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ObjectivesCircular RNAs (circRNAs) have emerged as significant biological regulators. Herein, we aimed to elucidate the role of an unidentified circRNA (circPDE4B) that is reportedly downregulated in osteoarthritis (OA) tissues.MethodsThe effects of circPDE4B were explored in human and mouse chondrocytes in vitro. Specifically, RNA pull-down (RPD)-mass spectrometry analysis (MS), immunoprecipitation, glutathione-S-transferase (GST) pull-down, RNA immunoprecipitation and RPD assays were performed to verify the interactions between circPDE4B and the RIC8 guanine nucleotide exchange factor A (RIC8A)/midline 1 (MID1) complex. A mouse model of OA was also employed to confirm the role of circPDE4B in OA pathogenesis in vivo.ResultscircPDE4B regulates chondrocyte cell viability and extracellular matrix metabolism. Mechanistically, FUS RNA binding protein (FUS) was found to promote the splicing of circPDE4B, while downregulation of circPDE4B in OA is partially caused by upstream inhibition of FUS. Moreover, circPDE4B facilitates the association between RIC8A and MID1 by acting as a scaffold to promote RIC8A degradation through proteasomal degradation. Furthermore, ubiquitination of RIC8A at K415 abrogates RIC8A degradation. The circPDE4B–RIC8A axis was observed to play an important role in regulating downstream p38 mitogen-activated protein kinase (MAPK) signalling. Furthermore, delivery of a circPDE4B adeno-associated virus (AAV) abrogates the breakdown of cartilage matrix by medial meniscus destabilisation in mice, whereas a RIC8A AAV induces the opposite effect.ConclusionThis work highlights the function of the circPDE4B–RIC8A axis in OA joints, as well as its regulation of MAPK-p38, suggesting this axis as a potential therapeutic target for OA.

Highly efficient Cu(In,Ga)Se2 (CIGS) thin film solar cells are often fabricated with a double Ga grading along the thickness direction of the light absorber. In this work, through a progressive procedure of using time-dependent Ga and In deposition rates, it is manifested that how the detailed shape of the double Ga grading profile in terms of the depth of the V-shape, the width of the V-shape, and the spatial position of the minimum bandgap can be experimentally actively manipulated. Moreover, the effect of the aforementioned features of the Ga grading profile on the photo-generated current has been uncovered by the progressive improvement in the spectral response of the external quantum efficiency spectra. Within the effort of our optimization, a CIGS solar cell with a conversion efficiency of 20.3% is obtained, believed to be the best reported for CIGS solar cells without actively using alkali post deposition treatment technology. This work has provided a practical and operable route to actively control the Ga grading profile and turned the fabrication of high efficiency CIGS solar cell from an art to more a science.

This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD) solar cells by directly doping Si into InAs QDs during the QD growth. The devices which contain five stacked QDs in their i-regions were grown using molecular beam epitaxy. It is shown that using appropriate Si-doing, the open-circuit voltage of the device can be increased to 0.84 V. This is dramatically higher than the value of 0.67 V obtained in undoped device using the same structure. Moreover, the efficiency of corresponding device is improved from 11.3% to 17.0%. This improvement in efficiency is attributed to greatly reduced energy loss in the devices that results from the reduction of the defect density in the stacked InAs/GaAs QD layers due to the doping.

First-principles calculations were employed to investigate the effect of native defects and a hydrogen-related defect complex on ferromagnetism in an undoped ZnO semiconductor. The results show that the zinc vacancy (VZn) could lead to a moment of 1.73 μB in the undoped ZnO supercell, while the oxygen vacancy could not, but the formation energy of the zinc vacancy is much higher than that of the oxygen vacancy. When the hydrogen atom is doped in imperfect ZnO, the formation energy of VZn+HI sharply decreases, compared with that of VZn. Meanwhile, the VZn+HI defect complex can induce a 0.99(0.65) μB moment in the Zn15HIO16 supercell. Furthermore, the total energy of the ZnO supercell with two defect complexes for the ferromagnetic phase is lower than that for the antiferromagnetic phase, and the calculated results show that a strong magnetic coupling exists in the ferromagnetic phase. As an unintentionally doped element, H usually appears in ZnO prepared by many methods. So the ferromagnetism in the ZnO d0...

We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III-V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap.

We report the fabrication of intermediate-band solar cells (IBSCs) based on quantum dots (QDs), which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer. Compared with conventional GaAs single-junction solar cells, the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum (> 1330 nm), a higher short-circle current (about 53% increase) and a stronger radiation hardness. The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.