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This study utilizes the Shockly equation and Fourier’s law with the optical, electrical and thermal properties of LEDs to predict the variation of the junction temperature with the injection current. It is shown that the relationship of the junction temperature with the injection current can be determined by the effective thermal conductivity, temperature coefficient of junction voltage, series resistance, integral constant (forward voltage at the initial forward current and junction temperature), ambient temperature and external quantum efficiency. The effective thermal conductivity, temperature coefficient of junction voltage, and series resistance are calculated from the material properties based on the structures of LEDs instead of measurements in this study. The junction temperature of AlGaInP/GaInP MQW red LED predicted from this study agrees with the available experimental data and the junction temperatures of GaInN UV LED and AlGaN UV LED calculated by this work are also consistent with these obtained from the emission peak shift method. The elevated temperatures of AlGaN and GaInN are larger than that of AlGaInP/GaInP MQW red LED due to the difference of the thermal conductivity for the LED substrate. This study also presents the effects of the parameters on the variation of the junction temperature with the injection current. The effective thermal conductivity and ambient temperature significantly affect the junction temperature of LEDs.

The objective of this study was to investigate the key genes and pathways associated with thyroid carcinoma. Based on the microarray data of GSE27155, we identified the differentially expressed genes (DEGs) between four types of thyroid carcinoma samples (papillary carcinoma (PTC), oncocytic carcinoma (OTC), follicular carcinoma (FTC) and anaplastic carcinoma (ATC)) and normal controls. With the obtained DEGs, we performed gene functional interaction (FI) network analysis. Then we conducted Venn diagram analysis to identify the intersection and specific DEGs of the four types of thyroid carcinomas. The intersections DEGs were performed by functional enrichment and transcription factor (TF) prediction analyses. These specific DEGs were performed by pathway enrichment analysis. There were respectively 323, 318, 118 and 1005 DEGs identified in PTC, OTC, FTC and ATC. Twelve sub-network modules were extracted based on gene FI network analysis and eight thyroid carcinoma-associated DEGs were involved in the network, such as TIMP1. Based on the Venn diagram analysis, 27 common DEGs were identified, such as HMGB3 which was regulated by TF of NKX3-1. There were 149 PTC-specific DEGs (like CLDN1), 160 OTC-specific DEGs, 94 FTC-specific DEGs (like PPARG), and 789 ATC-specific DEGs (like CDK1). They were enriched in some pathways, such as Cell cycle, Citrate cycle, and Oxidative phosphorylation. TIMP1, HMGB3, CLDN1, CDK1 and PPARG as well as pathways of Cell cycle, Citrate cycle, and Oxidative phosphorylation may play important roles in the progression of thyroid carcinoma.

This paper investigates the thermal characteristics of region surrounding laser welding keyhole. The thermal characteristics of region surrounding laser keyhole play an important role on the mechanical properties after welding. The welding keyhole produced by laser welding is assumed to be a paraboloid of revolution. The laser beam with Gaussian distribution of intensity irradiates on the keyhole. Considering the phase change at solid-liquid interface, this study utilized the finite difference method to numerically calculate the thermal fields in the solid and liquid region surrounding laser welding keyhole.

Preliminary error budgets for the pointing knowledge, control, and stability of the Space Interferometry Mission (SIM) spacecraft are constructed using the specifications of commercial off-the-shelf attitude determination sensors, attitude control actuators, and other spacecraft capabilities that have been demonstrated in past missions. Results obtained indicate that we can meet all the presently known spacecraft pointing requirements. A large number of derived requirements are generated from this study. Examples are specifications on attitude determination sensors, attitude control actuators, minimum settling time after a rest-to-rest spacecraft slew. Preliminary error budgets constructed in this study must be updated to reflect the changing spacecraft design and requirements.

