1. Light- and bias-induced structural variations in metal halide perovskites
- Author
-
Shujuan Huang, Jincheol Kim, Dohyung Kim, Jan Seidel, Da Seul Lee, Arman Mahboubi Soufiani, Anita Ho-Baillie, Jae Sung Yun, Martin A. Green, and Pankaj Sharma
- Subjects
0301 basic medicine ,Diffraction ,Materials science ,Science ,General Physics and Astronomy ,Halide ,02 engineering and technology ,Article ,General Biochemistry, Genetics and Molecular Biology ,law.invention ,03 medical and health sciences ,Scanning probe microscopy ,law ,Solar cell ,lcsh:Science ,Nanoscopic scale ,Perovskite (structure) ,Multidisciplinary ,integumentary system ,business.industry ,Photovoltaic system ,food and beverages ,General Chemistry ,021001 nanoscience & nanotechnology ,Hysteresis ,030104 developmental biology ,Optoelectronics ,lcsh:Q ,0210 nano-technology ,business - Abstract
Organic–inorganic metal halide perovskites have gained considerable attention for next-generation photovoltaic cells due to rapid improvement in power conversion efficiencies. However, fundamental understanding of underlying mechanisms related to light- and bias-induced effects at the nanoscale is still required. Here, structural variations of the perovskites induced by light and bias are systematically investigated using scanning probe microscopy techniques. We show that periodically striped ferroelastic domains, spacing between 40 to 350 nm, exist within grains and can be modulated significantly under illumination as well as by electric bias. Williamson-Hall analysis of X-ray diffraction results shows that strain disorder is induced by these applied external stimuli. We show evidence that the structural emergence of domains can provide transfer pathways for holes to a hole transport layer with positive bias. Our findings point to potential origins of I–V hysteresis in halide perovskite solar cells., Organic–inorganic metal halide perovskite solar cells have been under the spotlight but what happens in the working solar cell device at the nanoscale remains elusive. Here Kim et al. show that light and voltage bias can induce strain and structural variation which may cause J–V scan hysteresis.
- Published
- 2019