1. Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting
- Author
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Ashvini Punde, Yogesh Hase, Pratibha Shinde, Ashish Waghmare, Vidhika Sharma, Bharat R. Bade, Shruthi Nair, Vidya Doiphode, Rahul Aher, Shruti Shah, Subhash Pandharkar, Sachin R. Rondiya, Swati Rahane, Priti Vairale, Mohit Prasad, and Sandesh Jadkar
- Subjects
Photocurrent ,Materials science ,business.industry ,Band gap ,Fermi level ,Sputter deposition ,Condensed Matter Physics ,symbols.namesake ,Depletion region ,Electrochemistry ,symbols ,Water splitting ,Optoelectronics ,General Materials Science ,Charge carrier ,Electrical and Electronic Engineering ,Thin film ,business - Abstract
Indium selenide (γ-In2Se3) films were prepared using RF magnetron sputtering. Influence of deposition time on structural, optical, morphological, and photoelectrochemical (PEC) performance was studied. Formation of γ-In2Se3 is confirmed by low angle XRD, Raman spectroscopy, and XPS analysis. Surface morphology investigated using FE-SEM shows that γ-In2Se3 films are uniform and have a dense grain structure, without cracks and holes. Optical properties show that γ-In2Se3films absorb mainly in the UV region, and the bandgap energy decreases from 2.81 to 2.27 eV as deposition duration increases. Conduction and valance band-edge potential values show that γ-In2Se3 films are suitable for photoelectrochemical hydrogen evolution. PEC activity of γ-In2Se3 photoanodes was evaluated using linear sweep voltammetry (LSV), and there was an increase in photocurrent density with deposition time. Electron impedance spectroscopy (EIS) analysis revealed that γ-In2Se3 photoanodes had high charge transfer resistance, and it decreases with deposition time, which leads to improved PEC performance. Investigation of Mott Schottky's (MS) results shows a shifting of flat band potential towards negative potential, suggesting movement of fermi level towards conduction band edge. Carrier density increases from 3.7 × 1019 cm−3 to 8.9 × 1020 cm−3 and depletion layer width of γ-In2Se3 photoanodes are found in the range of ~ 2.67–9.10 nm. The gradual increase in electron lifetime indicates a decrease in the recombination rate of photo-generated charge carriers. An increase in time-dependent photocurrent density reveals that γ-In2Se3 films have effective electron–hole separation. Our work demonstrates that γ-In2Se3 can be a probable candidate for PEC water splitting and opto-electronic applications.
- Published
- 2021
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