–29 ps with a high peak power are generated under the noise.

Regrown quantum-dot distributed feedback lasers on Si demonstrate record performance, with a threshold current of 10 mA, an intrinsic linewidth of 41.2 kHz, a side-mode suppression ratio of 57.5 dB, and a maximum power of 11.7 mW.

For the first time, with an optical beam illumination, gain-switched short pulses with a width of 25–40 ps with a high peak power are generated owing to excited state transitions, and the change in the laser parameters does not affect the output pulses strongly.

We demonstrate the superior emission properties of a red-emitting self-assembled quantum dot microsphere laser made from a blend of green and red bandgap CdS x Se 1-x / ZnS quantum dots. The addition of the higher bandgap material reduces self-absorption and improves the Q-factor.

International audience; How far can we go in shaping the luminescence of quantum emitters? It is well known that by using cavities or nano-antennas, one can beam their luminescence into well-controlled directions of space. Here, we push this control to a level of complexity usually achieved with laser radiation: we make an assembly of colloidal quantum dots spontaneously emit vector vortex beams, which are swirls of light combining a non-zero angular momentum and an inhomogeneous field structure. The key ingredient to obtain this result is to increase the spatial coherence of the emitted photons. To fulfill this condition, we design and use plasmonic holograms that also impart a non-zero orbital angular momentum and a radial polarization state to the beam.

International audience

Direct epitaxy of InP quantum dot (QD) lasers on silicon (Si) provides an on-chip red laser source for integrated Si photonics with different applications. Here, we demonstrate the first, to the best of our knowledge, InP QD lasers directly grown on (001) Si. Combining highly emissive InP QDs and a GaAs/Si template with low defect density, continuous-wave (CW) lasing of micro-disk lasers (MDLs) on Si is achieved at room temperature. The lowest threshold of MDLs on Si is ∼ 500 n W , without considering the micro-disk surface absorption efficiency of the pump power. The MDLs grown on the native GaAs substrate with the same growth and fabrication process are compared using statistical data analysis. Similar material characterization results and device performances on these two substrates further confirm the performance of QD lasers on Si. This demonstration paves the way for future realization of integrated photonic circuits with red and near-infrared (NIR) lasers on Si.

Quantum dots (QDs) are a revolution in the field of photoelectric and have a crucial potential for future applications as a color converter in micro/mini- LEDs. However, the reported QD converter efficiency (-20-40%) has not reached the level on par with that of the conventional phosphor color converters (~40-60%). In this study, we fabricate the QD nanowires (NWs) templated in the nanoporous anodic aluminum oxide (AAO) substrate using a combination of inkjet printing and vacuum-deposition. Owing to the light couple and waveguide effect of the nanopores cavity structure, we demonstrate a 1.25-fold enhancement in the luminous flux and a 2.04-fold increase in the photoluminescence (PL) intensity compared with the traditional QD planar converter. Furthermore, the stability test showed a 2.34 times improvement in lifetime resulting from the heat dissipation and moisture protection of the nanopores. The inkjet printing fabrication strategy combined with the nanostructure provides new insights for mass-produce high-quality QD NWs, which is promising for modern lighting applications in the micro/mini-lighting-emitting diodes (LEDs).

Dual-state emission is an phenomenon which takes place in Quantum Dot Lasers at different temperature and operating conditions. In this study, we investigate that issue from a nonlinear regression model based on Extreme Learning Machine, which revealed to be able to predict the spectrally resolved transient response of InAs/InGaAs quantum dot laser with error performance as low as 0.54%.

For the first time gain-switched short pulse generation with a width of 25-40 ps from excited state is demonstrated applying an external optical Gaussian beam to the excited state of InAs-InP-(113)B quantum dot laser.

We discuss the integration of quantum dashes (QDashes) into laser simulations using Crosslight Pics3D, outlining the approach for developing a model featuring asymmetrical active regions. The importance of including wetting layers to accurately represent carrier transport is investigated using results obtained for an InAs/InP QDash laser. While leakage current across the active region is unaffected by the absence of wetting layers, their presence enhances Auger recombination losses in the active region, leading to lower overall device efficiencies.

InAlGaAs/GaAs quantum dots (QDs) are grown by molecular beam epitaxy and subsequently characterized to achieve emission $\lt 1\ \mu$m. Growth parameters are optimized to grow a new generation of homogeneous quaternary QDs with a PL FWHM of $\sim 60\ \mathrm{meV}$ and a surface density of $\gt10^{10} \mathrm{~cm}^{-2}$.