A thin-film electroluminescent device (ELD) has been fabricated by incorporating multi-barrier layers into the ZnS:Mn phosphor using r.f. magnetron sputtering. The number (N) of intermediate barriers (≈ 10 nm) was found to have a large effect on the device performance. The improvement in crystallinity of the phosphor layer can be explained by the extra thermal-cycle annealing due to the different deposition temperatures for Y2O3 (50 °C) and ZnS:Mn (300 °C). As the number ofthe Y2O3 barrier layer increases from N = 0 to N = 3, the ELD shows a threefold increase in brightness and the threshold voltage decreases from 93.6 to 60.7 V. The result of Sawyer-Tower circuit measurement confirms that the transferred charge increases with the number of intermediate barriers. However, further increasing the intermediate barriers (N > 3) leads to a degraded ELD performance. The results are discussed in terms of the contributions of the crystallinity, interface state, electron tunneling, and field redistribution of active layer as the mechanisms responsible for the performance of ELD with the multi-barrier insulators structure.

Interactions between acoustic waves and optical modes both propagating along an optical fiber are reviewed for applications in tunable photonic sensory devices. Fiber design parameters in Brillouin scattering sensors, and acoustooptic tunable filters are discussed.

The Palomar Testbed Interferometer (PTI) is a long-baseline infrared interferometer located at Palomar Observatory, California. It was built as a testbed for interferometric techniques applicable to the Keck Interferometer. First fringes were obtained in July 1995. PTI implements a dual-star architecture, tracking two stars simultaneously for phase referencing and narrow-angle astrometry. The three fixed 40-cm apertures can be combined pair-wise to provide baselines to 110 m. The interferometer actively tracks the white-light fringe using an array detector at 2.2 um and active delay lines with a range of +/- 38 m. Laser metrology of the delay lines allows for servo control, and laser metrology of the complete optical path enables narrow-angle astrometric measurements. The instrument is highly automated, using a multiprocessing computer system for instrument control and sequencing., ApJ in Press (Jan 99) Fig 1 available from http://huey.jpl.nasa.gov/~bode/ptiPicture.html, revised duging copy edit

Gallium nitride/gallium oxide GaN/Ga2O3 nanowire metal-oxide-semiconductor field-effect-transistors are shown to operate at an average electron velocity of ∼1.24 × 107 cm/s and threshold-voltage roll-off of −0.2 V as the transistor gate length Lg reduced from 500 to 50 nm. Improvement of saturation current to 120 μA and unity current/power-gain cut-off frequency to 150/180 GHz is observed on Lg = 50 nm devices. Our study reveals the advantages of using (i) polarization-induced positive charges and high-k dielectric at the {11¯01¯}GaN/{002}Ga2O3 interface to provide carrier confinement and to shield the drain field, and (ii) polarization-induced negative charges at the (0001)GaN/sapphire interface to form a back-barrier to suppress leakage and improve the short-channel transport properties.

We investigate the transport properties of thin-film transistors using indium oxide (In2O3)/gallium oxide (Ga2O3) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to μFE = 51.3 cm2/Vs and ON/OFF current ratio to 108 due to combinatorial layer thickness modulation. With the Ga2O3 layer thickness ratio increase to R = 14.35%, these observations are accompanied with one-order-of-magnitude reduction in the transistor subthreshold swing to 0.38 V/decade and suggest a trap-limited conduction mechanism upon which the reduced scattering centers due to annihilation of subgap states improve the device electric characteristics without post-growth annealing.

The need for high dynamic range imaging is crucial in many astronomical fields, such as extra-solar planet direct detection, extra-galactic science and circumstellar imaging. Using a high quality coronograph, dynamic ranges of up to $10^{5}$ have been achieved. However the ultimate limitations of coronographs do not come from their optical performances, but from scattering due to imperfections in the optical surfaces of the collecting system. We propose to use a deformable mirror to correct these imperfections and decrease the scattering level in local regions called ``dark holes''. Using this technique will enable imaging of fields with dynamic ranges exceeding $10^8$. We show that the dark-hole algorithm results in a lower scattering level than simply minimizing the RMS figure error (maximum-strehl-ratio algorithm). The achievable scattering level inside the dark-hole region will depend on the number of mirror actuators, the surface quality of the telescope, the single-actuator influence function and the observing wavelength. We have simulated cases with a $37\times37$ deformable mirror using data from the {\it Hubble Space Telescope\/} optics without spherical aberrations and have demonstrated dark holes with rectangular and annular shapes. We also present a preliminary concept of a monolithic, fully integrated, high density deformable mirror which can be used for this type of space application., Comment: uucoded gz-compressed postscript file, 26 pages with included figures