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The design, fabrication and testing of 1550 nm DFB lasers with monolithically integrated electroabsorption modulators are reported. System performance of butterfly-packaged devices in 10 Gbit/s NRZ transmission over standard single mode fibre (SMF) with 17 ps/nm/km dispersion is included. Among the results are l0 Gbit/s transmission without the aid of optical amplifiers up to the theoretical limit of 50 km and up to 150 km using one optical booster amplifier.

We have developed a new layer stack based on the integration of active and passive devices in InGaAsP/InP using an MOVPE re-growth technique. The high quality of the new stack is shown by the performance of an all-optical wavelength converter. The converted wavelength showed a static extinction ratio of 33 dB and a − 1.5 dB power penalty in 2.5 Gb/s BER measurements. No error floor was detected.

The sign of the strain in a multiquantum well (MQW) active layer of an InGaAs/InP laser determines whether lasing occurs from the electron–heavy hole transition or from the electron‐light hole transition. Lasing from the electron‐light hole transition is reported to provide a much better performance than predicted by theory. It is concluded that this gives the best device performance, providing a higher differential gain, a lower threshold current, a record low linewidth enhancement factor of 1.5, and a K factor of 0.22 ns, potentially allowing a 3 dB modulation bandwidth of 40 GHz.