Quantum cascade lasers (QCLs) facilitate compact optical frequency comb sources that operate in the mid-infrared and terahertz spectral regions, where many molecules have their fundamental absorption lines. Enhancing the optical bandwidth of these chip-sized lasers is of paramount importance to address their application in broadband high-precision spectroscopy. In this work, we provide a numerical and experimental investigation of the comb spectral width and show how it can be optimized to obtain its maximum value defined by the laser gain bandwidth. The interplay of nonoptimal values of the resonant Kerr nonlinearity and cavity dispersion can lead to significant narrowing of the comb spectrum and reveals the best approach for dispersion compensation. The implementation of high mirror losses is shown to be favorable and results in proliferation of the comb sidemodes. Ultimately, injection locking of QCLs by modulating the laser bias around the round trip frequency provides a stable external knob to control the frequency-modulated comb state and recover the maximum spectral width of the unlocked laser state.

Inversion boundaries (IBs) are charged planer defects that arise from the growth of polar III-V materials on non-polar Si (001) substrate. This paper demonstrates a novel technique to achieve all-MBE grown, IB-free GaAs on on-axis Si (001) substrates by employing periodic Si single-atomic-height steps to re-distribute the nucleation of IBs and promote IB self-annihilation in the subsequent GaAs growth. Furthermore, an electronically pumped quantum-dot (QD) laser has been demonstrated on this IB-free GaAs/Si platform with a maximum operating temperature of 120 °C. These results could be a significant step towards the monolithic integration of III-V materials and devices with mature CMOS technology.

We propose and numerically demonstrate a photonic microwave generation scheme based on the dynamic period-one oscillation of a solitary spin-polarized vertical-cavity surface-emitting laser (spin-VCSEL). The evolution of the oscillation amplitude, frequency, power, and linewidth of the generated microwave is systematically investigated by using two-dimensional maps. The results show that the generated microwave signals with a dominant linewidth of about 3 MHz have a broad tunable frequency (from several gigahertz to hundreds of gigahertz), which benefits from the birefringence-induced oscillation in spin-VCSELs. Moreover, with the help of optical feedback, the microwave linewidth can be effectively minimized ( ∼ 51 k H z ) by increasing the feedback strength and feedback delay time. Importantly, this Letter offers prospects for applications requiring a feasible and resource-efficient microwave source in microwave photonic fields.

We experimentally investigate the complex dynamics of a multi-mode quantum-dot semiconductor laser with time-delayed optical feedback. We examine a two-dimensional bifurcation diagram of the quantum-dot laser as a comprehensive dynamical map by changing the injection current and feedback strength. We found that the bifurcation diagram contains two different parameter regions of low-frequency fluctuations. The power-dropout dynamics of the low-frequency fluctuations are observed in the sub-GHz region, which is considerably faster than the conventional low-frequency fluctuations in the MHz region. Comparing the dynamics of quantum-dot laser with those of single- and multi-mode quantum-well semiconductor lasers reveals that the fast low-frequency fluctuation dynamics are unique characteristics of quantum-dot lasers with time-delayed optical feedback.

Spin-optoelectronics is a rapidly developing field with promises to provide extra functionalities in communication and spectroscopy via ultrafast polarization modulation [1] . We are addressing the question of spin memory in InAs/GaAs quantum dots (QD) which can serve as gain structures for vertical-external cavity lasers (VECSELs), whereas most previous investigations focused on monolithic VCSELs. VECSELs offer possibilities not only for power scaling but also for additional flexibility as polarization controlling elements can be introduced into the free space sections [2] , [3] . Moreover QDs extend the wavelength coverage of GaAs based materials to the 1300 nm telecomm band with long spin lifetimes having been reported [4] . However, previous investigations concentrated on low temperatures and/or charged/doped dots and we are not aware of results on structures at strong excitation for lasing at room temperature.

Similar to vertical-external-cavity surface-emitting lasers (VECSELs) [1] , MECSELs [2] are high beam quality light sources with typical M 2 values close to an ideal Gaussian beam. The difference is the absence of the mono-lithically integrated distributed Bragg reflector. Because of this, MECSELs have a better wavelength flexibility and the potential to provide a wide spectral coverage, achievable by the existing semiconductor material systems. An additional feature of the MECSEL is the double-side cooling [3] , which allows a more efficient thermal management of the laser active structure by the implementation of two transparent heat spreaders. Since the MECSEL is fully operating in transmission, it is possible to pump the laser active structure optically from both sides. This double-side pump approach as present in solid-state lasers, has been applied to 780 nm emitting MECSELs [4] . Also, lateral power scaling by increasing the pump and cavity mode size has been presented in 825 nm emitting MECSELs [5] . So far, MECSELs have been demonstrated and fully characterized with quantum wells in their active regions [6] - [8] .